Magnetic-field-induced band-structure change in CeBiPt.
We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above approximately 25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology.
Kozlova
N
N
Institut für Festkörper- und Werkstoffforschung Dresden, D-01171 Dresden, Germany.
Hagel
J
J
Doerr
M
M
Wosnitza
J
J
Eckert
D
D
Müller
K-H
KH
Schultz
L
L
Opahle
I
I
Elgazzar
S
S
Richter
Manuel
M
Goll
G
G
von Löhneysen
H
H
Zwicknagl
G
G
Yoshino
T
T
Takabatake
T
T