title: Interface magnetization reversal and anisotropy in Fe/AlGaAs(001).
abstract: The reversal process of the Fe interface layer magnetization in Fe/AlGaAs heterostructures is measured directly using magnetization-induced second-harmonic generation, and is compared with the reversal of the bulk magnetization as obtained from magneto-optic Kerr effect. The switching characteristics are distinctly different due to interface-derived anisotropy--single step switching occurs at the interface layer, while two-jump switching occurs in the bulk Fe for the magnetic field orientations employed. The angle between the interface and bulk magnetization may be as large as 40-85 degrees. Such interface switching will dominate the behavior of nanoscale structures.
authors.affiliation: Department of Applied Science, College of William & Mary, Williamsburg, Virginia, 23185, USA.
authors.forename: H B
authors.initials: HB
authors.lastname: Zhao
authors.forename: D
authors.initials: D
authors.lastname: Talbayev
authors.forename: G
authors.initials: G
authors.lastname: Lüpke
authors.forename: A T
authors.initials: AT
authors.lastname: Hanbicki
authors.forename: C H
authors.initials: CH
authors.lastname: Li
authors.forename: M J
authors.initials: MJ
authors.lastname: van't Erve
authors.forename: G
authors.initials: G
authors.lastname: Kioseoglou
authors.forename: B T
authors.initials: BT
authors.lastname: Jonker