title: Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.
abstract: Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.
authors.forename: Hui-Feng
authors.initials: HF
authors.lastname: Lin
authors.forename: Chun-Te
authors.initials: CT
authors.lastname: Wu
authors.forename: Wei-Cheng
authors.initials: WC
authors.lastname: Chien
authors.forename: Sheng-Wen
authors.initials: SW
authors.lastname: Chen
authors.forename: Hui-Ling
authors.initials: HL
authors.lastname: Kao
authors.forename: Jen-Inn
authors.initials: JI
authors.lastname: Chyi
authors.forename: Jyh-Shin
authors.initials: JS
authors.lastname: Chen