title: [Photoluminescence of nano-SiC annealed by pulse laser].
abstract: Nanocrystalline silicon carbon (nc-SiC) from amorphous silicon carbon films was obtained through XeCl excimer laser annealing. The photoluminescence (PL) of the nc-SiC was analyzed at different annealing laser energy density. It was observed that PL presented a wide luminescence band from 300-600 nm in the nc-SiC films. The two main luminescence bands, situated at 398 and 470 nm respectively, are attributed to band to band and defect recombination in the 6H-SiC based on the structure changes of the nc-SiC films. The relative PL intensity of these two bands was determined by the surface state density in the nc-SiC films and their irradiative life
authors.affiliation: College of Physics Science and Technology, Hebei University, Baoding 071002, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Yu
authors.forename: Jie
authors.initials: J
authors.lastname: He
authors.forename: Yun-tao
authors.initials: YT
authors.lastname: Sun
authors.forename: Li
authors.initials: L
authors.lastname: Han
authors.forename: Guang-sheng
authors.initials: GS
authors.lastname: Fu
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D007834:Lasers; D049449:Luminescence; D008163:Luminescent Measurements / Q000379:methods; D018625:Microscopy, Atomic Force; D053758:Nanoparticles / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry*; D013053:Spectrophotometry / Q000379:methods; D013499:Surface Properties
chemical_list: D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide