Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver.
A monolithically integrated bacteriorhodopsin-semiconductor phototransceiver is demonstrated for the first time to the authors' knowledge. In this novel biophotonic optical interconnect, the input photoexcitation is detected by bacteriorhodopsin (bR) that has been selectively deposited onto the gate of a GaAs-based field-effect transistor. The photovoltage developed across the bR is converted by the transistor into an amplified photocurrent, which drives an integrated light-emitting diode with a Ga0.37Al0.63As active region. Advantage is taken of the high-input impedance of the field-effect transistor, which matches the high internal resistance of bR. The input and output wavelengths are 594 and 655 nm, respectively. The transient response of the optoelectronic circuit to modulated input light has also been studied.
Shin
Jonghyun
J
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA.
Bhattacharya
Pallab
P
Xu
Jian
J
Váró
György
G
D017607:Aluminum Compounds; D000669:Amplifiers, Electronic; D001152:Arsenicals; D001436:Bacteriorhodopsins / Q000737:chemistry* / Q000502:physiology / Q000528:radiation effects*; D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods; D004307:Dose-Response Relationship, Radiation; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010777:Photochemistry / Q000295:instrumentation* / Q000379:methods; D018511:Systems Integration; D014173:Transistors, Electronic
D017607:Aluminum Compounds; D001152:Arsenicals; C043055:gallium arsenide; D001436:Bacteriorhodopsins; D005708:Gallium