Anisotropy of the magnetoresistance in Gd5Si2Ge2.
The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.
Tang
H
H
Materials and Engineering Physics Program, Ames Laboratory, Iowa State University, Ames, IA 50011-3020, USA.
Pecharsky
V K
VK
Samolyuk
G D
GD
Zou
M
M
Gschneidner
K A
KA
Antropov
V P
VP
Schlagel
D L
DL
Lograsso
T A
TA