title: Conducting AFM and 2D GIXD studies on pentacene thin films.
abstract: Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation between the crystalline structure of the initial submonolayer of a pentacene film and the mobility of the corresponding 60-nm-thick films showing terrace-like structure, as confirmed by 2D grazing-incidence X-ray diffraction and atomic force microscopy. Specifically, multilayered pentacene films, grown from single crystal-like faceted islands on HMDS-treated surface, have shown much higher charge mobility (mu = 3.4 +/- 0.5 cm2/Vs) than those with polycrystalline dendritic islands (mu = 0.5 +/- 0.15 cm2/Vs) on OTS-treated ones.
authors.affiliation: Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
authors.forename: Hoichang
authors.initials: H
authors.lastname: Yang
authors.forename: Tae Joo
authors.initials: TJ
authors.lastname: Shin
authors.forename: Mang-Mang
authors.initials: MM
authors.lastname: Ling
authors.forename: Kilwon
authors.initials: K
authors.lastname: Cho
authors.forename: Chang Y
authors.initials: CY
authors.lastname: Ryu
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao
mesh_terms: D003460:Crystallization; D008567:Membranes, Artificial; D018625:Microscopy, Atomic Force / Q000379:methods*; D017646:Organosilicon Compounds / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D014961:X-Ray Diffraction / Q000379:methods
chemical_list: D008567:Membranes, Artificial; D017646:Organosilicon Compounds; D012822:Silicon Dioxide