title: Analysis of ALD-processed thin films by ion-beam techniques.
abstract: This review introduces the possibilities of ion-beam techniques for the analysis of thin films and thin-film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOF-ERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators).
authors: Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015 Espoo, Finland.
authors: Matti
authors: M
authors: Putkonen
authors: Timo
authors: T
authors: Sajavaara
authors: Lauri
authors: L
authors: Niinistö
authors: Juhani
authors: J
authors: Keinonen
mesh_terms: D007477:Ions; D008567:Membranes, Artificial; D036103:Nanotechnology / Q000379:methods*; D013057:Spectrum Analysis / Q000379:methods*
chemical_list: D007477:Ions; D008567:Membranes, Artificial