title: Enhancement of ferroelectricity in strained BaTiO3 thin films.
abstract: Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.
authors.affiliation: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
authors.forename: K J
authors.initials: KJ
authors.lastname: Choi
authors.forename: M
authors.initials: M
authors.lastname: Biegalski
authors.forename: Y L
authors.initials: YL
authors.lastname: Li
authors.forename: A
authors.initials: A
authors.lastname: Sharan
authors.forename: J
authors.initials: J
authors.lastname: Schubert
authors.forename: R
authors.initials: R
authors.lastname: Uecker
authors.forename: P
authors.initials: P
authors.lastname: Reiche
authors.forename: Y B
authors.initials: YB
authors.lastname: Chen
authors.forename: X Q
authors.initials: XQ
authors.lastname: Pan
authors.forename: V
authors.initials: V
authors.lastname: Gopalan
authors.forename: L-Q
authors.initials: LQ
authors.lastname: Chen
authors.forename: D G
authors.initials: DG
authors.lastname: Schlom
authors.forename: C B
authors.initials: CB
authors.lastname: Eom