title: Fabrication of a one-dimensional array of nanopores horizontally aligned on a Si substrate.
abstract: A one-dimensional array of nanopores horizontally aligned on a silicon substrate was successfully fabricated by anodic aluminum oxidation (AAO) using a modified two-step procedure. SEM pictures show clear nanostructures of well-aligned one-dimensional nanopore arrays without cracks at the interfaces of the sandwiched structures. The processes are compatible with the planar silicon integrated circuit processing technology, promising for applications in nanoelectronics. The formation mechanism of a single nanopore array on Si substrates was also discussed.
authors.affiliation: Department of Electrical and Computer Engineering and Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, KY 40506, USA.
authors.forename: Hongguo
authors.initials: H
authors.lastname: Zhang
authors.forename: Zhi
authors.initials: Z
authors.lastname: Chen
authors.forename: Tianxiang
authors.initials: T
authors.lastname: Li
authors.forename: Kozo
authors.initials: K
authors.lastname: Saito
mesh_terms: D000537:Aluminum Oxide / Q000032:analysis / Q000737:chemistry*; D016880:Anisotropy; D003460:Crystallization / Q000379:methods*; D004595:Electroplating / Q000379:methods*; D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D016062:Porosity; D012825:Silicon / Q000032:analysis / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D008567:Membranes, Artificial; D000537:Aluminum Oxide; D012825:Silicon