Deformation electron-phonon coupling in disordered semiconductors and nanostructures.
We study the electron-phonon relaxation (dephasing) rate in disordered semiconductors and low-dimensional structures. The relaxation is determined by the interference of electron scattering via the deformation potential and elastic electron scattering from impurities and defects. We have found that in contrast with the destructive interference in metals, which results in the Pippard ineffectiveness condition for the electron-phonon interaction, the interference in semiconducting structures substantially enhances the effective electron-phonon coupling. The obtained results provide an explanation to energy relaxation in silicon structures.
Sergeev
A
A
Research Foundation, University at Buffalo, Buffalo, New York 14260, USA. asergeev@eng.buffalo.edu
Reizer
M Yu
MY
Mitin
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V