Growth of crystalline rubrene films with enhanced stability.
The growth of well-oriented crystalline films of rubrene (C42H28) on SiO2 and Au111 substrates is achieved by employing "hot wall" deposition whereas organic molecular beam deposition (OMBD) only yields rather amorphous layers or poly-crystalline dendritic networks at elevated temperature. This pronounced difference in film growth is related to the conformational change of rubrene molecules involving a loss of chirality upon crystallization and the enhanced diffusion which becomes possible at high temperature and large vapor pressure. Moreover, it is demonstrated that the crystalline rubrene films reveal an enhanced thermal and chemical stability as compared to the OMBD grown films.
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Lehrstuhl für Physikalische Chemie I, Ruhr-Universität Bochum, 44780, Bochum, Germany.
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D003460:Crystallization / Q000379:methods*; D004058:Diffusion; D006046:Gold / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D015394:Molecular Structure; D036103:Nanotechnology / Q000379:methods*; D009279:Naphthacenes / Q000737:chemistry*; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry; D013499:Surface Properties; D013696:Temperature
D009279:Naphthacenes; C045049:rubrene; D006046:Gold; D012822:Silicon Dioxide