title: Post-thinning technique for a lifted-out membrane.
abstract: A novel technique for post-thinning of lifted-out membranes already mounted on a mesh was developed using a Ga(+) ion beam at an accelerating voltage of 5 kV. It was applied to the preparation of transmission electron microscopy specimens from a selected cell of a silicon dynamic random-access memory.
authors.affiliation: SII NanoTechnology Inc., Sunto-gun, Shizuoka 410-1393, Japan. shouji.sadayama@sii.co.jp
authors.forename: Shoji
authors.initials: S
authors.lastname: Sadayama
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Sugiyama
authors.forename: Koji
authors.initials: K
authors.lastname: Iwasaki
authors.forename: Anto
authors.initials: A
authors.lastname: Yasaka
mesh_terms: D005708:Gallium; D046529:Microscopy, Electron, Transmission; D012825:Silicon; D013048:Specimen Handling / Q000379:methods*
chemical_list: D005708:Gallium; D012825:Silicon