n-Type field-effect transistors made of an individual nitrogen-doped multiwalled carbon nanotube.
We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in detail. Temperature dependence of two-terminal transport experiments suggests that transport is dominated by thermionic emission and tunneling through a 0.2 eV Schottky contact barrier.
Xiao
Kai
K
Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China.
Liu
Yunqi
Y
Hu
Ping'an
P
Yu
Gui
G
Sun
Yanming
Y
Zhu
Daoben
D