Active optical control of the terahertz reflectivity of high-resistivity semiconductors.
We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high-resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R <3%) and highly reflective (R >85%) limits by means of the intensity and wavelength of the optical illumination.
Fekete
L
L
Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic.
Hlinka
J Y
JY
Kadlec
E
E
Kuzel
P
P
Mounaix
P
P