title: Sawtooth faceting in silicon nanowires.
abstract: We observe in situ the vapor-liquid-solid (VLS) growth of Si nanowires, in UHV-CVD using Au catalyst. The nanowire sidewalls exhibit periodic sawtooth faceting, reflecting an oscillatory growth process. We interpret the facet alternation as resulting from the interplay of the geometry and surface energies of the wire and liquid droplet. Such faceting may be present in any VLS growth system in which there are no stable orientations parallel to the growth direction. The sawtooth structure has important implications for electronic mobility and scattering in nanowire devices.
authors.affiliation: IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA. fmross@us.ibm.com
authors.forename: F M
authors.initials: FM
authors.lastname: Ross
authors.forename: J
authors.initials: J
authors.lastname: Tersoff
authors.forename: M C
authors.initials: MC
authors.lastname: Reuter