title: n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups.
abstract: Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5'-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate.
authors.affiliation: Department of Electronic Chemistry, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8502, Japan.
authors.forename: Shinji
authors.initials: S
authors.lastname: Ando
authors.forename: Ryo
authors.initials: R
authors.lastname: Murakami
authors.forename: Jun-ichi
authors.initials: J
authors.lastname: Nishida
authors.forename: Hirokazu
authors.initials: H
authors.lastname: Tada
authors.forename: Youji
authors.initials: Y
authors.lastname: Inoue
authors.forename: Shizuo
authors.initials: S
authors.lastname: Tokito
authors.forename: Yoshiro
authors.initials: Y
authors.lastname: Yamashita