The long-term stability of amorphous silicon flat panel imaging devices for dosimetry purposes.
This study was carried out to determine the stability of the response of amorphous silicon (a-Si)-flat panel imagers for dosimetry applications. Measurements of the imager's response under reference conditions were performed on a regular basis for four detectors of the same manufacturer. We found that the ambient temperature influenced the dark-field, while the gain of the imager signal was unaffected. Therefore, temperature fluctuations were corrected for by applying a "dynamic" darkfield correction. This correction method also removed the influence of a small, irreversible increase of the dark-field current, which was equal to 0.5% of the dynamic range of the imager per year and was probably caused by mild radiation damage to the a-Si array. By applying a dynamic dark-field correction, excellent stability of the response over the entire panel of all imagers of 0.5% (1 SD) was obtained over an observation period up to 23 months. However, two imagers had to be replaced after several months. For one imager, an image segment stopped functioning, while the image quality of the other imager degraded significantly. We conclude that the tested a-Si EPIDs have a very stable response and are therefore well suited for dosimetry. We recommend, however, applying quality assurance tests dedicated to both imaging and dosimetry.
Louwe
R J W
RJ
The Netherlands Cancer Institute/Antoni van Leeuwenhoek Hospital, Department of Radiotherapy, Amsterdam, The Netherlands.
McDermott
L N
LN
Sonke
J J
JJ
Tielenburg
R
R
Wendling
M
M
van Herk
M B
MB
Mijnheer
B J
BJ
D002138:Calibration; D004307:Dose-Response Relationship, Radiation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D011785:Quality Assurance, Health Care / Q000379:methods / Q000592:standards; D011874:Radiometry / Q000295:instrumentation* / Q000592:standards; D011879:Radiotherapy Dosage; D011880:Radiotherapy Planning, Computer-Assisted / Q000295:instrumentation* / Q000379:methods / Q000592:standards; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D012825:Silicon / Q000528:radiation effects*; D013696:Temperature
D012825:Silicon