Parallel fabrication of sub-50-nm uniformly sized nanoparticles by deposition through a patterned silicon nitride nanostencil.
Using low-pressure chemical vapor deposition of silicon dioxide, we have reduced the size of 56-nm features in a silicon nitride membrane, called a stencil, down to 36 nm. Sub-50-nm uniformly sized nanoparticles are fabricated by electron-beam deposition of Pt through the stencil mask. A self-assembled monolayer (SAM) of tridecafluoro-1,1,2,2-tetrahydrooctyl-1-trichlorosilane was used to reduce Pt clogging of the nanosize holes during deposition as well as to protect the stencil during the postdeposition Pt removal. X-ray photoelectron spectroscopy shows that the SAM protects the stencil efficiently during this postdeposition removal of Pt.
Yan
X-M
XM
Department of Chemistry, University of California, Berkeley, California 94720, USA.
Contreras
A M
AM
Koebel
M M
MM
Liddle
J A
JA
Somorjai
G A
GA
D004583:Electrons; D008855:Microscopy, Electron, Scanning; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D009584:Nitrogen / Q000737:chemistry*; D010984:Platinum / Q000737:chemistry; D012821:Silanes / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013052:Spectrometry, X-Ray Emission; D013055:Spectrophotometry, Infrared
D012821:Silanes; D010984:Platinum; D012822:Silicon Dioxide; D009584:Nitrogen; C065893:trichlorosilane; D012825:Silicon