title: Microstructural analysis of the deformation range under nano-indentation in beta-SiC.
abstract: As a powerful tool to analyse microstructural evolution under irradiation and the interaction of moving dislocations with radiation-induced defects, a focused ion beam (FIB) method was applied to ion-irradiated SiC followed by the nano-indentation test. An FIB method has excellent capability to prepare thin foils from the area of interest with a high accuracy of location and wide flexibility in the sampling direction. These advantages are demonstrated in the application to Si ion-irradiated SiC by transmission electron microscope observation.
authors.forename: Hirotatsu
authors.initials: H
authors.lastname: Kishimoto
authors.forename: Kyeong-Hwan
authors.initials: KH
authors.lastname: Park
authors.forename: Sosuke
authors.initials: S
authors.lastname: Kondo
authors.forename: Kazumi
authors.initials: K
authors.lastname: Ozawa
authors.forename: Akira
authors.initials: A
authors.lastname: Kohyama
mesh_terms: D046529:Microscopy, Electron, Transmission; D011827:Radiation; D017655:Silicon Compounds; D013048:Specimen Handling / Q000379:methods*
chemical_list: D017655:Silicon Compounds