Magnetic-field-dependent carrier injection at La2/3Sr1/3MnO3/ and organic semiconductors interfaces.
We have fabricated organic diodes utilizing several pi-conjugated organic semiconductors (OSEC) as spacer layers between La2/3Sr1/3MnO3 (LSMO) and various metallic electrodes, and measured their magnetoresistance (MR) and magnetoelectroluminescence (MEL) responses. The devices exhibit large negative high-field MR responses that resemble the MR response of the LSMO electrode, but amplified by approximately 3 orders in the resistance, and accompanied by a positive high-field MEL effect. These magnetic-field effects result from enhanced carrier injection at the LSMO-OSEC interface that is attributed to the anomalous field-dependent Fermi level shift in LSMO.
Wu
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Department of Physics, University of Utah, Salt Lake City, Utah 84112, USA.
Xiong
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Li
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Vardeny
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Shi
Jing
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