Interface magnetization reversal and anisotropy in Fe/AlGaAs(001).
The reversal process of the Fe interface layer magnetization in Fe/AlGaAs heterostructures is measured directly using magnetization-induced second-harmonic generation, and is compared with the reversal of the bulk magnetization as obtained from magneto-optic Kerr effect. The switching characteristics are distinctly different due to interface-derived anisotropy--single step switching occurs at the interface layer, while two-jump switching occurs in the bulk Fe for the magnetic field orientations employed. The angle between the interface and bulk magnetization may be as large as 40-85 degrees. Such interface switching will dominate the behavior of nanoscale structures.
Zhao
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HB
Department of Applied Science, College of William & Mary, Williamsburg, Virginia, 23185, USA.
Talbayev
D
D
Lüpke
G
G
Hanbicki
A T
AT
Li
C H
CH
van't Erve
M J
MJ
Kioseoglou
G
G
Jonker
B T
BT