Sigma-pi molecular dielectric multilayers for low-voltage organic thin-film transistors.
Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (up to approximately 2,500 nF.cm(-2)), excellent insulating properties (leakage current densities as low as 10(-9) A.cm(-2)), and single-layer dielectric constant (k)of approximately 16. These 3D self-assembled multilayers enable organic thin-film transistor function at very low source-drain, gate, and threshold voltages (<1 V) and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.
Yoon
Myung-Han
MH
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA.
Facchetti
Antonio
A
Marks
Tobin J
TJ
D002616:Chemical Engineering / Q000379:methods; D025802:Electric Capacitance; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods*; D004867:Equipment Design; D036103:Nanotechnology / Q000379:methods*; D017646:Organosilicon Compounds / Q000737:chemistry*; D014173:Transistors, Electronic
D017646:Organosilicon Compounds