title: Non-destructive observation of electrically detected magnetic resonance in bulk material using AC bias.
abstract: DC bias is normally found in conventional measurements of electrically detected magnetic resonance (EDMR). Usually, electrodes are formed on the sample surface to make ohmic contacts for detecting changes in the electrical characteristics of the sample material. Thus, destructive procedures are required to detect the EDMR signal of bulk material with such methods. An AC bias detection technique was developed to allow the non-destructive EDMR measurement of bulk materials. An AC bridge circuit was constructed to detect the change in impedance of the sample, which when changed by ESR, an unbalanced AC voltage can be detected. By detecting this AC bias, it is possible to cancel the effects, such as Shottky barriers, that disturb the ohmic contact between the electrodes and a sample material. Further, the AC bias current penetrates the thin surface layer of a sample such as silicon oxide, which normally obstructs a DC current. This method was utilized using conductive rubber contacts for non-destructive EDMR measurements of part of a silicon wafer. EDMR spectra observed were the same as those obtained by the conventional method of using DC bias detection.
authors.affiliation: Yamagata Research Institute of Technology, Yamagata 990-2473, Japan.
authors.forename: Toshiyuki
authors.initials: T
authors.lastname: Sato
authors.forename: Hidekatsu
authors.initials: H
authors.lastname: Yokoyama
authors.forename: Hiroaki
authors.initials: H
authors.lastname: Ohya
mesh_terms: D000465:Algorithms; D003198:Computer Simulation; D017097:Electric Impedance; D004563:Electrochemistry / Q000379:methods*; D004566:Electrodes; D004574:Electromagnetic Fields; D009682:Magnetic Resonance Spectroscopy / Q000379:methods*; D008422:Materials Testing / Q000379:methods*; D008956:Models, Chemical; D012825:Silicon / Q000032:analysis* / Q000737:chemistry*
chemical_list: D012825:Silicon