PIN silicon diode fast neutron detector.
Two batches of diodes, with different structural ratios (the ratio of area and thickness), were made using different manufacturing processes. The energy response of the first batch to 15 kinds of monoenergetic neutrons ranging from 180 keV to 17.56 MeV was tested, and the neutron source response of both batches to 239Pu-Be neutron source was measured. The energy deposition in the diodes irradiated by 1 keV to 20 MeV monoenergetic neutrons was calculated with simulation procedure. The response curve of the experimental results showed an approximately similar trend to that of theoretical computation. Based on the results of the neutron source response experiments, it was concluded that the response of fast neutron varied linearly with the structural ratio of the detectors.
Zhou
Chunzhi
C
Research Institute of Chemical Defense, P.O. Box 1044-203, Beijing 102205, China. zhoucz@sohu.com
Zhao
Jianxing
J
Xiao
Wuyun
W
D005214:Fast Neutrons; D018499:Linear Energy Transfer; D011834:Radiation Monitoring / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon
D012825:Silicon