title: Structural analysis of the reconstructed Si(001)-C surface.
abstract: The atomic structure of reconstructed Si(001)c(4 x 4)-C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C(2)H(4)) molecules have been exposed on Si(001)-(2 x 1) surface at 700 degrees C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface.
authors.affiliation: Institute of Physics & Applied Physics, Yonsei University, Seoul 120-749, Korea.
authors.forename: J Y
authors.initials: JY
authors.lastname: Park
authors.forename: J H
authors.initials: JH
authors.lastname: Seo
authors.forename: C N
authors.initials: CN
authors.lastname: Whang
authors.forename: S S
authors.initials: SS
authors.lastname: Kim
authors.forename: D S
authors.initials: DS
authors.lastname: Choi
authors.forename: K H
authors.initials: KH
authors.lastname: Chae