title: Hydrogen-adsorption induced atomic rearrangement of a Pb monolayer on Si(111).
abstract: We have observed interesting H-atom adsorption induced atomic rearrangements of a Pb monolayer on the Si(111) with a scanning tunneling microscope. A hexagonal ringlike pattern is formed around the point defect. The interactions among nearby H-adsorbed defects can even produce interferencelike superstructures. Phase boundaries are found to either enhance or suppress the formation of the interference pattern. These phenomena are produced by an intricate interplay between electronic and atomic interactions as perturbed by the adsorbed hydrogen atoms.
authors.affiliation: Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of China. ishwang@phys.sinica.edu.tw
authors.forename: Ing-Shouh
authors.initials: IS
authors.lastname: Hwang
authors.forename: Shih-Hsin
authors.initials: SH
authors.lastname: Chang
authors.forename: Chung-Kai
authors.initials: CK
authors.lastname: Fang
authors.forename: Lih-Juann
authors.initials: LJ
authors.lastname: Chen
authors.forename: Tien T
authors.initials: TT
authors.lastname: Tsong