title: Anisotropy of the magnetoresistance in Gd5Si2Ge2.
abstract: The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.
authors.affiliation: Materials and Engineering Physics Program, Ames Laboratory, Iowa State University, Ames, IA 50011-3020, USA.
authors.forename: H
authors.initials: H
authors.lastname: Tang
authors.forename: V K
authors.initials: VK
authors.lastname: Pecharsky
authors.forename: G D
authors.initials: GD
authors.lastname: Samolyuk
authors.forename: M
authors.initials: M
authors.lastname: Zou
authors.forename: K A
authors.initials: KA
authors.lastname: Gschneidner
authors.forename: V P
authors.initials: VP
authors.lastname: Antropov
authors.forename: D L
authors.initials: DL
authors.lastname: Schlagel
authors.forename: T A
authors.initials: TA
authors.lastname: Lograsso