title: Ga-rich limit of surface reconstructions on GaAs(001): atomic structure of the (4 x 6) phase.
abstract: The Ga-rich reconstruction of the GaAs(001) surface has been studied. Using scanning tunneling microscopy (STM), we have found the existence of a well-ordered (4 x 6) reconstruction under extreme Ga-rich conditions. A structure model, consisting of subsurface Ga-Ga dimers and surface Ga-As dimers, is proposed for the (4 x 6) surface. This model is found to be energetically favorable at the Ga-rich limit and agrees well with our experimental data from STM and reflection high-energy electron diffraction.
authors.affiliation: National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan. OHTAKE.Akihiro@nims.go.jp
authors.forename: Akihiro
authors.initials: A
authors.lastname: Ohtake
authors.forename: Pavel
authors.initials: P
authors.lastname: Kocán
authors.forename: Kaori
authors.initials: K
authors.lastname: Seino
authors.forename: Wolf G
authors.initials: WG
authors.lastname: Schmidt
authors.forename: Nobuyuki
authors.initials: N
authors.lastname: Koguchi