title: 3D analysis of cracking behaviour under indentation in ion-irradiated beta-SiC.
abstract: To provide a microstructural basis for evaluating fracture toughness by an indentation test, a new method to analyse three-dimensional (3D) cracking behaviour in beta-SiC is developed. As an example, the effect of ion irradiation on crack propagation was studied. The sequential cutting-out of thinned sections by focused ion beam (FIB) processing around an indentation impression enabled the reconstruction of the 3D behaviour of cracking near the indentation impression. The FIB processing has an advantage in making finely polished thin sections for scanning electron microscopy (SEM)/transmission electron microscopy without damaging the structure near cracks. In the present work, the procedure of cross-sectioning and the results of crack propagation analysis in beta-SiC by SEM inspection are described.
authors.affiliation: Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan. kpark@iae.kyoto-u.ac.jp
authors.forename: Kyeong Hwan
authors.initials: KH
authors.lastname: Park
authors.forename: Hirotatsu
authors.initials: H
authors.lastname: Kishimoto
authors.forename: Akira
authors.initials: A
authors.lastname: Kohyama
mesh_terms: D002516:Ceramics; D019544:Equipment Failure Analysis; D007091:Image Processing, Computer-Assisted / Q000379:methods*; D008855:Microscopy, Electron, Scanning; D012825:Silicon
chemical_list: D012825:Silicon