title: Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask.
abstract: A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-microm wavelength was produced and evaluated.
authors.affiliation: Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA. lpang@ece.ucsd.edu
authors.forename: Lin
authors.initials: L
authors.lastname: Pang
authors.forename: Maziar
authors.initials: M
authors.lastname: Nezhad
authors.forename: Uriel
authors.initials: U
authors.lastname: Levy
authors.forename: Chia-Ho
authors.initials: CH
authors.lastname: Tsai
authors.forename: Yeshaiahu
authors.initials: Y
authors.lastname: Fainman