[Preparation of anodic Al2O3 films on SiO2 substrate and their photoluminescence properties].
300 nm thick aluminum films were deposited on SiO2 substrates by heat evaporation. At 0 degrees C, 40 V DC voltage, the authors successfully prepared high density Al2O3 films by anodic oxidation on SiO2 substrates with 15 wt% H2SO4 as electrolyte, and AFM was employed to study the film surface morphology. At room temperature the authors measured the photoluminescence spectrum of Al2O3 films prepared at different anodic voltages excited by Xe lamp. In addition, the authors monitored their excitation spectra of different emission peaks, and the authors found that the relative emission intensity gets weaker and shifts to lower energy at higher anodic voltage. At 40 V anodic voltage the authors observed new 356 nm ultraviolet emission, which has the same 210 nm excitation emission. Based on the discussion of the relative intensity of the PL spectra of anodic alumina at different voltages, the authors suggest that F and F+ oxygen vacancy defects were responsible for the observed 356 and 386 nm ultraviolet photoluminescence from Al2O3 anodic film at 40 V voltage.
Xiong
De-ping
DP
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Zhang
Xi-qing
XQ
Lin
Peng
P
Wang
Li
L
D000537:Aluminum Oxide / Q000737:chemistry; D055664:Electrochemical Techniques / Q000295:instrumentation / Q000379:methods; D004566:Electrodes; D049449:Luminescence; D008163:Luminescent Measurements / Q000295:instrumentation / Q000379:methods; D008567:Membranes, Artificial; D018625:Microscopy, Atomic Force; D012822:Silicon Dioxide / Q000737:chemistry*; D013050:Spectrometry, Fluorescence; D013499:Surface Properties
D008567:Membranes, Artificial; D012822:Silicon Dioxide; D000537:Aluminum Oxide