title: [Three-dimensional microanalysis of arsenic impurity in silicon].
abstract: The three-dimensional distribution of arsenic impurity concentration on the silicon wafer surface is determinaed by means of synchrotron radiation X-ray microfluorescence (SRXRF) and total reflection X-ray fluorescence (TXRF) anslysis. The result of depth profile of As is checked with secondary ion mass spectrometry (SIMS) and the agreement is reasonably good.
authors.affiliation: Institute of High Energy Physis, Academia Sinica, 100080 Beijing.
authors.forename: Y
authors.initials: Y
authors.lastname: Liu
authors.forename: Q
authors.initials: Q
authors.lastname: Fan
authors.forename: Y
authors.initials: Y
authors.lastname: Wu
authors.forename: C
authors.initials: C
authors.lastname: Wei
authors.forename: H
authors.initials: H
authors.lastname: Xiao