title: n-Type field-effect transistors made of an individual nitrogen-doped multiwalled carbon nanotube.
abstract: We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in detail. Temperature dependence of two-terminal transport experiments suggests that transport is dominated by thermionic emission and tunneling through a 0.2 eV Schottky contact barrier.
authors.affiliation: Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China.
authors.forename: Kai
authors.initials: K
authors.lastname: Xiao
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu
authors.forename: Ping'an
authors.initials: P
authors.lastname: Hu
authors.forename: Gui
authors.initials: G
authors.lastname: Yu
authors.forename: Yanming
authors.initials: Y
authors.lastname: Sun
authors.forename: Daoben
authors.initials: D
authors.lastname: Zhu