title: Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates.
abstract: Vertically well aligned P-doped ZnO nanowires were prepared on ZnO-Ga/glass templates at 550 degrees C by reactive evaporation without metal catalysts and the nanowires were found to be single crystalline with the würtzite structure, oriented in the c-axis direction; the P-doping shortened the physical lengths of the ZnO nanowires without changing their diameter, and furthermore, the introduction of P atoms resulted in a much weaker and broader ZnO band edge emission.
authors: Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China.
authors: Cheng-Liang
authors: CL
authors: Hsu
authors: Shoou-Jinn
authors: SJ
authors: Chang
authors: Yan-Ru
authors: YR
authors: Lin
authors: Song-Yeu
authors: SY
authors: Tsai
authors: I-Cherng
authors: IC
authors: Chen