Growth and optical properties of strained GaAs-GaxIn 1-x P core-shell nanowires.
We have synthesized GaAs-Ga(x)In(1-x)P (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.
Sköld
Niklas
N
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.
Karlsson
Lisa S
LS
Larsson
Magnus W
MW
Pistol
Mats-Erik
ME
Seifert
Werner
W
Trägårdh
Johanna
J
Samuelson
Lars
L