title: [Preparation of Ge/SiO2 nanometer-crystal doped glass and study of its photoluminescence property].
abstract: Ge/SiO2 nanometer-crystal doped glass was prepared through sol-gel method. The gel was synthesized through the hydrolysis of a complex solution of Si (OC2H5)4 and Ge(OC2H5)4. The product gel was then heated at 700 degrees C in H2. Ge crystals appeared after the heating-reducing process. X ray diffraction analysis showed that there were Ge cubic crystals formed in the gel glass. The photoluminescence spectroscopic analysis showed that the Ge/SiO2 fluorescence peaked at 576 nm with excitation wavelength of 494 nm. By using the Brus quantum confinement model, the fluorescence peak energy suggested that the mean size of Ge crystal was about 3 nm.
authors.affiliation: Nanjing Normal University, Analysis and Testing Center & Chemistry Department, Nanjing 210097, China.
authors.forename: Xiao-tian
authors.initials: XT
authors.lastname: Gu
authors.forename: Yu-ying
authors.initials: YY
authors.lastname: Feng
authors.forename: Tong-shun
authors.initials: TS
authors.lastname: Jin
authors.forename: Zhong-qing
authors.initials: ZQ
authors.lastname: Yu
mesh_terms: D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods; D031315:Geranium / Q000737:chemistry*; D005898:Glass / Q000737:chemistry; D008027:Light; D049449:Luminescence; D008422:Materials Testing / Q000379:methods; D049329:Nanostructures; D036103:Nanotechnology; D010777:Photochemistry; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012822:Silicon Dioxide