title: Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties.
abstract: Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
authors.forename: Jr H
authors.initials: JH
authors.lastname: He
authors.forename: Chang S
authors.initials: CS
authors.lastname: Lao
authors.forename: Lih J
authors.initials: LJ
authors.lastname: Chen
authors.forename: Dragomir
authors.initials: D
authors.lastname: Davidovic
authors.forename: Zhong L
authors.initials: ZL
authors.lastname: Wang