Interface and gate bias dependence responses of sensing organic thin-film transistors.
The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.
Tanese
Maria Cristina
MC
Dipartimento di Chimica and Centro di Eccellenza TIRES, Università degli Studi di Bari, 4 via Orabona, 70126 Bari, Italy.
Fine
Daniel
D
Dodabalapur
Ananth
A
Torsi
Luisa
L
D000669:Amplifiers, Electronic; D016477:Artifacts; D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D009930:Organic Chemicals / Q000032:analysis* / Q000737:chemistry*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014173:Transistors, Electronic
D008567:Membranes, Artificial; D009930:Organic Chemicals