title: Interface and gate bias dependence responses of sensing organic thin-film transistors.
abstract: The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.
authors.affiliation: Dipartimento di Chimica and Centro di Eccellenza TIRES, Università degli Studi di Bari, 4 via Orabona, 70126 Bari, Italy.
authors.forename: Maria Cristina
authors.initials: MC
authors.lastname: Tanese
authors.forename: Daniel
authors.initials: D
authors.lastname: Fine
authors.forename: Ananth
authors.initials: A
authors.lastname: Dodabalapur
authors.forename: Luisa
authors.initials: L
authors.lastname: Torsi
mesh_terms: D000669:Amplifiers, Electronic; D016477:Artifacts; D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D009930:Organic Chemicals / Q000032:analysis* / Q000737:chemistry*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014173:Transistors, Electronic
chemical_list: D008567:Membranes, Artificial; D009930:Organic Chemicals