title: Measurement of ionizing radiation using carbon nanotube field effect transistor.
abstract: Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.
authors.affiliation: Department of Chemistry, Stanford University, Stanford, CA 94305, USA.
authors.forename: Xiao-Wu
authors.initials: XW
authors.lastname: Tang
authors.forename: Yong
authors.initials: Y
authors.lastname: Yang
authors.forename: Woong
authors.initials: W
authors.lastname: Kim
authors.forename: Qian
authors.initials: Q
authors.lastname: Wang
authors.forename: Pengfei
authors.initials: P
authors.lastname: Qi
authors.forename: Hongjie
authors.initials: H
authors.lastname: Dai
authors.forename: Lei
authors.initials: L
authors.lastname: Xing
mesh_terms: D004583:Electrons; D018625:Microscopy, Atomic Force; D037742:Nanotubes, Carbon; D011839:Radiation, Ionizing; D011874:Radiometry / Q000379:methods*; D012680:Sensitivity and Specificity; D012822:Silicon Dioxide / Q000737:chemistry; D013997:Time Factors; D014173:Transistors, Electronic; D014965:X-Rays
chemical_list: D037742:Nanotubes, Carbon; D012822:Silicon Dioxide