The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron beam.
Photoreflectance measurements were performed to investigate the optical properties in the electron beam irradiation semi-insulating GaAs(e-beam irradiation GaAs) and semi-insulating GaAs(SI-GaAs). A considerable increase of the PR amplitudes has been registered after the e-beam irradiation in comparison with the GaAs. It is that result of a higher electron scattering on the lattice defects created by the e-beam.
Yu
J I
JI
Department of Physics, Yeungnam University, Gyeongsan 712-749, South Korea.
Kim
K H
KH
Bae
I H
IH
Lee
D Y
DY
Kim
D L
DL
D001152:Arsenicals / Q000737:chemistry*; D004583:Electrons; D005708:Gallium / Q000737:chemistry*; D055095:Optics and Photonics; D010777:Photochemistry; D017785:Photons; D013057:Spectrum Analysis
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium