title: Numerical simulation of the anisotropic elastic field generated by a misfit dislocations along a NiSi2/Si/(001)GaAs heterotwin interface.
abstract: The purpose of this work is the numerical resolution, in the case of anisotropic elasticity, of the problem of a misfit dislocation located between an infinite substrate and two-layer composite. This case is obtained where the period of a network of misfit dislocations is taken as much greater than the thickness of the two foils. As a result, in the vicinity of the dislocation, the limiting boundary conditions will be close to those of Volterra translation dislocation. The elastic fields of displacement and stress are calculated for various orientations of the burger's vector, by inversion of a 30 x 30 computed matrix. Before this calculation, we tested the precision of the results of the program by comparing the interfacial relative displacement obtained from it with the results of the analytical expression describing this same displacement. The composite NiSi2/Si/(001)GaAs the subject of several investigations, is treated as an example.
authors.affiliation: Département de mécanique, Faculté des Sciences de l'Ingénieur, Université de Batna, Rue Chahid Boukhlouf Med ElHadi, CP 05000, Batna, Algeria. brio_ray@hotmail.com
authors.forename: Mourad
authors.initials: M
authors.lastname: Brioua
authors.forename: Rachid
authors.initials: R
authors.lastname: Benbouta
authors.forename: Salah
authors.initials: S
authors.lastname: Madani
authors.forename: Lahbib
authors.initials: L
authors.lastname: Adami