High-performance field-effect transistors based on Langmuir-Blodgett films of cyclo[8]pyrrole.
We demonstrate the field-effect transistors (FETs) made of cyclo[8]pyrrole thin films prepared by the Langmuir-Blodgett (LB) method. The cyclo[8]pyrrole molecule possesses a 30-pi-electron system and narrower highest-occupied molecular orbital-lowest-unoccupied molecular orbital energy gap (0.63 eV), forms a stable, reproducible monolayer at the air-water interface, and transfers onto a substrate with a nearly unity transfer ratio and face-to-face configuration due to its strong pi-pi interaction. The LB films are uniform characterized by atomic force microscopy and in ordered form confirmed by X-ray diffraction. The FET exhibited high performances with one of the highest hole mobilities (0.68 cm2 V(-1) s(-1)) for thin-film transistors and a high on/off ratio, implying a promising material in the FET family.
Xu
Hai
H
Laboratory of Organic Solids, Center for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, People's Republic of China.
Yu
Gui
G
Xu
Wei
W
Xu
Yu
Y
Cui
Guanglei
G
Zhang
Deqing
D
Liu
Yunqi
Y
Zhu
Daoben
D