title: Voltage refinement by deficit HOLZ line geometry.
abstract: A method of refining electron beam voltage from deficit line intersections, using a quasi-kinematic scattering approximation, is described and applied to a silicon standard. It is shown that dynamical corrections are necessary for higher-index zone axes, such as 310 and 411, where a single deficit line associated with one dominant Bloch state is visible. This leads to a substantial difference in the refined voltage compared with that obtained from a purely kinematic approximation. Neglect of this dynamical correction term effectively invokes a systematic error that may lead to high precision but poor accuracy in higher-order Laue zone measurements of beam voltage or lattice parameters. Although relatively small, differences in the dynamical correction necessary for these two zones are confirmed experimentally for 100-300 keV electrons.
authors.affiliation: CSIRO Manufacturing and Infrastructure Technology, Private Bag 33, Clayton South MDC and School of Physics and Materials Engineering, Monash University, Clayton, Victoria 3169, Australia. chris.rossouw@csiro.au
authors.forename: Chris J
authors.initials: CJ
authors.lastname: Rossouw
authors.forename: Christian J
authors.initials: CJ
authors.lastname: Maunders
mesh_terms: D003198:Computer Simulation; D003461:Crystallography; D008432:Mathematical Computing; D008854:Microscopy, Electron / Q000379:methods*; D015394:Molecular Structure