title: [Photocurrent spectra of undoped LECSIGaAs].
abstract: Extrinsic photocurrent spectra of undoped LECSIGaAs have been measured to investigate the deep levels in this material. A broad photocurrent response band M1 ranging from 0.40 to 0.70 eV has been observed. M1 band reveals five peaks at 0.46, 0.49, 0.56, 0.65 and 0.69 eV, respectively. The onset thresholds for the 0.46, 0.49, 0.56 and 0.69 eV peaks are 0.44, 0.47, 0.51 and 0.67 eV, respectively. It is likely that M1 band is due to different deep levels and each of these deep levels has a concentration larger than 10(14) cm(-3). The origin of M1 band is discussed and possible associations of the 0.44, 0.47 and 0.51 eV thresholds with copper acceptor, EL3 and oxygen donor are presented. The relationship between M1 band and the photoresponse behavior of drain current of GaAs field effect transistor was also investigated.
authors.affiliation: Hebei University of Technology, 300130 Tianjin.
authors.forename: R
authors.initials: R
authors.lastname: Yang
authors.forename: K
authors.initials: K
authors.lastname: Hu
authors.forename: Z
authors.initials: Z
authors.lastname: Zhou
authors.forename: X
authors.initials: X
authors.lastname: Guo