title: Gate-defined quantum dots on carbon nanotubes.
abstract: We report the realization of nanotube-based multiple quantum dots that are fully defined and controlled with electrostatic gates. Metallic top-gates are used to produce localized depletion regions in the underlying tubes; a pair of such depletion regions in a nanotube with ohmic contact electrodes defines the quantum dot. Top-gate voltages tune the transparencies of tunnel barriers as well as the electrostatic energies within single and multiple dots. This approach allows precise control over multiple devices on a single tube, and serves as a design paradigm for nanotube-based electronics and quantum systems.
authors.affiliation: Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
authors.forename: M J
authors.initials: MJ
authors.lastname: Biercuk
authors.forename: S
authors.initials: S
authors.lastname: Garaj
authors.forename: N
authors.initials: N
authors.lastname: Mason
authors.forename: J M
authors.initials: JM
authors.lastname: Chow
authors.forename: C M
authors.initials: CM
authors.lastname: Marcus
mesh_terms: D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods*; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D037742:Nanotubes, Carbon / Q000032:analysis / Q000737:chemistry*; D045663:Quantum Dots; D012666:Semiconductors; D055672:Static Electricity
chemical_list: D037742:Nanotubes, Carbon