title: Sm(DBM)3Phen-doped poly(methyl methacrylate) for three-dimensional multilayered optical memory.
abstract: We report on the formation of submicrometer voids within Sm(DBM)3Phen-doped poly(methyl methacrylate) (PMMA) under multiphoton absorption excited by an infrared laser beam. An ultrashort-pulsed laser beam with a pulse width of 200 fs at a wavelength of 800 nm is focused into doped PMMA. The large changes in refractive index and the fluorescence associated with a void allow conventional optical microscopy and reflection-type confocal microscopy to be used as detection methods. Voids can be arranged in a three-dimensional multilayered structure for high-density optical data storage.
authors.affiliation: Structure Research Laboratory and Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei 230026, China.
authors.forename: Hongfang
authors.initials: H
authors.lastname: Jiu
authors.forename: Huohong
authors.initials: H
authors.lastname: Tang
authors.forename: Jingli
authors.initials: J
authors.lastname: Zhou
authors.forename: Jie
authors.initials: J
authors.lastname: Xu
authors.forename: Qijin
authors.initials: Q
authors.lastname: Zhang
authors.forename: Hui
authors.initials: H
authors.lastname: Xing
authors.forename: Wenhao
authors.initials: W
authors.lastname: Huang
authors.forename: Andong
authors.initials: A
authors.lastname: Xia