Roughening rates of strained-layer instabilities.
We study the evolution of the morphology of Si0.75Ge0.25 strained layers using a wide range of deposition times, 60<tau<2400 s, at 600 degrees C on laser textured substrates with miscuts theta<15 degrees off Si(001). Ripple-shaped morphologies form spontaneously on miscuts along the 110 directions. At the shortest deposition times, roughening is suppressed as predicted by a linear stability analysis that uses previously measured values for the mass transport rate on the surface. The measured time constant of the roughening is approximately 80 s, a factor of 4 larger than predicted by theory.
Watanabe
Fumiya
F
Department of Materials Science and Engineering and the Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA.
Cahill
David G
DG
Greene
J E
JE