title: Epitaxial heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires.
abstract: Epitaxial semiconducting heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires were grown via a simple two-stage thermal evaporation of mixed SiO and ZnS or SiO and ZnSe powders under a precise temperature control. Each nanowire had a uniform diameter of 40-120 nm and length ranging from several to several tens of micrometers. Subnanowires of Si, ZnS, and ZnSe within them had a diameter of 20-50, 40-60, and 20-50 nm, respectively. The optical property (nanoscale cathodoluminescence) was also investigated from these new structures. It is proposed that the Si nanowires formed through disproportionation of SiO to Si in the first evaporation stage and then served as one-dimensional nanoscale substrates (or templates) for an epitaxial growth of ZnS or ZnSe nanowires in the following thermal evaporation of ZnS or ZnSe powders. The present results suggest that the simple method might be useful for the synthesis of many other heterostructures containing Si and II-VI or III-V semiconducting composite nanowires to meet the growing demands of nanoscale science and technology.
authors.affiliation: Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. HU.Junqing@nims.go.jp
authors.forename: Junqing
authors.initials: J
authors.lastname: Hu
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
authors.forename: Zongwen
authors.initials: Z
authors.lastname: Liu
authors.forename: Takashi
authors.initials: T
authors.lastname: Sekiguchi
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg
authors.forename: Jinhua
authors.initials: J
authors.lastname: Zhan