Tunable double quantum dots in InAs nanowires defined by local gate electrodes.
We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.
Fasth
Carina
C
Solid State Physics/the Nanometer Structure Consortium, Lund University, Box 118, S-221 00, Lund, Sweden.
Fuhrer
Andreas
A
Björk
Mikael T
MT
Samuelson
Lars
L
D001152:Arsenicals / Q000032:analysis / Q000737:chemistry*; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000032:analysis / Q000737:chemistry*; D008839:Microelectrodes; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D045663:Quantum Dots; D012666:Semiconductors
D001152:Arsenicals; D007204:Indium; C076773:indium arsenide