title: Surface reactions of 1-propanethiol on GaAs(100).
abstract: The adsorption and decomposition pathways of 1-propanethiol on a Ga-rich GaAs(100) surface have been investigated using the techniques of temperature programmed desorption, X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (TOF-SIMS). 1-Propanethiol adsorbs dissociatively on a clean GaAs(100) surface to form propanethiolate and hydrogen. Further reactions of these species to form new products compete with the recombinative desorption of molecular propanethiol. The C-S bond scission in the propanethiolate results in the formation of propyl species and elemental sulfur. The generation of propene via beta-hydride elimination then follows. In addition, propane and hydrogen form via reductive elimination processes. A recombinative high-temperature propanethiol desorption state is also observed. XPS and TOF-SIMS analyses confirm the presence of sulfur on the GaAs(100) surface following thermal decomposition. This paper discusses the mechanisms by which these products form on the GaAs(100) surface.
authors.affiliation: Centre for Materials and Surface Science, La Trobe University, Melbourne, Victoria 3086, Australia.
authors.forename: Suzy
authors.initials: S
authors.lastname: Donev
authors.forename: Narelle
authors.initials: N
authors.lastname: Brack
authors.forename: Nathan J
authors.initials: NJ
authors.lastname: Paris
authors.forename: Paul J
authors.initials: PJ
authors.lastname: Pigram
authors.forename: Nagindar K
authors.initials: NK
authors.lastname: Singh
authors.forename: Brian F
authors.initials: BF
authors.lastname: Usher