title: Large phase shifts in As2S3 waveguides for all-optical processing devices.
abstract: A large phase shift of 4.7pi at 1.53 microm has been observed from a low-loss (0.2 dB/cm), small-core As2S3 waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As2S3 films at 1.53 microm, far below the material bandgap.
authors.affiliation: Centre for Ultra-high-bandwidth Devices for Optical Systems, Laser Physics Center, The Australian National University, Canberra, 0200, Australia. ylruan@yahoo.com
authors.forename: Yinlan
authors.initials: Y
authors.lastname: Ruan
authors.forename: Barry
authors.initials: B
authors.lastname: Luther-Davies
authors.forename: Weitang
authors.initials: W
authors.lastname: Li
authors.forename: Andrei
authors.initials: A
authors.lastname: Rode
authors.forename: Vesslin
authors.initials: V
authors.lastname: Kolev
authors.forename: Steve
authors.initials: S
authors.lastname: Madden