Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.
Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.
Lin
Hui-Feng
HF
Wu
Chun-Te
CT
Chien
Wei-Cheng
WC
Chen
Sheng-Wen
SW
Kao
Hui-Ling
HL
Chyi
Jen-Inn
JI
Chen
Jyh-Shin
JS