title: Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.
abstract: We report on high-resolution transmission electron microscope structural studies of InAs colloidal semiconductor nanocrystal quantum dots (NCQDs) on ultrathin GaAs (001) semiconductor single-crystal substrates. We employ a benign method for preparing electron transparent specimens that is suitable for the study of such fragile samples. The image contrast comprises contributions from electron scattering from both the NCs and the GaAs substrate. Long-term electron exposure studies reveal different damage mechanisms operative in the nanocrystals and the substrate.
authors.affiliation: Nanostructure Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, California 90089-0241, USA. konkar@usc.edu
authors.forename: Atul
authors.initials: A
authors.lastname: Konkar
authors.forename: Siyuan
authors.initials: S
authors.lastname: Lu
authors.forename: Anupam
authors.initials: A
authors.lastname: Madhukar
authors.forename: Steven M
authors.initials: SM
authors.lastname: Hughes
authors.forename: A Paul
authors.initials: AP
authors.lastname: Alivisatos
mesh_terms: D001152:Arsenicals / Q000032:analysis / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000032:analysis / Q000737:chemistry*; D007204:Indium / Q000032:analysis / Q000737:chemistry*; D008422:Materials Testing / Q000379:methods; D046529:Microscopy, Electron, Transmission / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D045663:Quantum Dots; D012666:Semiconductors
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide