Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.
Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.
Sormunen
Jaakko
J
Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 TKK, Finland. jaakko.sormunen@hut.fi
Riikonen
Juha
J
Mattila
Marco
M
Tiilikainen
Jouni
J
Sopanen
Markku
M
Lipsanen
Harri
H
D001152:Arsenicals / Q000032:analysis / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D007204:Indium / Q000032:analysis / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D044367:Phase Transition; D010720:Phosphines / Q000032:analysis / Q000737:chemistry*; D045663:Quantum Dots
D001152:Arsenicals; D010720:Phosphines; D007204:Indium; C076773:indium arsenide; C090882:indium phosphide