Water as buffer material for gold nanocluster growth.
Water molecules adsorbed on SiO2/Si(100) at 140 K to form amorphous solid water (ASW) layers were utilized as a buffer for assisting the growth of gold nanoclusters. It was shown that the average height and diameter of the clusters deposited on the silicon oxide substrate following the buffer annealing/desorption increase as the buffer layer becomes thicker and as more gold is deposited. The clusters' height and diameter were determined by tapping mode AFM and high-resolution SEM imaging, respectively. Typical heights were between 0.5 and 4.5 nm, and the diameters were in the range of 3-9 nm for ASW layer thickness of 7-100 ML and gold deposition in the range of 0.2-1.2 A. The density of the clusters decreased from 65 x 10(10) to 8 x 10(10) cm (-2) in the same buffer layer thickness range. Significantly different morphology of the clusters is obtained when compared to those formed by direct deposition of gold on the silicon oxide surface and to those grown on top of Xe as buffer material.
Gross
Elad
E
Department of Physical Chemistry and the Farkas Center for Light-Induced Processes, The Hebrew University of Jerusalem, Jerusalem 91904, Israel.
Horowitz
Yonatan
Y
Asscher
Micha
M
D000327:Adsorption; D002021:Buffers; D006046:Gold / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013499:Surface Properties; D013696:Temperature; D014867:Water / Q000737:chemistry; D014978:Xenon / Q000737:chemistry
D002021:Buffers; D014867:Water; D014978:Xenon; D006046:Gold; D012822:Silicon Dioxide; D012825:Silicon