Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001).
A highly anisotropic growth morphology is found for heteroepitaxial gallium sesquiselenide (Ga2Se3) on the lattice matched substrate, arsenic-terminated Si(001). Scanning tunneling microscopy of Ga2Se3 films reveals nanoscale, wirelike structures covering the surface in parallel lines, less than 1 nm wide and up to 30 nm long. Core-level photoemission spectroscopy and diffraction reveals the local structure of buried Ga and Se atoms to reflect the bulk, defected zinc-blende structure of beta-Ga2Se3, which contains ordered 110 arrays of Ga vacancies. These ordered vacancy lines are proposed to be responsible for the observed growth anisotropy in heteroepitaxial Ga2Se3.
Ohta
Taisuke
T
Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA.
Schmidt
D A
DA
Meng
Shuang
S
Klust
A
A
Bostwick
A
A
Yu
Q
Q
Olmstead
Marjorie A
MA
Ohuchi
F S
FS