Polarity switching and transient responses in single nanotube nanofluidic transistors.
We report the integration of inorganic nanotubes into metal-oxide-solution field effect transistors (FETs) which exhibit rapid field effect modulation of ionic conductance. Surface functionalization, analogous to doping in semiconductors, can switch the nanofluidic transistors from p-type to ambipolar and n-type field effect transistors. Transient study reveals the kinetics of field effect modulation is controlled by ion-exchange step. Nanofluidic FETs have potential implications in subfemtoliter analytical technology and large-scale nanofluidic integration.
Fan
Rong
R
Department of Chemistry, University of California, Berkeley, California 94720, USA.
Yue
Min
M
Karnik
Rohit
R
Majumdar
Arun
A
Yang
Peidong
P
D004553:Electric Conductivity; D008670:Metals / Q000737:chemistry; D046210:Microfluidic Analytical Techniques / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D012666:Semiconductors; D012822:Silicon Dioxide; D055672:Static Electricity
D008670:Metals; D010087:Oxides; D012822:Silicon Dioxide