title: Active optical control of the terahertz reflectivity of high-resistivity semiconductors.
abstract: We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high-resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R <3%) and highly reflective (R >85%) limits by means of the intensity and wavelength of the optical illumination.
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic.
authors.forename: L
authors.initials: L
authors.lastname: Fekete
authors.forename: J Y
authors.initials: JY
authors.lastname: Hlinka
authors.forename: E
authors.initials: E
authors.lastname: Kadlec
authors.forename: P
authors.initials: P
authors.lastname: Kuzel
authors.forename: P
authors.initials: P
authors.lastname: Mounaix