Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates.
We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithically integrating these devices yields complementary logic gates. The organic multilayers provide exceptionally good gate dielectrics for these systems and allow for low voltage, low hysteresis operation. The excellent performance characteristics suggest that organic dielectrics of this general type could provide a promising path to SWNT-based thin film electronics.
Hur
Seung-Hyun
SH
Department of Materials and Science Engineering, Chemistry, Beckman Institute, University of Illinois, Urbana, Illinois 61801, USA.
Yoon
Myung-Han
MH
Gaur
Anshu
A
Shim
Moonsub
M
Facchetti
Antonio
A
Marks
Tobin J
TJ
Rogers
John A
JA
D018360:Crystallography, X-Ray; D004560:Electricity; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D008567:Membranes, Artificial; D008958:Models, Molecular; D015394:Molecular Structure; D049329:Nanostructures / Q000737:chemistry*; D037742:Nanotubes, Carbon / Q000737:chemistry*; D017646:Organosilicon Compounds / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties; D014173:Transistors, Electronic
D008567:Membranes, Artificial; D037742:Nanotubes, Carbon; D017646:Organosilicon Compounds