title: Generation of spin currents via Raman scattering.
abstract: We show theoretically that stimulated spin-flip Raman scattering can be used to inject spin currents in doped semiconductors with spin-split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zinc blende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.
authors.affiliation: Department of Physics and Institute for Optical Sciences, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7, Canada. anajmaie@physics.utoronto.ca
authors.forename: Ali
authors.initials: A
authors.lastname: Najmaie
authors.forename: E Ya
authors.initials: EY
authors.lastname: Sherman
authors.forename: J E
authors.initials: JE
authors.lastname: Sipe