title: [Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry].
abstract: An experimental setup and the procedure for the laser resonant ionization mass spectrometry (RIMS) have been described. Both an optical spectrum and a mass spectum have been shown. The detection limit that can be reached by using this procedure has been estimated.
authors.affiliation: Department of Physics, Jilin University, 130023 Changchun.
authors.forename: W
authors.initials: W
authors.lastname: Peng
authors.forename: Z
authors.initials: Z
authors.lastname: Jiang
authors.forename: C
authors.initials: C
authors.lastname: Guo
authors.forename: K W
authors.initials: KW
authors.lastname: Ledingham
authors.forename: B C
authors.initials: BC
authors.lastname: Qiu