Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.
Integration of semiconductor epitaxical nanostructures and nanocrystals into two classes of quantum structures, uncovered adsorbed nanocrystals or buried via epitaxical overgrowth, is successfully demonstrated through structural and optical studies. The combination InGaAs/GaAs epitaxical structures and InAs nanocrystals is employed as a vehicle with the functional aim of exploiting the well developed optoelectronic communication technology based on the former with the biochemical and biomedical applications for which the latter are well suited.
Madhukar
Anupam
A
Nanostructure Materials & Devices Laboratory, University of Southern California, Los Angeles, California 90089-0241, USA. Madhukar@usc.edu
Lu
Siyuan
S
Konkar
Atul
A
Zhang
Yi
Y
Ho
Max
M
Hughes
Steven M
SM
Alivisatos
A Paul
AP
D001152:Arsenicals / Q000032:analysis / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000032:analysis / Q000737:chemistry*; D007204:Indium / Q000032:analysis / Q000737:chemistry*; D046911:Macromolecular Substances / Q000032:analysis / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D055095:Optics and Photonics / Q000295:instrumentation*; D010316:Particle Size; D045663:Quantum Dots; D012666:Semiconductors; D018511:Systems Integration
D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide