Diamond-hexagonal semiconductor nanocones with controllable apex angle.
We report on the synthesis of nanostructured and crystalline tapered Si and Ge polyhedra via metal-catalyzed chemical vapor deposition. These Si and Ge nanocones (SiNCs, GeNCs) possess tips with near-atomic sharpness, micron-scaled bases, hexagonal cross-sections, and controllable apex angles. High-resolution transmission electron microscopy, selected-area electron diffraction and Raman scattering spectroscopy and analysis indicate that the SiNCs are of the diamond-hexagonal Si(IV) phase.
Cao
Linyou
L
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.
Laim
Lee
L
Ni
Chaoying
C
Nabet
Bahram
B
Spanier
Jonathan E
JE
D006046:Gold / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
D006046:Gold; D012825:Silicon