Sub-20 nm short channel carbon nanotube transistors.
Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >10(6) are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degrees C form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 V.
Seidel
R V
RV
Infineon Technologies AG, Corporate Research, 81730 Munich, Germany. robert.seidel@infineon.com
Graham
A P
AP
Kretz
J
J
Rajasekharan
B
B
Duesberg
G S
GS
Liebau
M
M
Unger
E
E
Kreupl
F
F
Hoenlein
W
W