title: Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts.
abstract: This paper reports the surface morphology and I-V curves of porous silicon (PS) samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias (10 V or 3 V) for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the Al/PS interface and PS matrix morphology.
authors.affiliation: State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China. zhaoyue1976@sohu.com
authors.forename: Yue
authors.initials: Y
authors.lastname: Zhao
authors.forename: Dong-sheng
authors.initials: DS
authors.lastname: Li
authors.forename: Shou-xiang
authors.initials: SX
authors.lastname: Xing
authors.forename: De-ren
authors.initials: DR
authors.lastname: Yang
authors.forename: Min-hua
authors.initials: MH
authors.lastname: Jiang
mesh_terms: D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods*; D004566:Electrodes; D004574:Electromagnetic Fields; D006046:Gold / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D016062:Porosity; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D006046:Gold; D012825:Silicon