Single-frequency operation of a high-power, long-wavelength semiconductor disk laser.
An optically pumped, high-power, single-frequency semiconductor disk laser is demonstrated. A thin (50 microm) diamond bonded to an InGaAsP gain chip provides the combined functions of heat removal and spectral filtering, thus eliminating the need for the additional intracavity etalons that are usually employed for single-frequency operation. In a short cavity (4 mm) configuration we obtained a maximum output power of 470 mW at 0 degrees C and 170 mW at 20 degrees C in a near-diffraction-limited beam (M2 < 1.2). The emission wave-length was 1549 nm and the linewidth was less than 200 MHz.
Lindberg
Hans
H
Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Göteborg, Sweden.
Larsson
Anders
A
Strassner
Martin
M