Significant improvement of luminance and stability of a red electroluminescent device using nanocrystalline silicon.
An electroluminescent (EL) device using nanocrystalline silicon (nc-Si) was fabricated by annealing after cosputtering of Si chips and silicon dioxide target and subsequent hydrofluoric acid solution treatment. The device emitted a red light with a peak at 670 nm by applying a low direct current (DC) operating voltage of 4.5 V. The external quantum efficiency (EQE) of red luminescence at 4.5 V was 0.35%. Moreover, the intensity of red luminescence was very stable for an operating time of 15000 min. These results are a strong indication that the HF-treated device can be adapted to future light-related devices.
Sato
Keisuke
K
Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka, Hatoyama, Hikigun, Saitama 350-0394, Japan.
Hirakuri
Kenji
K
Izumi
Tomio
T
D003116:Color; D003460:Crystallization / Q000379:methods; D003461:Crystallography; D004559:Electric Wiring; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D049449:Luminescence; D008163:Luminescent Measurements / Q000295:instrumentation* / Q000379:methods; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010777:Photochemistry / Q000295:instrumentation* / Q000379:methods; D012825:Silicon / Q000032:analysis / Q000737:chemistry*
D012825:Silicon