New hetero silicon-carbon nanostructure formation mechanism.
We report the formation of silicon and carbon hetero-nanostructures in an inductively coupled plasma system by a simultaneous growth/etching mechanism. Multi-walled carbon nanotubes were grown during one, three and five hour depositions, while tapered silicon nanowires were progressively etched. The carbon and silicon nanostructures and the interfaces between them were studied by electron microscopies and micro Raman spectroscopies. The potential of this method for large-scale controlled production of nano heterostructures without the requirement of a common catalyst is explored.
Song
S P
SP
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, USA.
Crimp
M A
MA
Ayres
V M
VM
Collard
C J
CJ
Holloway
J P
JP
Brake
M L
ML
D002244:Carbon / Q000737:chemistry*; D002384:Catalysis; D004583:Electrons; D005898:Glass; D008422:Materials Testing; D008854:Microscopy, Electron; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures; D036103:Nanotechnology / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D013059:Spectrum Analysis, Raman / Q000379:methods; D013499:Surface Properties; D014961:X-Ray Diffraction
D002244:Carbon; D012825:Silicon