title: Influence of thermal annealing and ultraviolet light irradiation on LaF3 thin films at 193 nm.
abstract: Lanthanum fluoride (LaF3) thin films were prepared by resistive heating evaporation and electron-beam gun evaporation under the same deposition rate, deposition substrate temperature, and vacuum pressure. The coated LaF3 films were then treated by heat annealing and UV light irradiation. The optical properties, microstructures, stress, and laser-induced damage threshold (LIDT) at a wavelength of 193 nm were investigated. The surface roughness, optical loss, stress, and LIDT of the films were improved after the annealing. The films had better properties when irradiated by UV light as compared with heat annealing.
authors.affiliation: Thin Film Technology Center, National Central University, Chung-Li 320, Taiwan. cclee@ios.ncu.edu.tw
authors.forename: Cheng-Chung
authors.initials: CC
authors.lastname: Lee
authors.forename: Ming-Chung
authors.initials: MC
authors.lastname: Liu
authors.forename: Masaaki
authors.initials: M
authors.lastname: Kaneko
authors.forename: Kazuhide
authors.initials: K
authors.lastname: Nakahira
authors.forename: Yuuichi
authors.initials: Y
authors.lastname: Takano