[Influence of strain in the Si cap layer of Si/SiGe heterostructure on its Raman spectra].
Strained Si/SiGe heterostructure was prepared by high dose Ge ion implantation and a subsequent high temperature rapid thermal processing method. A 325 nm UV laser was used to analyze the Raman spectra of the strained Si cap layer. It was found that tensile strain in the Si cap layer can induce a shift toward lower frequency of the first order Raman scattering peak of 520 cm(-1). In light of the variation of peak position, a lateral tensile stress of 12.5 x 10(8) N x m(-2) in Si cap layer was worked out. However, the tensile strain in the Si cap layer can not lead to a variation of the sub-order Raman scattering peaks around 1 555 and 2 330 cm(-1).
Xiao
Qing-Hua
QH
General Research Institute for Non-Ferrous Metals, National Engineering Research Center for Semiconductor Materials, Beijing 100088, China.
Tu
Hai-Ling
HL
D000465:Algorithms; D003460:Crystallization; D005857:Germanium / Q000737:chemistry*; D008422:Materials Testing; D008956:Models, Chemical; D012825:Silicon / Q000737:chemistry*; D013059:Spectrum Analysis, Raman; D013314:Stress, Mechanical
D005857:Germanium; D012825:Silicon