title: Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.
abstract: We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s.
authors.affiliation: Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055, USA.
authors.forename: Marcia M
authors.initials: MM
authors.lastname: Payne
authors.forename: Sean R
authors.initials: SR
authors.lastname: Parkin
authors.forename: John E
authors.initials: JE
authors.lastname: Anthony
authors.forename: Chung-Chen
authors.initials: CC
authors.lastname: Kuo
authors.forename: Thomas N
authors.initials: TN
authors.lastname: Jackson