Effects of threshold voltage variability on the characteristics of high sensitivity metal-oxide-semiconductor dosimeters.
The consequence of the variability of the threshold voltage of high sensitivity metal-oxide-semiconductor (MOS) dosimeters on the accuracy of the measured dose is presented.
LAAS-CNRS-7, Avenue du colonel Roche, 31077 Toulouse cedex 04, France. sarra@laas.fr
Gérard
G
Sarrabayrouse
Stelios
S
Siskos
Ali
A
Boukabache
D011874:Radiometry / Q000295:instrumentation*; D015203:Reproducibility of Results; D012666:Semiconductors