title: Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001).
abstract: A highly anisotropic growth morphology is found for heteroepitaxial gallium sesquiselenide (Ga2Se3) on the lattice matched substrate, arsenic-terminated Si(001). Scanning tunneling microscopy of Ga2Se3 films reveals nanoscale, wirelike structures covering the surface in parallel lines, less than 1 nm wide and up to 30 nm long. Core-level photoemission spectroscopy and diffraction reveals the local structure of buried Ga and Se atoms to reflect the bulk, defected zinc-blende structure of beta-Ga2Se3, which contains ordered 110 arrays of Ga vacancies. These ordered vacancy lines are proposed to be responsible for the observed growth anisotropy in heteroepitaxial Ga2Se3.
authors.affiliation: Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA.
authors.forename: Taisuke
authors.initials: T
authors.lastname: Ohta
authors.forename: D A
authors.initials: DA
authors.lastname: Schmidt
authors.forename: Shuang
authors.initials: S
authors.lastname: Meng
authors.forename: A
authors.initials: A
authors.lastname: Klust
authors.forename: A
authors.initials: A
authors.lastname: Bostwick
authors.forename: Q
authors.initials: Q
authors.lastname: Yu
authors.forename: Marjorie A
authors.initials: MA
authors.lastname: Olmstead
authors.forename: F S
authors.initials: FS
authors.lastname: Ohuchi