Size-dependent photoconductivity in MBE-grown GaN-nanowires.
We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface.
Calarco
Raffaella
R
Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany. r.calarco@fz.juelich.de
Marso
Michel
M
Richter
Thomas
T
Aykanat
Ali I
AI
Meijers
Ralph
R
V D Hart
André
A
Stoica
Toma
T
Lüth
Hans
H
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004559:Electric Wiring; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods*; D004583:Electrons; D005708:Gallium / Q000032:analysis* / Q000737:chemistry* / Q000528:radiation effects; D049329:Nanostructures / Q000032:analysis / Q000737:chemistry / Q000528:radiation effects / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D010316:Particle Size; D010777:Photochemistry / Q000295:instrumentation / Q000379:methods*
C473348:gallium nitride; D005708:Gallium