Short-time behavior of mixed diffusion-barrier controlled adsorption.
This paper focuses on the short-time adsorption kinetics of nonionic surfactants onto water/air surfaces, analyzed in the context of the mixed diffusion-barrier controlled adsorption modeling framework. Specifically, we reconcile the apparent contradiction between theoretical prediction and experimental observations on the adsorption kinetics mechanism at short times: while the mixed diffusion-barrier controlled model predicts a barrier-controlled adsorption, as well as the impossibility of a diffusion-controlled adsorption at asymptotic short times, the short-time experimental dynamic surface tension (DST) behavior of many nonionic surfactants has been interpreted to result from diffusion-controlled adsorption at asymptotic short times. This is because the short-time experimental DST of these surfactants displays a t variation, which is considered as a fingerprint for the existence of diffusion-controlled adsorption, based on the short-time asymptotic behavior of the diffusion-controlled adsorption model. As a result of this interpretation, the fundamental physical nature of the energy barrier has been proposed to be associated with high surfactant surface concentrations. In this paper, we derive a new nonasymptotic short-time formalism of the mixed diffusion-barrier controlled model to describe surfactant adsorption onto a spherical pendant-bubble surface, including determining the ranges of time and surfactant surface concentration values where the short-time formalism is applicable. Based on this formalism, we find that one can expect to observe an apparent t variation of the DST at short times even for the mixed diffusion-barrier controlled adsorption model. We analyze the consequence of this finding by re-evaluating the existing notions of the energy barrier. We conclude that the energy barrier is associated with the adsorption of a single surfactant molecule onto a clean surface.
Moorkanikkara
Srinivas Nageswaran
SN
Department of Chemical Engineering, Room 66-444, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA.
Blankschtein
Daniel
D