title: Field emission in doped nanotubes.
abstract: Doping into nanotubes is an attractive and significant way to tailor their electron transport and emission properties. This article reviews some recent experimental and theoretical advances in the studies of doping behaviors in carbon nanotubes and gallium nitrogen nanotubes, and doping effects on their field electron emission properties. The general theory for field emission mechanism of one-dimensional nanosystems is presented to provide an overall picture of the field emission process and doping behavior. Potential applications of doped nanotubes as diverse nanoscale emitters, microscopy probes, electronic guns and nanoelectronic devices are discussed.
authors.affiliation: Department of Physics, Tsinghua University, Beijing 100084, P R China.
authors.forename: Gang
authors.initials: G
authors.lastname: Zhou
authors.forename: Wenhui
authors.initials: W
authors.lastname: Duan
mesh_terms: D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D004559:Electric Wiring; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods*; D004574:Electromagnetic Fields; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation; D043942:Nanotubes / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties