Gate-dependent magnetoresistance phenomena in carbon nanotubes.
We report on the first experimental study of the magnetoresistance of double-walled carbon nanotubes under a magnetic field as large as 50 T. By varying the field orientation with respect to the tube axis, or by gate-mediated shifting the Fermi level position, evidence for unconventional magnetoresistance is presented and interpreted by means of theoretical calculations.
Fedorov
G
G
Laboratoire National des Champs Magnetiques Pulsés, UMR5147, 143 avenue de rangueil, 31342 Toulouse, France.
Lassagne
B
B
Sagnes
M
M
Raquet
B
B
Broto
J-M
JM
Triozon
F
F
Roche
S
S
Flahaut
E
E