Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.
We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s.
Payne
Marcia M
MM
Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055, USA.
Parkin
Sean R
SR
Anthony
John E
JE
Kuo
Chung-Chen
CC
Jackson
Thomas N
TN