title: Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.
abstract: Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor-liquid-solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements revealed a strong luminescence peak at approximately 378 nm. This work demonstrates the possibility of growing heterojunction arrays of ZnO nanorods on AlxGa1-xN, which has a tunable band gap from 3.44 to 6.20 eV by changing the Al composition from 0 to 1, and opens a new channel for building vertically aligned heterojunction device arrays with tunable optical properties and the realization of a new class of nanoheterojunction devices.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Xudong
authors.initials: X
authors.lastname: Wang
authors.forename: Jinhui
authors.initials: J
authors.lastname: Song
authors.forename: Peng
authors.initials: P
authors.lastname: Li
authors.forename: Jae Hyun
authors.initials: JH
authors.lastname: Ryou
authors.forename: Russell D
authors.initials: RD
authors.lastname: Dupuis
authors.forename: Christopher J
authors.initials: CJ
authors.lastname: Summers
authors.forename: Zhong L
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D001672:Biocompatible Materials / Q000737:chemistry; D015374:Biosensing Techniques; D005708:Gallium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures / Q000737:chemistry*; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D017607:Aluminum Compounds; D001672:Biocompatible Materials; C473348:gallium nitride; C052045:aluminum nitride; D005708:Gallium; D015034:Zinc Oxide