title: Hydrogen-induced instability of the Ge(105) surface.
abstract: The structure and stability of the hydrogen-terminated (105) surface of Ge deposited on Si(105) substrates are investigated by scanning tunneling microscopy (STM). Investigations combining STM, electron energy loss spectroscopy, and theory reveal that Si incorporation into the surface Ge layer of hydrogen-terminated Ge/Si(105) drastically destabilizes the surface. The STM images obtained on this surface are well explained by the recently established rebonded-step structure model.
authors.affiliation: Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
authors.forename: Yasunori
authors.initials: Y
authors.lastname: Fujikawa
authors.forename: T
authors.initials: T
authors.lastname: Nagao
authors.forename: Y
authors.initials: Y
authors.lastname: Yamada-Takamura
authors.forename: T
authors.initials: T
authors.lastname: Sakurai
authors.forename: T
authors.initials: T
authors.lastname: Hashimoto
authors.forename: Y
authors.initials: Y
authors.lastname: Morikawa
authors.forename: K
authors.initials: K
authors.lastname: Terakura
authors.forename: M G
authors.initials: MG
authors.lastname: Lagally