title: Bistability in a complementary metal oxide semiconductor inverter circuit.
abstract: Radiofrequency signals can disrupt the operation of low frequency circuits. A digital inverter circuit would seem to be immune to such disruption, because its output state usually jumps abruptly between 0 and 5 V. Nevertheless, when driven with a high frequency signal, the inverter can have two coexisting stable states (which are not at 0 and 5 V). Slow switching between these states (by changing the rf signal) will produce a low frequency signal. I demonstrate the bistability in a circuit experiment and in a simple model of the circuit.
authors.affiliation: Code 6362, US Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA. thomas.l.carroll@nrl.navy.mil
authors.forename: Thomas L
authors.initials: TL
authors.lastname: Carroll
mesh_terms: D016477:Artifacts; D003198:Computer Simulation; D004574:Electromagnetic Fields; D008670:Metals / Q000737:chemistry* / Q000528:radiation effects; D008962:Models, Theoretical; D017711:Nonlinear Dynamics; D009991:Oscillometry / Q000379:methods*; D010087:Oxides / Q000737:chemistry* / Q000528:radiation effects; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
chemical_list: D008670:Metals; D010087:Oxides