title: High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.
abstract: Short channel ( approximately 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-kappa gate dielectrics (ALD HfO(2)) are obtained. For nanotubes with diameter approximately 1.6 nm and band gap approximately 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70 mV/decade, negligible ambipolar conduction, and high on/off ratios up to 10(6) at a bias voltage of 0.5 V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.
authors.affiliation: Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA.
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
authors.forename: Ryan
authors.initials: R
authors.lastname: Tu
authors.forename: Damon B
authors.initials: DB
authors.lastname: Farmer
authors.forename: Jing
authors.initials: J
authors.lastname: Guo
authors.forename: Roy G
authors.initials: RG
authors.lastname: Gordon
authors.forename: Hongjie
authors.initials: H
authors.lastname: Dai
mesh_terms: D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D011188:Potassium / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon; D011188:Potassium