Theory of spin hall conductivity in n-doped GaAs.
We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al. [Science 306, 1910 (2004)].
Engel
Hans-Andreas
HA
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
Halperin
Bertrand I
BI
Rashba
Emmanuel I
EI