title: Optically bright quantum dots in single Nanowires.
abstract: We fabricate and demonstrate optically active quantum dots embedded in single nanowires. Observation of photon antibunching proves the zero dimensionality of these heterostructures that can be epitaxially grown on various substrates, including silicon. We show that the nanowire dots are intense single photon sources, typically an order of magnitude brighter than self-assembled quantum dots. Due to control over their composition, size, and position, nanowire dots are ideal building blocks for fully controlled quantum dot molecules.
authors.affiliation: Quantum Photonics Group, Institute of Quantum Electronics, ETH Hönggerberg HPT G10, CH 8093, Zürich, Switzerland. borgstrom@phys.ethz.ch
authors.forename: Magnus T
authors.initials: MT
authors.lastname: Borgström
authors.forename: Valery
authors.initials: V
authors.lastname: Zwiller
authors.forename: Elisabeth
authors.initials: E
authors.lastname: Müller
authors.forename: Atac
authors.initials: A
authors.lastname: Imamoglu
mesh_terms: D004559:Electric Wiring; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008163:Luminescent Measurements / Q000295:instrumentation* / Q000379:methods; D008422:Materials Testing; D043942:Nanotubes / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D055095:Optics and Photonics / Q000295:instrumentation*; D010777:Photochemistry / Q000295:instrumentation* / Q000379:methods; D045663:Quantum Dots