title: Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique.
abstract: GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.
authors.affiliation: School of Physics, Peking University, Beijing 100871, China.
authors.forename: L
authors.initials: L
authors.lastname: Dai
authors.forename: S F
authors.initials: SF
authors.lastname: Liu
authors.forename: Z X
authors.initials: ZX
authors.lastname: Fu
authors.forename: L P
authors.initials: LP
authors.lastname: You
authors.forename: J J
authors.initials: JJ
authors.lastname: Zhu
authors.forename: B X
authors.initials: BX
authors.lastname: Lin
authors.forename: J C
authors.initials: JC
authors.lastname: Zhang
authors.forename: G G
authors.initials: GG
authors.lastname: Qin