title: Sol-gel synthesis of luminescent InP nanocrystals embedded in silica glasses.
abstract: III-V semiconductor nanocrystals rarely exist as spherical inclusions inside glasses, due to difficulties during their preparation, such as high toxic reagents or fast oxidation under usual glass technology temperatures. In this letter a sol-gel method for synthesis of InP nanocrystals embedded in silica glasses was described. Gels were synthesized by hydrolysis of a complex solution of Si(OC2H5)4, InCl3.4H2O, and PO(OC2H5)3. Then, the gels were heated at 600 degrees C in the presence of H2 gas to form fine cubic InP crystallites. Raman spectrum showed an InP longitudinal-optic mode (342 cm(-1)) and a transverse-optic mode (303 cm(-1)). The size of InP nanocrystals was found to be from 2 to 8 nm in diameter by transmission electron microscopy. A strong photoluminescence with a peak at 856 nm was observed from InP nanocrystals embedded in silica glasses. The results suggest that it might be possible to synthesize other III-V semiconductor nanocrystals embedded in silica glasses through the sol-gel process.
authors.affiliation: School of Chemistry and Materials Science, Shaanxi Normal University, Xi'an, P R China.
authors.forename: Heqing
authors.initials: H
authors.lastname: Yang
authors.forename: Daming
authors.initials: D
authors.lastname: Huang
authors.forename: Xingjun
authors.initials: X
authors.lastname: Wang
authors.forename: Xiaoxiao
authors.initials: X
authors.lastname: Gu
authors.forename: Fujian
authors.initials: F
authors.lastname: Wang
authors.forename: Songhai
authors.initials: S
authors.lastname: Xie
authors.forename: Xi
authors.initials: X
authors.lastname: Yao
mesh_terms: D000327:Adsorption; D003460:Crystallization / Q000379:methods*; D005782:Gels / Q000737:chemistry; D005898:Glass / Q000737:chemistry; D007204:Indium / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D049408:Luminescent Agents / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D049329:Nanostructures / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D044367:Phase Transition; D010720:Phosphines / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects; D010777:Photochemistry / Q000379:methods; D045663:Quantum Dots; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D005782:Gels; D049408:Luminescent Agents; D010720:Phosphines; D007204:Indium; D012822:Silicon Dioxide; C090882:indium phosphide