title: Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces.
abstract: Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, results in a field of 40-nm-wide Ge nanowires along [72 187] with a uniform period of 60 nm.
authors.affiliation: Frederick-Seitz Materials Research Laboratory and Department of Materials Science, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, USA. ohmori@mrl.uiuc.edu
authors.forename: Kenji
authors.initials: K
authors.lastname: Ohmori
authors.forename: Y L
authors.initials: YL
authors.lastname: Foo
authors.forename: Sukwon
authors.initials: S
authors.lastname: Hong
authors.forename: J G
authors.initials: JG
authors.lastname: Wen
authors.forename: J E
authors.initials: JE
authors.lastname: Greene
authors.forename: I
authors.initials: I
authors.lastname: Petrov
mesh_terms: D016880:Anisotropy; D003460:Crystallization / Q000379:methods*; D005857:Germanium / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D005857:Germanium; D012825:Silicon