Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber.
Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 microm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.
Lindberg
Hans
H
Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden. hans.lindberg@mc2.chalmers.se
Sadeghi
Mahdad
M
Westlund
Mathias
M
Wang
Shumin
S
Larsson
Anders
A
Strassner
Martin
M
Marcinkevicius
Saulius
S