Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.
Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor-liquid-solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements revealed a strong luminescence peak at approximately 378 nm. This work demonstrates the possibility of growing heterojunction arrays of ZnO nanorods on AlxGa1-xN, which has a tunable band gap from 3.44 to 6.20 eV by changing the Al composition from 0 to 1, and opens a new channel for building vertically aligned heterojunction device arrays with tunable optical properties and the realization of a new class of nanoheterojunction devices.
Wang
Xudong
X
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
Song
Jinhui
J
Li
Peng
P
Ryou
Jae Hyun
JH
Dupuis
Russell D
RD
Summers
Christopher J
CJ
Wang
Zhong L
ZL
D017607:Aluminum Compounds / Q000737:chemistry*; D001672:Biocompatible Materials / Q000737:chemistry; D015374:Biosensing Techniques; D005708:Gallium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures / Q000737:chemistry*; D015034:Zinc Oxide / Q000737:chemistry*
D017607:Aluminum Compounds; D001672:Biocompatible Materials; C473348:gallium nitride; C052045:aluminum nitride; D005708:Gallium; D015034:Zinc Oxide