title: Growth and optical properties of strained GaAs-GaxIn 1-x P core-shell nanowires.
abstract: We have synthesized GaAs-Ga(x)In(1-x)P (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.
authors.affiliation: Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.
authors.forename: Niklas
authors.initials: N
authors.lastname: Sköld
authors.forename: Lisa S
authors.initials: LS
authors.lastname: Karlsson
authors.forename: Magnus W
authors.initials: MW
authors.lastname: Larsson
authors.forename: Mats-Erik
authors.initials: ME
authors.lastname: Pistol
authors.forename: Werner
authors.initials: W
authors.lastname: Seifert
authors.forename: Johanna
authors.initials: J
authors.lastname: Trägårdh
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson