title: InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-microm lasers.
abstract: A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan.
authors.forename: H C
authors.initials: HC
authors.lastname: Lai
authors.forename: A
authors.initials: A
authors.lastname: Li
authors.forename: K W
authors.initials: KW
authors.lastname: Su
authors.forename: M L
authors.initials: ML
authors.lastname: Ku
authors.forename: Y F
authors.initials: YF
authors.lastname: Chen
authors.forename: K F
authors.initials: KF
authors.lastname: Huang