Evidence of carbon-carbon bond formation on GaAs(100) via Fischer-Tropsch methylene insertion reaction mechanism.
Sequential multiple methylene (CH2) insertions into adsorbed methyl species on clean gallium-rich GaAs(100)-(4 x 1) occurs to form higher alkenes (ethene, propene, butene) and two higher alkyl iodides (iodoethane, iodopropane), not reported for a semiconductor surface previously.
Kemp
Neil T
NT
School of Chemistry, University of New South Wales, Sydney NSW 2052, Australia. nkemp@phys.unsw.edu.au
Singh
Nagindar K
NK