title: Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal.
abstract: A series of copper(I) amidinates of the general type [(R'NC(R)NR'')Cu](2) (R' and R'' = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) are well-suited for atomic layer deposition (ALD) of copper metal films that are pure, highly conductive, conformal, and strongly adherent to substrates.
authors.affiliation: Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
authors.forename: Zhengwen
authors.initials: Z
authors.lastname: Li
authors.forename: Seán T
authors.initials: ST
authors.lastname: Barry
authors.forename: Roy G
authors.initials: RG
authors.lastname: Gordon