Post-thinning technique for a lifted-out membrane.
A novel technique for post-thinning of lifted-out membranes already mounted on a mesh was developed using a Ga(+) ion beam at an accelerating voltage of 5 kV. It was applied to the preparation of transmission electron microscopy specimens from a selected cell of a silicon dynamic random-access memory.
Sadayama
Shoji
S
SII NanoTechnology Inc., Sunto-gun, Shizuoka 410-1393, Japan. shouji.sadayama@sii.co.jp
Sugiyama
Yasuhiko
Y
Iwasaki
Koji
K
Yasaka
Anto
A
D005708:Gallium; D046529:Microscopy, Electron, Transmission; D012825:Silicon; D013048:Specimen Handling / Q000379:methods*
D005708:Gallium; D012825:Silicon