Tip-enhanced fluorescence microscopy at 10 nanometer resolution.
We demonstrate unambiguously that the field enhancement near the apex of a laser-illuminated silicon tip decays according to a power law that is moderated by a single parameter characterizing the tip sharpness. Oscillating the probe in intermittent contact with a semiconductor nanocrystal strongly modulates the fluorescence excitation rate, providing robust optical contrast and enabling excellent background rejection. Laterally encoded demodulation yields images with <10 nm spatial resolution, consistent with independent measurements of tip sharpness.
Gerton
Jordan M
JM
Department of Applied Physics, California Institute of Technology, MC 128-95, Pasadena, CA 91125, USA.
Wade
Lawrence A
LA
Lessard
Guillaume A
GA
Ma
Z
Z
Quake
Stephen R
SR
D007834:Lasers; D018625:Microscopy, Atomic Force / Q000379:methods; D008856:Microscopy, Fluorescence / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
D012825:Silicon