Ultrafast integrated semiconductor optical modulator based on the plasma-dispersion effect.
We demonstrate integrated semiconductor optical devices with ultrafast temporal responses based on the plasma-dispersion effect. The geometry of the devices removes the dependence of the modulation time on the free-carrier dynamics. We present the theoretical analysis of the performance of such devices. We show that a silicon-based device with a free-carrier lifetime of 1.4 ns can be modulated on a time scale of only 20 ps. The ultrafast operation is verified experimentally.
Almeida
Vilson R
VR
Centro Técnico Aeroespacial, São José dos Campos, São Paulo 12228, Brazil. vra2@cornell.edu
Xu
Qianfan
Q
Lipson
Michal
M