title: Passively mode-locking Nd:Gd0.5Y0.5VO4 laser with an In0.25Ga0.75As absorber grown at low temperature.
abstract: We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd0.5Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz.
authors.affiliation: Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. chinawygxjw@163.com
authors.forename: Yong-Gang
authors.initials: YG
authors.lastname: Wang
authors.forename: Xiao-Yu
authors.initials: XY
authors.lastname: Ma
authors.forename: Ya-Xian
authors.initials: YX
authors.lastname: Fan
authors.forename: Hui-Tian
authors.initials: HT
authors.lastname: Wang