Measurement of crystal thickness and orientation from selected-area Fourier transformation of a high-resolution electron hologram.
Precise knowledge of crystal thickness and orientation is critical for reliable interpretation of high-resolution transmission electron micrographs. In this paper, we propose a criterion of S(2)(T, u, v), which measures the crystal thickness by intensity matching of the selected-area Fourier transform of experimental holograms with the calculated electron diffraction pattern at a series of trial thicknesses (T) and crystal tilts (u, v). This criterion has been demonstrated successfully for local thickness determination from a simulated high-resolution image of a wedge-shaped YBa(2)Cu(3)O(7-delta) and from an experimental hologram of a Si crystal.
Du
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Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, USA. kxd44@cwru.edu
Wang
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Lichte
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Ye
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D003460:Crystallization; D005583:Fourier Analysis; D007091:Image Processing, Computer-Assisted; D046529:Microscopy, Electron, Transmission / Q000379:methods*