Microstructural analysis of the deformation range under nano-indentation in beta-SiC.
As a powerful tool to analyse microstructural evolution under irradiation and the interaction of moving dislocations with radiation-induced defects, a focused ion beam (FIB) method was applied to ion-irradiated SiC followed by the nano-indentation test. An FIB method has excellent capability to prepare thin foils from the area of interest with a high accuracy of location and wide flexibility in the sampling direction. These advantages are demonstrated in the application to Si ion-irradiated SiC by transmission electron microscope observation.
Kishimoto
Hirotatsu
H
Park
Kyeong-Hwan
KH
Kondo
Sosuke
S
Ozawa
Kazumi
K
Kohyama
Akira
A
D046529:Microscopy, Electron, Transmission; D011827:Radiation; D017655:Silicon Compounds; D013048:Specimen Handling / Q000379:methods*
D017655:Silicon Compounds