title: Diamond-hexagonal semiconductor nanocones with controllable apex angle.
abstract: We report on the synthesis of nanostructured and crystalline tapered Si and Ge polyhedra via metal-catalyzed chemical vapor deposition. These Si and Ge nanocones (SiNCs, GeNCs) possess tips with near-atomic sharpness, micron-scaled bases, hexagonal cross-sections, and controllable apex angles. High-resolution transmission electron microscopy, selected-area electron diffraction and Raman scattering spectroscopy and analysis indicate that the SiNCs are of the diamond-hexagonal Si(IV) phase.
authors.affiliation: Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.
authors.forename: Linyou
authors.initials: L
authors.lastname: Cao
authors.forename: Lee
authors.initials: L
authors.lastname: Laim
authors.forename: Chaoying
authors.initials: C
authors.lastname: Ni
authors.forename: Bahram
authors.initials: B
authors.lastname: Nabet
authors.forename: Jonathan E
authors.initials: JE
authors.lastname: Spanier
mesh_terms: D006046:Gold / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D006046:Gold; D012825:Silicon