Electron-phonon interaction and transport in semiconducting carbon nanotubes.
We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight-binding model. The mobility is derived using a multiband Boltzmann treatment. At high fields, the dominant scattering is interband scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of approximately 70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.
Perebeinos
Vasili
V
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.
Tersoff
J
J
Avouris
Phaedon
P