title: Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure.
abstract: First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal the possibility of efficient spin injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier. We demonstrate that Cr atoms segregate into the GaN region and that these interfaces retain their half-metallic behavior leading to a complete, i.e., 100%, spin polarization of the conduction electrons. This property makes the wide band-gap nitrides doped with Cr to be excellent candidates for high-efficiency magnetoelectronic devices.
authors.affiliation: Physics and Astronomy Department, Northwestern University, Evanston, Illinois 60208-3112, USA.
authors.forename: J E
authors.initials: JE
authors.lastname: Medvedeva
authors.forename: A J
authors.initials: AJ
authors.lastname: Freeman
authors.forename: X Y
authors.initials: XY
authors.lastname: Cui
authors.forename: C
authors.initials: C
authors.lastname: Stampfl
authors.forename: N
authors.initials: N
authors.lastname: Newman