High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.
Short channel ( approximately 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-kappa gate dielectrics (ALD HfO(2)) are obtained. For nanotubes with diameter approximately 1.6 nm and band gap approximately 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70 mV/decade, negligible ambipolar conduction, and high on/off ratios up to 10(6) at a bias voltage of 0.5 V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.
Javey
Ali
A
Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA.
Tu
Ryan
R
Farmer
Damon B
DB
Guo
Jing
J
Gordon
Roy G
RG
Dai
Hongjie
H
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D011188:Potassium / Q000737:chemistry*; D014173:Transistors, Electronic
D037742:Nanotubes, Carbon; D011188:Potassium