[Three-dimensional microanalysis of arsenic impurity in silicon].
The three-dimensional distribution of arsenic impurity concentration on the silicon wafer surface is determinaed by means of synchrotron radiation X-ray microfluorescence (SRXRF) and total reflection X-ray fluorescence (TXRF) anslysis. The result of depth profile of As is checked with secondary ion mass spectrometry (SIMS) and the agreement is reasonably good.
Liu
Y
Y
Institute of High Energy Physis, Academia Sinica, 100080 Beijing.
Fan
Q
Q
Wu
Y
Y
Wei
C
C
Xiao
H
H