title: Monte Carlo study of MOSFET dosemeter characteristics: dose dependence on photon energy, direction and dosemeter composition.
abstract: MOSFET dosemeters are emerging as a versatile tool in various medical physics and health physics dose measurements. It is an important but difficult task to understand their energy and directional dependences because of their unique features. This paper presents a study to characterise a MOSFET dosemeter using Monte Carlo simulation method. Monoenergetic photon beams ranging from 15 to 6 MeV were simulated to study the energy and angular dependences. The results were compared with published experimental data. The Monte Carlo model also provided insightful information on optimising the dosemeter design by examining how various regions of the dosemeter contributed to the dose. Detailed energy deposition processes were further analysed by tracking individual particles inside the dosemeter.
authors.affiliation: Nuclear Engineering and Engineering Physics Program, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.
authors.forename: Brian
authors.initials: B
authors.lastname: Wang
authors.forename: X George
authors.initials: XG
authors.lastname: Xu
authors.forename: Chan-Hyeong
authors.initials: CH
authors.lastname: Kim
mesh_terms: D004583:Electrons; D004867:Equipment Design / Q000379:methods*; D008962:Models, Theoretical; D009010:Monte Carlo Method; D017785:Photons; D011874:Radiometry / Q000295:instrumentation* / Q000379:methods; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity