title: InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm.
abstract: We report that InAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained.
authors: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan.
authors: K W
authors: KW
authors: Su
authors: H C
authors: HC
authors: Lai
authors: A
authors: A
authors: Li
authors: Y F
authors: YF
authors: Chen
authors: K F
authors: KF
authors: Huang