title: Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack.
abstract: We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.
authors.affiliation: Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
authors.forename: C
authors.initials: C
authors.lastname: Rüster
authors.forename: C
authors.initials: C
authors.lastname: Gould
authors.forename: T
authors.initials: T
authors.lastname: Jungwirth
authors.forename: J
authors.initials: J
authors.lastname: Sinova
authors.forename: G M
authors.initials: GM
authors.lastname: Schott
authors.forename: R
authors.initials: R
authors.lastname: Giraud
authors.forename: K
authors.initials: K
authors.lastname: Brunner
authors.forename: G
authors.initials: G
authors.lastname: Schmidt
authors.forename: L W
authors.initials: LW
authors.lastname: Molenkamp