title: Gate-dependent magnetoresistance phenomena in carbon nanotubes.
abstract: We report on the first experimental study of the magnetoresistance of double-walled carbon nanotubes under a magnetic field as large as 50 T. By varying the field orientation with respect to the tube axis, or by gate-mediated shifting the Fermi level position, evidence for unconventional magnetoresistance is presented and interpreted by means of theoretical calculations.
authors.affiliation: Laboratoire National des Champs Magnetiques Pulsés, UMR5147, 143 avenue de rangueil, 31342 Toulouse, France.
authors.forename: G
authors.initials: G
authors.lastname: Fedorov
authors.forename: B
authors.initials: B
authors.lastname: Lassagne
authors.forename: M
authors.initials: M
authors.lastname: Sagnes
authors.forename: B
authors.initials: B
authors.lastname: Raquet
authors.forename: J-M
authors.initials: JM
authors.lastname: Broto
authors.forename: F
authors.initials: F
authors.lastname: Triozon
authors.forename: S
authors.initials: S
authors.lastname: Roche
authors.forename: E
authors.initials: E
authors.lastname: Flahaut