Imaging of all dangling bonds and their potential on the Ge/Si105 surface by noncontact atomic force microscopy.
High-resolution noncontact atomic force microscope (AFM) images were successfully taken on the Ge105-(1 x 2) structure formed on the Si105 substrate and revealed all dangling bonds of the surface regardless of their electronic situation, surpassing scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. An atomically resolved electrostatic potential profile by a Kelvin-probe method with AFM shows potential variations among the dangling bond states, directly observing a charge transfer between them. These results clearly demonstrate that high-resolution noncontact AFM with a Kelvin-probe method is an ideal tool for analysis of atomic structures and electronic properties of surfaces.
Eguchi
T
T
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwa-no-ha, Kashiwa, 277-8581, Japan.
Fujikawa
Y
Y
Akiyama
K
K
An
T
T
Ono
M
M
Hashimoto
T
T
Morikawa
Y
Y
Terakura
K
K
Sakurai
T
T
Lagally
M G
MG
Hasegawa
Y
Y