Chemical optimization of self-assembled carbon nanotube transistors.
We present the improvement of carbon nanotube field effects transistors (CNTFETs) performances by chemical tuning of the nanotube/substrate and nanotube/electrode interfaces. Our work is based on a method of selective placement of individual single walled carbon nanotubes (SWNTs) by patterned aminosilane monolayer and its use for the fabrication of self-assembled nanotube transistors. This method brings a relevant solution to the problem of systematic connection of self-organized nanotubes. The aminosilane monolayer reactivity can be used to improve carrier injection and doping level of the SWNT. We show that the Schottky barrier height at the nanotube/metal interface can be diminished in a continuous fashion down to an almost ohmic contact through these chemical treatments. Moreover, sensitivity to 20 ppb of triethylamine is demonstrated for self-assembled CNTFETs, thus opening new prospects for gas sensors taking advantages of the chemical functionality of the aminosilane used for assembling the CNTFETs.
Auvray
Stéphane
S
Laboratoire d'Electronique Moléculaire, CEA-DSM, CEA Saclay, 91191 Gif-sur-Yvette, France.
Derycke
Vincent
V
Goffman
Marcelo
M
Filoramo
Arianna
A
Jost
Oliver
O
Bourgoin
Jean-Philippe
JP
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005021:Ethylamines / Q000032:analysis*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014159:Transducers; D014173:Transistors, Electronic
D005021:Ethylamines; D037742:Nanotubes, Carbon; C016162:triethylamine