title: Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy.
abstract: Positron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1-2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400-500 K convert the defects to larger complexes where the open volume is neighbored by 2-3 Sb atoms. This behavior is attributed to the migration of vacancy-Sb pairs and demonstrates at atomic level the metastability of the material grown by epitaxy at low temperature.
authors.affiliation: Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland.
authors.forename: M
authors.initials: M
authors.lastname: Rummukainen
authors.forename: I
authors.initials: I
authors.lastname: Makkonen
authors.forename: V
authors.initials: V
authors.lastname: Ranki
authors.forename: M J
authors.initials: MJ
authors.lastname: Puska
authors.forename: K
authors.initials: K
authors.lastname: Saarinen
authors.forename: H-J L
authors.initials: HJ
authors.lastname: Gossmann