title: A study of the damage on FIB-prepared TEM samples of AlxGa1-xAs.
abstract: The damage produced by focused ion beam (FIB) milling on a TEM sample of AlGaAs crystals has been studied. The damage observed on the sidewall of an AlGaAs transmission electron microscopy (TEM) sample was an amorphous layer. The thickness of the amorphous layer linearly increased with an increase in FIB accelerating voltage from 5 to 30 kV. The thickness of the amorphous layer of Al(x)Ga(1-x)As was constant at 3 nm and was independent of the Al concentration x when the accelerating voltage was below 5 kV. The thickness of the amorphous layer of Al(x)Ga(1-x)As decreased with an increase in Al concentration x when the accelerating voltage was above 5 kV. FIB milling at 5 kV effectively minimizes the thickness of the amorphous layer and also provides flat sidewalls on multilayer samples of Al(x)Ga(1-x)As that are prepared for TEM and scanning electron microscopy (SEM).
authors.affiliation: Characterization Technology Group, Matsushita Technoresearch, Inc., Moriguchi, Osaka 570-8501, Japan. yabuuchi.yasufumi@jp.panasonic.com
authors.forename: Yasufumi
authors.initials: Y
authors.lastname: Yabuuchi
authors.forename: Sayoko
authors.initials: S
authors.lastname: Tametou
authors.forename: Tetsuyuki
authors.initials: T
authors.lastname: Okano
authors.forename: Sachiko
authors.initials: S
authors.lastname: Inazato
authors.forename: Shoji
authors.initials: S
authors.lastname: Sadayama
authors.forename: Yoh
authors.initials: Y
authors.lastname: Yamamoto
authors.forename: Koji
authors.initials: K
authors.lastname: Iwasaki
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Sugiyama
mesh_terms: D000535:Aluminum; D001151:Arsenic; D003460:Crystallization; D005708:Gallium; D046529:Microscopy, Electron, Transmission; D013048:Specimen Handling
chemical_list: D005708:Gallium; D000535:Aluminum; D001151:Arsenic