Laser-induced above-band-gap transparency in GaAs.
We report the observation of large (approximately 40%) laser-induced above-band-gap transparency in GaAs at room temperature. The induced transparency is present only during the pulse width of the driving midinfrared laser pulses and its spectral shape is consistent with a laser-induced blueshift of the band edge. Our simulations based on the dynamic Franz-Keldysh effect reproduce the salient features of the experimental results, demonstrating, in particular, that the amount of the band edge shift is approximately given by the ponderomotive potential.
Srivastava
Ajit
A
Department of Electrical and Computer Engineering, Rice Quantum Institute, and Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, USA.
Srivastava
Rahul
R
Wang
Jigang
J
Kono
Junichiro
J