title: Electrical resistance of a monatomic step on a crystal surface.
abstract: We have succeeded in measuring the resistance across a single atomic step through a monatomic-layer metal on a crystal surface, Si(111)(sqrt[3]xsqrt[3])-Ag, using three independent methods, which yielded consistent values of the resistance. Two of the methods were direct measurements with monolithic microscopic four-point probes and four-tip scanning tunneling microscope probes. The third method was the analysis of electron standing waves near step edges, combined with the Landauer formula for 2D conductors. The conductivity across a monatomic step was determined to be about 5 x 10(3) Omega(-1) m(-1). Electron transport across an atomic step is modeled as a tunneling process through an energy-barrier height approximately equal to the work function.
authors.affiliation: Department of Physics, School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
authors.forename: Iwao
authors.initials: I
authors.lastname: Matsuda
authors.forename: Masashi
authors.initials: M
authors.lastname: Ueno
authors.forename: Toru
authors.initials: T
authors.lastname: Hirahara
authors.forename: Rei
authors.initials: R
authors.lastname: Hobara
authors.forename: Harumo
authors.initials: H
authors.lastname: Morikawa
authors.forename: Canhua
authors.initials: C
authors.lastname: Liu
authors.forename: Shuji
authors.initials: S
authors.lastname: Hasegawa