title: Sub-20 nm short channel carbon nanotube transistors.
abstract: Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >10(6) are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degrees C form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 V.
authors.affiliation: Infineon Technologies AG, Corporate Research, 81730 Munich, Germany. robert.seidel@infineon.com
authors.forename: R V
authors.initials: RV
authors.lastname: Seidel
authors.forename: A P
authors.initials: AP
authors.lastname: Graham
authors.forename: J
authors.initials: J
authors.lastname: Kretz
authors.forename: B
authors.initials: B
authors.lastname: Rajasekharan
authors.forename: G S
authors.initials: GS
authors.lastname: Duesberg
authors.forename: M
authors.initials: M
authors.lastname: Liebau
authors.forename: E
authors.initials: E
authors.lastname: Unger
authors.forename: F
authors.initials: F
authors.lastname: Kreupl
authors.forename: W
authors.initials: W
authors.lastname: Hoenlein