Multiscaling in semiconductor nanowire growth.
The scaling behavior of diameter modulations in semiconductor nanowire growth was investigated. SiC nanowires with modulated diameter were grown via a self-organized process and examined by transmission electron microscopy. By calculating qth-order height-height correlation functions, we found multiaffinity.
Kohno
Hideo
H
Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan.
Yoshida
Hideto
H