Generating an etch resistant "resist" layer from common solvents using scanning probe lithography in a fluid cell.
A novel scanning probe lithography scheme is introduced involving the field-induced deposition of etch resistant material generated from common organic solvents such as n-octane, toluene, ethyl alcohol, and dioxane in the tip/sample gap region of a liquid cell. An NH(4)F/H(2)O(2)/H(2)O etchant transfers these structures into 7 nm tall posts in a negative-tone fashion, indicating that an etch resistant, likely carbon-based material is produced by field-induced decomposition of the solvent. This is in sharp contrast to the positive tone images that result from a similar process involving water as the gap electrolyte followed by a similar fluorine-based etching.
Suez
Itai
I
Department of Chemistry, University of California, Berkeley, CA 94720-1460, USA.
Backer
Scott A
SA
Fréchet
Jean M J
JM
D004563:Electrochemistry / Q000379:methods*; D008567:Membranes, Artificial; D008846:Micromanipulation / Q000379:methods*; D018625:Microscopy, Atomic Force / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D012996:Solutions; D012997:Solvents / Q000737:chemistry*; D013499:Surface Properties
D008567:Membranes, Artificial; D012996:Solutions; D012997:Solvents