title: Measurement of crystal thickness and orientation from selected-area Fourier transformation of a high-resolution electron hologram.
abstract: Precise knowledge of crystal thickness and orientation is critical for reliable interpretation of high-resolution transmission electron micrographs. In this paper, we propose a criterion of S(2)(T, u, v), which measures the crystal thickness by intensity matching of the selected-area Fourier transform of experimental holograms with the calculated electron diffraction pattern at a series of trial thicknesses (T) and crystal tilts (u, v). This criterion has been demonstrated successfully for local thickness determination from a simulated high-resolution image of a wedge-shaped YBa(2)Cu(3)O(7-delta) and from an experimental hologram of a Si crystal.
authors.affiliation: Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, USA. kxd44@cwru.edu
authors.forename: K
authors.initials: K
authors.lastname: Du
authors.forename: Y M
authors.initials: YM
authors.lastname: Wang
authors.forename: H
authors.initials: H
authors.lastname: Lichte
authors.forename: H Q
authors.initials: HQ
authors.lastname: Ye
mesh_terms: D003460:Crystallization; D005583:Fourier Analysis; D007091:Image Processing, Computer-Assisted; D046529:Microscopy, Electron, Transmission / Q000379:methods*