[Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry].
An experimental setup and the procedure for the laser resonant ionization mass spectrometry (RIMS) have been described. Both an optical spectrum and a mass spectum have been shown. The detection limit that can be reached by using this procedure has been estimated.
Peng
W
W
Department of Physics, Jilin University, 130023 Changchun.
Jiang
Z
Z
Guo
C
C
Ledingham
K W
KW
Qiu
B C
BC