Ultrahigh-quality-factor silicon-on-insulator microring resonator.
The development of ultrahigh-quality-factor (Q) silicon-on-insulator (SOI) microring resonators based on silicon wire waveguides is presented. An analytical description is derived, illustrating that in addition to low propagation losses the critical coupling condition is essential for optimizing device characteristics. Propagation losses as low as 1.9 +/- 0.1 dB/cm in a curved waveguide with a bending radius of 20 microm and a Q factor as high as 139.000 +/- 6.000 are demonstrated. These are believed to be the highest values reported for a curved SOI waveguide device and for any directly structured semiconductor microring fabricated without additional melting-induced surface smoothing.
Niehusmann
Jan
J
Institut für Halbleitertechnik, Rheinisch-Westfälische Technische Hochschule Aachen, Sommerfeldstrasse 24, 52056 Aachen, Germany. niehusmann@iht.rwth-aachen.de
Vörckel
Andreas
A
Bolivar
Peter Haring
PH
Wahlbrink
Thorsten
T
Henschel
Wolfgang
W
Kurz
Heinrich
H