The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors.
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size. Here we present the first statistical analysis of this issue. We show that a large data set of more than 100 devices can be consistently accounted by a model that relates the on-current of a CNFET to a tunneling barrier whose height is determined by the nanotube diameter and the nature of the source/drain metal contacts. Our study permits identification of the desired combination of tube diameter and type of metal that provides the optimum performance of a CNFET.
Chen
Zhihong
Z
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Appenzeller
Joerg
J
Knoch
Joachim
J
Lin
Yu-ming
YM
Avouris
Phaedon
P
D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design / Q000379:methods; D019544:Equipment Failure Analysis / Q000379:methods; D008670:Metals / Q000032:analysis / Q000737:chemistry*; D008839:Microelectrodes; D008956:Models, Chemical; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000032:analysis / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
D008670:Metals; D037742:Nanotubes, Carbon