title: 4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror.
abstract: We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.
authors.affiliation: National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Jing-Liang
authors.initials: JL
authors.lastname: He
authors.forename: Ya-Xian
authors.initials: YX
authors.lastname: Fan
authors.forename: Juan
authors.initials: J
authors.lastname: Du
authors.forename: Yong-Gang
authors.initials: YG
authors.lastname: Wang
authors.forename: Sheng
authors.initials: S
authors.lastname: Liu
authors.forename: Hui-Tian
authors.initials: HT
authors.lastname: Wang
authors.forename: Lian-Han
authors.initials: LH
authors.lastname: Zhang
authors.forename: Yin
authors.initials: Y
authors.lastname: Hang