title: Gate control of dynamic nuclear polarization in GaAs quantum wells.
abstract: Gate control of dynamic nuclear polarization under optical orientation is demonstrated in a Schottky-gated n-GaAs/AlGaAs (110) quantum well by time-resolved Kerr rotation measurements. Spin relaxation of electrons due to mechanisms other than the hyperfine interaction is effectively suppressed as the donor induced background electron density is reduced from metallic to insulating regimes. Subsequent accumulation of photoexcited electron spins dramatically enhances dynamic nuclear polarization at low magnetic field, allowing us to tune nuclear spin polarization by external gate voltages.
authors.affiliation: Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Sanada
authors.forename: S
authors.initials: S
authors.lastname: Matsuzaka
authors.forename: K
authors.initials: K
authors.lastname: Morita
authors.forename: C Y
authors.initials: CY
authors.lastname: Hu
authors.forename: Y
authors.initials: Y
authors.lastname: Ohno
authors.forename: H
authors.initials: H
authors.lastname: Ohno