title: Dependence of the molecular aggregation state of octadecylsiloxane monolayers on preparation methods.
abstract: The molecular aggregation state of octadecylsiloxane monolayers on Si-wafer substrate surfaces prepared from octadecyltrimethoxysilane (OTMS) or octadecyltrichlorosilane (OTS) was investigated on the basis of grazing incidence X-ray diffraction (GIXD), Fourier transform infrared spectroscopy (FT-IR), contact angle measurement, field emission scanning electron microscopy (FE-SEM), and scanning force microscopy (SFM). The OTMS monolayer was prepared by using the chemical vapor adsorption (CVA) method, and the OTS monolayers, which were used as reference samples, were prepared either by chemisorption (OTS-S) or by the water-cast method (OTS-W). The GIXD, FT-IR, lateral force microscopic (LFM) measurements, and FE-SEM observation revealed that the alkyl chains in the OTMS monolayers prepared using the CVA method are in an amorphous state at room temperature. According to the LFM measurement, the transition temperature from the hexagonal crystalline phase to the amorphous phase was found to be ca. 333 K for the OTS-S monolayer prepared by the chemisorption method. However, the phase transition was not observed in the OTMS monolayer prepared by the CVA method. Also, the atomic force microscopic (AFM) observation and the contact angle measurement showed that the OTMS monolayer prepared by the CVA method has a uniform surface when compared to the OTS monolayers. These results indicated that organosilane compounds in the monolayer prepared by the CVA method were immobilized on the Si-wafer substrate surface in an amorphous state, which was quite different from the hexagonal crystalline state obtained by the chemisorption and water-cast methods.
authors.affiliation: Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan.
authors.forename: Tomoyuki
authors.initials: T
authors.lastname: Koga
authors.forename: Masamichi
authors.initials: M
authors.lastname: Morita
authors.forename: Hideomi
authors.initials: H
authors.lastname: Ishida
authors.forename: Hirohiko
authors.initials: H
authors.lastname: Yakabe
authors.forename: Sono
authors.initials: S
authors.lastname: Sasaki
authors.forename: Osami
authors.initials: O
authors.lastname: Sakata
authors.forename: Hideyuki
authors.initials: H
authors.lastname: Otsuka
authors.forename: Atsushi
authors.initials: A
authors.lastname: Takahara