title: Size-dependent photoconductivity in MBE-grown GaN-nanowires.
abstract: We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface.
authors.affiliation: Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany. r.calarco@fz.juelich.de
authors.forename: Raffaella
authors.initials: R
authors.lastname: Calarco
authors.forename: Michel
authors.initials: M
authors.lastname: Marso
authors.forename: Thomas
authors.initials: T
authors.lastname: Richter
authors.forename: Ali I
authors.initials: AI
authors.lastname: Aykanat
authors.forename: Ralph
authors.initials: R
authors.lastname: Meijers
authors.forename: André
authors.initials: A
authors.lastname: V D Hart
authors.forename: Toma
authors.initials: T
authors.lastname: Stoica
authors.forename: Hans
authors.initials: H
authors.lastname: Lüth
mesh_terms: D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004559:Electric Wiring; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods*; D004583:Electrons; D005708:Gallium / Q000032:analysis* / Q000737:chemistry* / Q000528:radiation effects; D049329:Nanostructures / Q000032:analysis / Q000737:chemistry / Q000528:radiation effects / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D010316:Particle Size; D010777:Photochemistry / Q000295:instrumentation / Q000379:methods*
chemical_list: C473348:gallium nitride; D005708:Gallium