Generation of spin currents via Raman scattering.
We show theoretically that stimulated spin-flip Raman scattering can be used to inject spin currents in doped semiconductors with spin-split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zinc blende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.
Najmaie
Ali
A
Department of Physics and Institute for Optical Sciences, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7, Canada. anajmaie@physics.utoronto.ca
Sherman
E Ya
EY
Sipe
J E
JE