Spin-dependent tunneling in magnetic tunnel junctions with a layered antiferromagnetic Cr(001) spacer: role of band structure and interface scattering.
The tunnel magnetoresistance effect (TMR), which is intrinsically determined by the interface monolayer of an electrode, was realized by using magnetic tunnel junctions (MTJs) with a single-crystal Cr(001) layer inserted between a tunnel barrier and an electrode. The MTJs showed an oscillation of the TMR ratio as a function of the thickness of the Cr(001) layer with a period of 2 monatomic layers, which corresponds to the layered antiferromagnetic structure of Cr(001). These oscillations originate from electron scattering at the interface, due to the mismatching of the symmetry of the wave functions and band structure in Cr(001).
Nagahama
T
T
NanoElectronics Research Institute, AIST, Tsukuba Central 2 Umezono 1-1 Tsukuba Ibaraki 305-8568, Japan. taro-nagahama@aist.go.jp
Yuasa
S
S
Tamura
E
E
Suzuki
Y
Y