Hydrogen-adsorption induced atomic rearrangement of a Pb monolayer on Si(111).
We have observed interesting H-atom adsorption induced atomic rearrangements of a Pb monolayer on the Si(111) with a scanning tunneling microscope. A hexagonal ringlike pattern is formed around the point defect. The interactions among nearby H-adsorbed defects can even produce interferencelike superstructures. Phase boundaries are found to either enhance or suppress the formation of the interference pattern. These phenomena are produced by an intricate interplay between electronic and atomic interactions as perturbed by the adsorbed hydrogen atoms.
Hwang
Ing-Shouh
IS
Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of China. ishwang@phys.sinica.edu.tw
Chang
Shih-Hsin
SH
Fang
Chung-Kai
CK
Chen
Lih-Juann
LJ
Tsong
Tien T
TT