Doping of Si into GaN nanowires and optical properties of resulting composites.
Doping of Si into GaN nanowires has been successfully attained via thermal evaporation in the presence of a suitable gas atmosphere. Analysis indicated that the Si-doped GaN nanowire is a single crystal with a hexagonal wurtzite structure, containing 2.2 atom % of Si. The broadening and the shift of Raman peak to lower frequency are observed, which may be attributed to surface disorder and various strengths of the stress. The band-gap emission (358 nm) of Si-doped GaN nanowires relative to that (370 nm) of GaN nanowires has an apparent blue shift (approximately 12 nm), which can be ascribed to doping impurity Si.
Xu
Congkang
C
Department of Physics and Electron Spin Science Center, Pohang University of Science and Technology, Pohang 790-784, South Korea.
Chung
Sangyong
S
Kim
Misuk
M
Kim
Dong Eon
DE
Chon
Bonghwan
B
Hong
Sangsu
S
Joo
Taiha
T
D005708:Gallium / Q000737:chemistry*; D006358:Hot Temperature; D008420:Manufactured Materials; D008422:Materials Testing; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D008956:Models, Chemical; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013059:Spectrum Analysis, Raman; D013696:Temperature; D013816:Thermodynamics; D014961:X-Ray Diffraction
C473348:gallium nitride; D005708:Gallium; D012825:Silicon