Magnetically actuated complementary metal oxide semiconductor resonant cantilever gas sensor systems.
In the present paper, an electromagnetically actuated resonant cantilever gas sensor system is presented that features piezoresistive readout by means of stress-sensitive MOS transistors. The monolithic gas sensor system includes a polymer-coated resonant cantilever and the necessary oscillation feedback circuitry, both monolithically integrated on the same chip. The fully differential feedback circuit allows for operating the device in self-oscillation with the cantilever constituting the frequency-determining element of the feedback loop. The combination of magnetic actuation and transistor-based readout entails little power dissipation on the cantilever and reduces the temperature increase in the sensitive polymer layer to less than 1 degrees C, whereas previous designs with thermally actuated cantilevers showed a temperature increase of up to 19 degrees C. The lower temperature of the sensitive polymer layer on the cantilever directly improves the sensitivity of the sensor system as the extent of analyte physisorption decreases with increasing temperature. The electromagnetic sensor design shows an almost 2 times larger gas sensitivity than the earlier design, which is thermally actuated and read out using p-diffused resistors. The gas sensor is fabricated using an industrial complementary metal oxide semiconductor (CMOS) process and post-CMOS micromachining.
Vancura
C
C
Physical Electronics Laboratory, ETH Zurich, HPT-F16, 8093 Zurich, Switzerland. cvancura@phys.ethz.ch
Rüegg
M
M
Li
Y
Y
Hagleitner
C
C
Hierlemann
A
A