Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.
We report on high-resolution transmission electron microscope structural studies of InAs colloidal semiconductor nanocrystal quantum dots (NCQDs) on ultrathin GaAs (001) semiconductor single-crystal substrates. We employ a benign method for preparing electron transparent specimens that is suitable for the study of such fragile samples. The image contrast comprises contributions from electron scattering from both the NCs and the GaAs substrate. Long-term electron exposure studies reveal different damage mechanisms operative in the nanocrystals and the substrate.
Konkar
Atul
A
Nanostructure Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, California 90089-0241, USA. konkar@usc.edu
Lu
Siyuan
S
Madhukar
Anupam
A
Hughes
Steven M
SM
Alivisatos
A Paul
AP
D001152:Arsenicals / Q000032:analysis / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000032:analysis / Q000737:chemistry*; D007204:Indium / Q000032:analysis / Q000737:chemistry*; D008422:Materials Testing / Q000379:methods; D046529:Microscopy, Electron, Transmission / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D045663:Quantum Dots; D012666:Semiconductors
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide