Enhancement of ferroelectricity in strained BaTiO3 thin films.
Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.
Choi
K J
KJ
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
Biegalski
M
M
Li
Y L
YL
Sharan
A
A
Schubert
J
J
Uecker
R
R
Reiche
P
P
Chen
Y B
YB
Pan
X Q
XQ
Gopalan
V
V
Chen
L-Q
LQ
Schlom
D G
DG
Eom
C B
CB