title: A MOSFET-based model of a Class 2 nerve membrane.
abstract: We have constructed a nerve membrane using MOSFET circuitry, which can be a basic element of an FET-based neural system. Its mechanism of action potentials generation is designed to reproduce that of the Hodgkin-Huxley equations. The responses to singlet, doublet, repetitive pulse, and sustained stimuli are analyzed to show that it exhibits similar properties to the Hodgkin-Huxley equations; namely, 1) excitable dynamics with generation of action potentials, 2) the existence of a chaotic response to periodic stimuli, and 3) Class 2 excitability. It is known that Class 2 excitability is generated by an inverted Hopf bifurcation. We have applied Hopf bifurcation theory to our nerve membrane's system equations and have shown a routine for ascertaining whether a certain parameter set generates an inverted Hopf bifurcation.
authors.affiliation: ERATO Aihara Complexity Modeling Project, JST, Tokyo 151-0065, Japan. kohno@sat.t.u-tokyo.ac.jp
authors.forename: Takashi
authors.initials: T
authors.lastname: Kohno
authors.forename: Kazuyuki
authors.initials: K
authors.lastname: Aihara
mesh_terms: D000200:Action Potentials / Q000502:physiology*; D032701:Biomimetics / Q000295:instrumentation / Q000379:methods*; D002462:Cell Membrane / Q000502:physiology*; D003198:Computer Simulation; D008564:Membrane Potentials / Q000502:physiology*; D008959:Models, Neurological; D009474:Neurons / Q000502:physiology*; D014173:Transistors, Electronic