Measurement of ionizing radiation using carbon nanotube field effect transistor.
Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.
Tang
Xiao-Wu
XW
Department of Chemistry, Stanford University, Stanford, CA 94305, USA.
Yang
Yong
Y
Kim
Woong
W
Wang
Qian
Q
Qi
Pengfei
P
Dai
Hongjie
H
Xing
Lei
L
D004583:Electrons; D018625:Microscopy, Atomic Force; D037742:Nanotubes, Carbon; D011839:Radiation, Ionizing; D011874:Radiometry / Q000379:methods*; D012680:Sensitivity and Specificity; D012822:Silicon Dioxide / Q000737:chemistry; D013997:Time Factors; D014173:Transistors, Electronic; D014965:X-Rays
D037742:Nanotubes, Carbon; D012822:Silicon Dioxide