Local structure of isolated positively charged muonium as an analog for the hydrogen ion in p-type GaAs.
We determine the local structure of isolated positively charged muonium (Mu+) in heavily doped p-type GaAs based on muon level crossing resonance and zero applied field muon spin depolarization data. These measurements provide the first direct experimental confirmation that Mu+, and by analogy H+, is located within a stretched Ga-As bond. The distances between Mu+ and the nearest neighbor Ga and As atoms are estimated to be 1.83 +/- 0.10 A; and 1.76 +/- 0.10 A, respectively. These results are compared to existing theoretical calculations on the structure of hydrogen in GaAs and additionally provide data on the induced electric field gradients.
Schultz
B E
BE
Department of Physics, University of Alberta, Edmonton, Canada T6G 2J1.
Chow
K H
KH
Hitti
B
B
Kiefl
R F
RF
Lichti
R L
RL
Cox
S F J
SF