Superconductivity in boron-doped diamond.
Superconductivity of boron-doped diamond, reported recently at T(c)=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond-stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high T(c), leading to very large electron-phonon matrix elements. The calculated coupling strength lambda approximately 0.5 leads to T(c) in the 5-10 K range and makes phonon coupling the likely mechanism. Higher doping should increase T(c) somewhat, but the effects of three dimensionality primarily on the density of states keep doped diamond from having a T(c) closer to that of MgB2.
Lee
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Department of Physics, University of California, Davis, CA 95616, USA.
Pickett
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