title: Response of a Si-diode-based device to fast neutrons.
abstract: Semiconductor devices based on a Si-detector are frequently used for charged particle's detection; one application being in the investigation of cosmic radiation fields. From the spectra of energy deposition events in such devices, the total energy deposited by the radiation in silicon can be derived. This contribution presents the results of studies concerning the response of this type of detector to fast neutrons. First, the spectrum of energy deposition was established in fast neutron radiation fields with average energies from 0.5 to 50 MeV. It was found that these spectra vary significantly with the neutron energy. The comparison with the spectra registered in photon beams permitted an estimation of the part of energy deposited that could be attributed to neutrons. It was found that this part increases rapidly with neutron energy. The possibilities to use this type of detector for neutron detection and dosimetry for radiation protection are analysed and discussed.
authors.affiliation: Nuclear Physics Institute of the AS CR, Praha, Czech Republic. spurny@ujf.cas.cz
authors.forename: Frantisek
authors.initials: F
authors.lastname: Spurný
mesh_terms: D000401:Aircraft; D002588:Cesium Radioisotopes; D003037:Cobalt Radioisotopes; D005214:Fast Neutrons; D018499:Linear Energy Transfer; D017785:Photons; D020959:Polyethylene; D011829:Radiation Dosage; D011834:Radiation Monitoring / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon
chemical_list: D002588:Cesium Radioisotopes; D003037:Cobalt Radioisotopes; D020959:Polyethylene; D012825:Silicon