[Photoluminescence of nano-SiC annealed by pulse laser].
Nanocrystalline silicon carbon (nc-SiC) from amorphous silicon carbon films was obtained through XeCl excimer laser annealing. The photoluminescence (PL) of the nc-SiC was analyzed at different annealing laser energy density. It was observed that PL presented a wide luminescence band from 300-600 nm in the nc-SiC films. The two main luminescence bands, situated at 398 and 470 nm respectively, are attributed to band to band and defect recombination in the 6H-SiC based on the structure changes of the nc-SiC films. The relative PL intensity of these two bands was determined by the surface state density in the nc-SiC films and their irradiative life
Yu
Wei
W
College of Physics Science and Technology, Hebei University, Baoding 071002, China.
He
Jie
J
Sun
Yun-tao
YT
Han
Li
L
Fu
Guang-sheng
GS
D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D007834:Lasers; D049449:Luminescence; D008163:Luminescent Measurements / Q000379:methods; D018625:Microscopy, Atomic Force; D053758:Nanoparticles / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry*; D013053:Spectrophotometry / Q000379:methods; D013499:Surface Properties
D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide