title: High-performance field-effect transistors based on Langmuir-Blodgett films of cyclo[8]pyrrole.
abstract: We demonstrate the field-effect transistors (FETs) made of cyclo[8]pyrrole thin films prepared by the Langmuir-Blodgett (LB) method. The cyclo[8]pyrrole molecule possesses a 30-pi-electron system and narrower highest-occupied molecular orbital-lowest-unoccupied molecular orbital energy gap (0.63 eV), forms a stable, reproducible monolayer at the air-water interface, and transfers onto a substrate with a nearly unity transfer ratio and face-to-face configuration due to its strong pi-pi interaction. The LB films are uniform characterized by atomic force microscopy and in ordered form confirmed by X-ray diffraction. The FET exhibited high performances with one of the highest hole mobilities (0.68 cm2 V(-1) s(-1)) for thin-film transistors and a high on/off ratio, implying a promising material in the FET family.
authors.affiliation: Laboratory of Organic Solids, Center for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, People's Republic of China.
authors.forename: Hai
authors.initials: H
authors.lastname: Xu
authors.forename: Gui
authors.initials: G
authors.lastname: Yu
authors.forename: Wei
authors.initials: W
authors.lastname: Xu
authors.forename: Yu
authors.initials: Y
authors.lastname: Xu
authors.forename: Guanglei
authors.initials: G
authors.lastname: Cui
authors.forename: Deqing
authors.initials: D
authors.lastname: Zhang
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu
authors.forename: Daoben
authors.initials: D
authors.lastname: Zhu