title: Origin of Schottky barriers in gold contacts on GaAs110.
abstract: Gold contacts on n-type GaAs(110) have been investigated using scanning tunneling microscopy and spectroscopy in cross-sectional configuration. In spatially resolved current voltage spectroscopy the Schottky barrier potential is visible. We find signatures of delocalized gap states at the interface decaying into the semiconductor and observe a defect density at the interface below 3 x 10(13) cm(-2). Both findings support that the Fermi level pinning at the Au/GaAs(110) interface is dominated by metal-induced gap states.
authors.affiliation: IV. Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
authors.forename: T C G
authors.initials: TC
authors.lastname: Reusch
authors.forename: M
authors.initials: M
authors.lastname: Wenderoth
authors.forename: L
authors.initials: L
authors.lastname: Winking
authors.forename: N
authors.initials: N
authors.lastname: Quaas
authors.forename: R G
authors.initials: RG
authors.lastname: Ulbrich