Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes.
We investigated the current-voltage characteristics and responsivity of photodiodes fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a sulfur-containing atmosphere. The photodiodes that we fabricated have a broad spectral response ranging from the visible to the near infrared (400-1600 nm). The responsivity depends on substrate doping, microstructuring fluence, and annealing temperature. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, 2 orders of magnitude higher than for standard silicon photodiodes. For wavelengths below the bandgap we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm.
Carey
James E
JE
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA.
Crouch
Catherine H
CH
Shen
Mengyan
M
Mazur
Eric
E