Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS: resonant Raman scattering and angle dependence.
The lowest limit for detection (LLD) of the impurity concentration doped in semiconductors in the case of fluorescence XAFS measurements has been investigated as a function of the matrix of the impurity and the geometry of the measurement. When the impurity concentration is very low and other background noise is well suppressed, X-ray resonant Raman scattering by the constituent atoms of the matrix remains as a major background for the fluorescence-detected XAFS measurement. For example, in the fluorescence-detected XAFS measurement for Er-doped semiconductors at the Er L(III)-edge, the LLD of the Er concentration was about 5 x 10(14) to 1 x 10(15) cm(-2) for GaAs and GaP, and lower than 1 x 10(14) cm(-2) for InP. The resonant Raman scattering of Ga atoms in the host semiconductor determines the LLD.
Takeda
Y
Y
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan. takeda@numse.nagoya-u.ac.jp
Ofuchi
H
H
Kyouzu
H
H
Takahashi
R
R
Tabuchi
M
M
D004871:Erbium / Q000032:analysis*; D008420:Manufactured Materials / Q000032:analysis*; D008422:Materials Testing / Q000379:methods*; D008832:Microchemistry / Q000379:methods*; D012031:Refractometry / Q000379:methods*; D012542:Scattering, Radiation; D012666:Semiconductors; D013052:Spectrometry, X-Ray Emission / Q000379:methods*; D013059:Spectrum Analysis, Raman / Q000379:methods*
D004871:Erbium