Energy conversion efficiency in nanotube optoelectronics.
We present theoretical performance estimates for nanotube optoelectronic devices under bias. Current-voltage characteristics of illuminated nanotube p-n junctions are calculated using a self-consistent nonequilibrium Green's function approach. Energy conversion rates reaching tens of percent are predicted for incident photon energies near the band gap energy. In addition, the energy conversion rate increases as the diameter of the nanotube is reduced, even though the quantum efficiency shows little dependence on nanotube radius. These results indicate that the quantum efficiency is not a limiting factor for use of nanotubes in optoelectronics.
Stewart
Derek A
DA
Sandia National Laboratories, Livermore, CA 94551, USA. stewart@cnf.cornell.edu
Léonard
François
F
D003198:Computer Simulation; D004307:Dose-Response Relationship, Radiation; D004553:Electric Conductivity; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods*; D004581:Electronics; D004735:Energy Transfer; D008027:Light; D008956:Models, Chemical; D043942:Nanotubes / Q000737:chemistry* / Q000528:radiation effects*; D010777:Photochemistry / Q000295:instrumentation / Q000379:methods*; D011829:Radiation Dosage; D012666:Semiconductors