title: Endotaxial silicide nanowires.
abstract: We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{111} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width of the islands increase with time in a fixed proportion that varies strongly with growth temperature, which shows that the nanowire shape is kinetically determined. It is expected that nanowires could form in many other overlayer/substrate systems via this mechanism.
authors.affiliation: Science and Engineering of Materials Program, Arizona State University, Tempe, Arizona 85287-1504, USA.
authors.forename: Zhian
authors.initials: Z
authors.lastname: He
authors.forename: David J
authors.initials: DJ
authors.lastname: Smith
authors.forename: P A
authors.initials: PA
authors.lastname: Bennett