Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner.
We have fabricated and characterized surface-emitting, spin-polarized light-emitting diodes with a Mn-doped InAs dilute magnetic quantum dot spin-injector and contact region grown by low-temperature molecular beam epitaxy, and an In(0.4)Ga(0.6)As quantum dot active region. Energy-dispersive X-ray and electron energy loss spectroscopies performed on individual dots indicate that the Mn atoms incorporate within the dots themselves. Circularly polarized light is observed up to 160 K with a maximum degree of circular polarization of 5.8% measured at 28 K, indicating high-temperature spin injection and device operation.
Chakrabarti
Subhananda
S
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA.
Holub
Michael A
MA
Bhattacharya
Pallab
P
Mishima
Tetsuya D
TD
Santos
Michael B
MB
Johnson
Matthew B
MB
Blom
Douglas A
DA
D016880:Anisotropy; D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D008280:Magnetics; D008345:Manganese / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D010316:Particle Size; D045663:Quantum Dots; D012666:Semiconductors; D013113:Spin Labels
D001152:Arsenicals; D013113:Spin Labels; D007204:Indium; D008345:Manganese; C076773:indium arsenide