title: Behaviors of surfactant atoms on Si(001) surface.
abstract: The behaviors of surfactant atoms for thin film growth on the Si(001) surface formed by molecular beam epitaxy were observed. At first, heterointerfaces on Si/Ge and Ge/Si without surfactant effect were investigated and are discussed on the basis of thermodynamics of surfaces and surface diffusion. The mechanism of island formation as a later stage of Stranski-Krastanov growth mode is also discussed. Surfactant effects of Bi atoms on the heteroepitaxial structures were investigated experimentally. Behavior of Sb as a surfactant was also observed and compared with the results of Bi. Mechanisms for improvements in the abruptness at heterointerfaces of Si/Ge/Si as well as suppression of island formation are discussed. The formation of atomic-scale wires of Bi was observed. The structure of Bi wires at high temperatures is described.
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan. h.matsuhata@aist.go.jp
authors.forename: Hirofumi
authors.initials: H
authors.lastname: Matsuhata
authors.forename: Kunihiro
authors.initials: K
authors.lastname: Sakamoto
authors.forename: Kazushi
authors.initials: K
authors.lastname: Miki
mesh_terms: D003461:Crystallography; D046529:Microscopy, Electron, Transmission / Q000379:methods*; D008968:Molecular Conformation; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013501:Surface-Active Agents / Q000737:chemistry*
chemical_list: D013501:Surface-Active Agents; D012825:Silicon