title: Quantum-dot growth simulation on periodic stress of substrate.
abstract: InAs quantum dots (QDs) are grown on the cleaved edge of an In(x)Ga(1-x)AsGaAs supperlattice experimentally and a good linear alignment of these QDs on the surface of an In(x)Ga(1-x)As layer has been realized. The modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic Monte Carlo method. Our results show that a good alignment of QDs can be achieved when the strain energy reaches 2% of the atomic binding energy. The simulation results are in excellent qualitative agreement with our experiments.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China. czhao@red.semi.ac.cn
authors.forename: Chang
authors.initials: C
authors.lastname: Zhao
authors.forename: Y H
authors.initials: YH
authors.lastname: Chen
authors.forename: C X
authors.initials: CX
authors.lastname: Cui
authors.forename: B
authors.initials: B
authors.lastname: Xu
authors.forename: J
authors.initials: J
authors.lastname: Sun
authors.forename: W
authors.initials: W
authors.lastname: Lei
authors.forename: L K
authors.initials: LK
authors.lastname: Lu
authors.forename: Z G
authors.initials: ZG
authors.lastname: Wang