title: Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields.
abstract: Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent drift and/or diffusion is controlled with electric, magnetic, and--in particular--strain fields. Spin precession induced by controlled uniaxial stress along the <110> axes demonstrates the direct k-linear spin-orbit coupling of electron spin to the shear (off diagonal) components of the strain tensor, epsilon(xy).
authors.affiliation: Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
authors.forename: S A
authors.initials: SA
authors.lastname: Crooker
authors.forename: D L
authors.initials: DL
authors.lastname: Smith