title: Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction.
abstract: Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 microm2 device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2 x 10(5) A/cm2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.
authors.affiliation: Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan. dchiba@riec.tohoku.ac.jp
authors.forename: D
authors.initials: D
authors.lastname: Chiba
authors.forename: Y
authors.initials: Y
authors.lastname: Sato
authors.forename: T
authors.initials: T
authors.lastname: Kita
authors.forename: F
authors.initials: F
authors.lastname: Matsukura
authors.forename: H
authors.initials: H
authors.lastname: Ohno