Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties.
Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.
He
Jr H
JH
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
Lao
Chang S
CS
Chen
Lih J
LJ
Davidovic
Dragomir
D
Wang
Zhong L
ZL