Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure.
First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal the possibility of efficient spin injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier. We demonstrate that Cr atoms segregate into the GaN region and that these interfaces retain their half-metallic behavior leading to a complete, i.e., 100%, spin polarization of the conduction electrons. This property makes the wide band-gap nitrides doped with Cr to be excellent candidates for high-efficiency magnetoelectronic devices.
Medvedeva
J E
JE
Physics and Astronomy Department, Northwestern University, Evanston, Illinois 60208-3112, USA.
Freeman
A J
AJ
Cui
X Y
XY
Stampfl
C
C
Newman
N
N