Energy levels in self-assembled quantum arbitrarily shaped dots.
A model to determine the electronic structure of self-assembled quantum arbitrarily shaped dots is applied. This model is based principally on constant effective mass and constant potentials of the barrier and quantum dot material. An analysis of the different parameters of this model is done and compared with those which take into account the variation of confining potentials, bands, and effective masses due to strain. The results are compared with several spectra reported in literature. By considering the symmetry, the computational cost is reduced with respect to other methods in literature. In addition, this model is not limited by the geometry of the quantum dot.
Tablero
C
C
Instituto de Energía Solar, ETSI de Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain. ctablero@etsit.upm.es