title: GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls.
abstract: Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity.
authors.affiliation: Chemistry and Physics of Materials Unit and CSIR Centre of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore, 540064, India.
authors.forename: Ujjal K
authors.initials: UK
authors.lastname: Gautam
authors.forename: S R C
authors.initials: SR
authors.lastname: Vivekchand
authors.forename: A
authors.initials: A
authors.lastname: Govindaraj
authors.forename: C N R
authors.initials: CN
authors.lastname: Rao