d-Electron-induced negative magnetoresistance of a pi-d interaction system based on a brominated-TTF donor.
A new pi-d interaction system (EDT-TTFBr2)2FeBr4 (EDT-TTFBr2 = 4,5-dibromo-4',5'-ethylenedithiotetrathiafulvalene) and its nonmagnetic anion analogue (EDT-TTFBr2)2GaBr4 based on a brominated TTF-type organic donor are investigated. The salts featured by quasi-1D pi-electronic systems are metallic with metal-insulator transitions taking place at about 20 and 70 K for the FeBr4- and GaBr4- salts, respectively, where the low-temperature insulating state is associated with charge ordering or a Mott insulator followed by an antiferromagnetic transition at lower temperatures. The FeBr4- salt is featured with an antiferromagnetic transition of the anion d spins at a Neel temperature (TN) = 11 K, which is significantly high despite its long anion-anion Br-Br contact, suggesting the importance of the pi-d interaction in the magnetism. The surprisingly strong pi-d interaction, ca. -22.3 K estimated from the magnetization curve, evidences the usefulness of the chemical modification of the donor molecule with bromine substitution to achieve strong intermolecular interaction. The antiferromagnetic state of the anion d spins affects the transport of the conducting pi electrons through the strong pi-d interaction, as evidenced by the presence of a resistivity anomaly of the FeBr4- salt at TN. Below TN, the FeBr4- salt shows negative magnetoresistance that reaches -23% at the highest magnetic field investigated (B=15 T), whereas only a small positive magnetoresistance is observed in the pi-electron-only GaBr4- salt. The mechanism of the negative magnetoresistance is explained by the stabilization of the insulating state of the pi electrons by the periodic magnetic potential of the anion d spins in the FeBr4- salt, which is modified by applying the external magnetic field.
Nishijo
Junichi
J
Department of Chemistry, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8551, Japan.
Miyazaki
Akira
A
Enoki
Toshiaki
T
Watanabe
Ryoji
R
Kuwatani
Yoshiyuki
Y
Iyoda
Masahiko
M