Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask.
A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-microm wavelength was produced and evaluated.
Pang
Lin
L
Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA. lpang@ece.ucsd.edu
Nezhad
Maziar
M
Levy
Uriel
U
Tsai
Chia-Ho
CH
Fainman
Yeshaiahu
Y