Some effects of electron channeling on electron energy loss spectroscopy.
As an electron beam (of order 100 keV) travels through a crystalline solid it can be channeled down a zone axis of the crystal to form a channeling peak centered on the atomic columns. The channeling peak can be similar in size to the outer atomic orbitals. Electron energy loss spectroscopy (EELS) measures the losses that the electron experiences as it passes through the solid yielding information about the unoccupied density of states in the solid. The interaction matrix element for this process typically produces dipole selection rules for small angle scattering. In this paper, a theoretical calculation of the EELS cross section in the presence of strong channeling is performed for the silicon L23 edge. The presence of channeling is found to alter both the intensity and selection rules for this EELS signal as a function of depth in the solid. At some depths in the specimen small but significant non-dipole transition components can be produced, which may influence measurements of the density of states in solids.
Kirkland
Earl J
EJ
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA. ejk14@cornell.edu
D000465:Algorithms; D004583:Electrons; D008854:Microscopy, Electron; D008962:Models, Theoretical; D012825:Silicon / Q000032:analysis; D046590:Spectroscopy, Electron Energy-Loss
D012825:Silicon