title: Local structure of isolated positively charged muonium as an analog for the hydrogen ion in p-type GaAs.
abstract: We determine the local structure of isolated positively charged muonium (Mu+) in heavily doped p-type GaAs based on muon level crossing resonance and zero applied field muon spin depolarization data. These measurements provide the first direct experimental confirmation that Mu+, and by analogy H+, is located within a stretched Ga-As bond. The distances between Mu+ and the nearest neighbor Ga and As atoms are estimated to be 1.83 +/- 0.10 A; and 1.76 +/- 0.10 A, respectively. These results are compared to existing theoretical calculations on the structure of hydrogen in GaAs and additionally provide data on the induced electric field gradients.
authors.affiliation: Department of Physics, University of Alberta, Edmonton, Canada T6G 2J1.
authors.forename: B E
authors.initials: BE
authors.lastname: Schultz
authors.forename: K H
authors.initials: KH
authors.lastname: Chow
authors.forename: B
authors.initials: B
authors.lastname: Hitti
authors.forename: R F
authors.initials: RF
authors.lastname: Kiefl
authors.forename: R L
authors.initials: RL
authors.lastname: Lichti
authors.forename: S F J
authors.initials: SF
authors.lastname: Cox