Metal--semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation.
We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and metallic single-electron transistor characteristics at low temperatures, when exposed to an electron beam, exhibited ambipolar field effect transistor (room temperature) and single-electron transistor (low temperature) characteristics. This metal-semiconductor transition is attributed to inhomogeneous electric fields arising from charging during electron irradiation.
Vijayaraghavan
Aravind
A
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan, and Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA. vijaya@rpi.edu
Kanzaki
Kenichi
K
Suzuki
Saturo
S
Kobayashi
Yoshihiro
Y
Inokawa
Hiroshi
H
Ono
Yukinori
Y
Kar
Swastik
S
Ajayan
Pulickel M
PM
D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000379:methods*; D004583:Electrons; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008670:Metals / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects*; D011829:Radiation Dosage; D014173:Transistors, Electronic
D008670:Metals; D037742:Nanotubes, Carbon