Mode-locked laser diode with an ultrafast integrated uni-traveling carrier saturable absorber.
A novel two-section integrated mode-locked laser diode (MLLD) with a separate ultrafast uni-traveling carrier (UTC) saturable absorber section and semiconductor optical amplifier gain section is demonstrated. The UTC absorber is composed of a thin p-InGaAsP absorbing layer and an intrinsic InGaAsP collecting layer. By confining the photoexcitation process to the thin highly doped absorbing layer, the diffusion-limited hole extraction process is greatly enhanced. The investigated MLLD produces 600 fs uncompressed optical pulses at a 42 GHz repetition rate.
Scollo
R
R
Electronics Laboratory (IfE), Swiss Federal Institute of Technology (ETH Zürich), Zürich, Switzerland. scollo@ife.ee.ethz.ch
Lohe
H J
HJ
Holzman
J F
JF
Robin
F
F
Jäckel
H
H
Erni
D
D
Vogt
W
W
Gini
E
E