title: Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber.
abstract: Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 microm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.
authors.affiliation: Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden. hans.lindberg@mc2.chalmers.se
authors.forename: Hans
authors.initials: H
authors.lastname: Lindberg
authors.forename: Mahdad
authors.initials: M
authors.lastname: Sadeghi
authors.forename: Mathias
authors.initials: M
authors.lastname: Westlund
authors.forename: Shumin
authors.initials: S
authors.lastname: Wang
authors.forename: Anders
authors.initials: A
authors.lastname: Larsson
authors.forename: Martin
authors.initials: M
authors.lastname: Strassner
authors.forename: Saulius
authors.initials: S
authors.lastname: Marcinkevicius