title: Mode-locked laser diode with an ultrafast integrated uni-traveling carrier saturable absorber.
abstract: A novel two-section integrated mode-locked laser diode (MLLD) with a separate ultrafast uni-traveling carrier (UTC) saturable absorber section and semiconductor optical amplifier gain section is demonstrated. The UTC absorber is composed of a thin p-InGaAsP absorbing layer and an intrinsic InGaAsP collecting layer. By confining the photoexcitation process to the thin highly doped absorbing layer, the diffusion-limited hole extraction process is greatly enhanced. The investigated MLLD produces 600 fs uncompressed optical pulses at a 42 GHz repetition rate.
authors.affiliation: Electronics Laboratory (IfE), Swiss Federal Institute of Technology (ETH Zürich), Zürich, Switzerland. scollo@ife.ee.ethz.ch
authors.forename: R
authors.initials: R
authors.lastname: Scollo
authors.forename: H J
authors.initials: HJ
authors.lastname: Lohe
authors.forename: J F
authors.initials: JF
authors.lastname: Holzman
authors.forename: F
authors.initials: F
authors.lastname: Robin
authors.forename: H
authors.initials: H
authors.lastname: Jäckel
authors.forename: D
authors.initials: D
authors.lastname: Erni
authors.forename: W
authors.initials: W
authors.lastname: Vogt
authors.forename: E
authors.initials: E
authors.lastname: Gini