title: Nanowire single-electron memory.
abstract: We demonstrate storage of electrons in semiconductor nanowires epitaxially grown from Au nanoparticles. The nanowires contain multiple tunnel junctions (MTJs) of InP barriers and InAs quantum dots designed such that the metal seed particles act as storage nodes. By positioning a second nanowire close to the seed particle it is possible to detect tunneling of individual electrons through the MTJ at 4.2 K. A strong memory effect is observed in the detector current when sweeping the writing voltage.
authors.affiliation: Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden. Claes.Thelander@ftf.lth.se
authors.forename: Claes
authors.initials: C
authors.lastname: Thelander
authors.forename: Henrik A
authors.initials: HA
authors.lastname: Nilsson
authors.forename: Linus E
authors.initials: LE
authors.lastname: Jensen
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson