Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts.
This paper reports the surface morphology and I-V curves of porous silicon (PS) samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias (10 V or 3 V) for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the Al/PS interface and PS matrix morphology.
Zhao
Yue
Y
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China. zhaoyue1976@sohu.com
Li
Dong-sheng
DS
Xing
Shou-xiang
SX
Yang
De-ren
DR
Jiang
Min-hua
MH
D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods*; D004566:Electrodes; D004574:Electromagnetic Fields; D006046:Gold / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D016062:Porosity; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D006046:Gold; D012825:Silicon