Metal-oxide-Semiconductor capacitors fabricated by layer-by-layer nanoassembly and microfabrication.
Metal oxide semiconductor (MOS) capacitors were fabricated by electrostatic layer-by-layer self-assembly (LbL-SA) combined with a modified lift-off technique. The MOS capacitors were built on both n-type and p-type silicon substrates. The numbers of silicon dioxide (SiO2) nanoparticle layers were varied to characterize the electrical performance of MOS capacitors. Unlike the conventional process, LbL-SA allows us to deposit the thin films for a semiconductor device with a lower temperature, lower cost, and shorter processing time. The stability of the silica insulation layers was also investigated. Atomic force microscopy (AFM) served to monitor the film quality of the self-assembled thin films.
Liu
Yuxin
Y
Institute for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, USA.
Cui
Tianhong
T
D008670:Metals / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000191:economics / Q000648:ultrastructure*; D010087:Oxides / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013696:Temperature; D013997:Time Factors
D008670:Metals; D010087:Oxides; D012822:Silicon Dioxide; D012825:Silicon