Novel method for site-controlled surface nanodot fabrication by ion beam synthesis.
By using a Ga FIB system to spatially control the implantation of Ga into SiO(2) followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.
Buckmaster
Ryan
R
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan. ryan@imr.tohoku.ac.jp
Hanada
Takashi
T
Kawazoe
Yoshiyuki
Y
Cho
Meoung-Whan
MW
Yao
Takafumi
T
Urushihara
Nobuaki
N
Yamamoto
Akira
A