Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots.
Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains.
Moskalenko
Evgenii S
ES
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
Karlsson
Fredrik K
FK
Donchev
Vesselin T
VT
Holtz
Per Olof
PO
Monemar
Bo
B
Schoenfeld
Winston V
WV
Petroff
Pierre M
PM