title: Adsorption density of spherical cetyltrimethylammonium bromide (CTAB) micelles at a silica/silicon surface.
abstract: In situ Fourier transform infrared internal reflection spectroscopy (FT-IR/IRS) was used to calculate the adsorption density values for spherical cetyltrimethylammonium bromide (CTAB) micelles at the silica/silicon (SiO2/Si) surface based on a previously developed adsorption density equation. Recent advances in atomic force microscopy (AFM) imaging methodology have led to the ability to image surface micelles, which was not possible previously. These AFM images have been used to independently calculate adsorption density values through offline fast Fourier transform (FFT) analysis. The adsorption density values measured from in situ FT-IR/IRS spectra and from AFM images showed good agreement and provide further validation of the FT-IR/IRS adsorption density equation in the low concentration range.
authors.affiliation: Department of Metallurgical Engineering, University of Utah, 135 So. 1460 E. Rm 412, Salt Lake City, Utah 84112, USA.
authors.forename: Vamsi K
authors.initials: VK
authors.lastname: Paruchuri
authors.forename: Keqing
authors.initials: K
authors.lastname: Fa
authors.forename: Brij M
authors.initials: BM
authors.lastname: Moudgil
authors.forename: Jan D
authors.initials: JD
authors.lastname: Miller
mesh_terms: D000327:Adsorption; D000465:Algorithms; D000077286:Cetrimonium; D002593:Cetrimonium Compounds / Q000032:analysis / Q000737:chemistry*; D008823:Micelles; D018625:Microscopy, Atomic Force / Q000379:methods*; D012825:Silicon / Q000032:analysis / Q000737:chemistry*; D012822:Silicon Dioxide / Q000032:analysis / Q000737:chemistry*; D017550:Spectroscopy, Fourier Transform Infrared / Q000379:methods*; D013499:Surface Properties; D013501:Surface-Active Agents / Q000032:analysis / Q000737:chemistry*
chemical_list: D002593:Cetrimonium Compounds; D008823:Micelles; D013501:Surface-Active Agents; D012822:Silicon Dioxide; D012825:Silicon; D000077286:Cetrimonium