title: MOSFET dosimeter depth-dose measurements in heterogeneous tissue-equivalent phantoms at diagnostic x-ray energies.
abstract: The objective of the present study was to explore the use of the TN-1002RD metal-oxide-semiconductor field effect transistor (MOSFET) dosimeter for measuring tissue depth dose at diagnostic photon energies in both homogeneous and heterogeneous tissue-equivalent materials. Three cylindrical phantoms were constructed and utilized as a prelude to more complex measurements within tomographic physical phantoms of pediatric patients. Each cylindrical phantom was constructed as a stack of seven 5-cm-diameter and 1-cm-thick discs of materials radiographically representative of either soft tissue (S), bone (B), or lung tissue (L) at diagnostic photon energies. In addition to a homogeneous phantom of soft tissue (SSSSSSS), two heterogeneous phantoms were constructed: SSBBSSS and SBLLBSS. MOSFET dosimeters were then positioned at the interface of each disc, and the phantoms were then irradiated at 66 kVp and 200 mAs. Measured values of absorbed dose at depth were then compared to predicated values of point tissue dose as determined via Monte Carlo radiation transport modeling. At depths exceeding 2 cm, experimental results matched the computed values of dose with high accuracy regardless of the dosimeter orientation (epoxy bubble facing toward or away from the x-ray beam). Discrepancies were noted, however, between measured and calculated point doses near the surface of the phantom (surface to 2 cm depth) when the dosimeters were oriented with the epoxy bubble facing the x-ray beam. These discrepancies were largely eliminated when the dosimeters were placed with the flat side facing the x-ray beam. It is therefore recommended that the MOSFET dosimeters be oriented with their flat sides facing the beam when they are used at shallow depths or on the surface of either phantoms or patients.
authors.affiliation: Department of Nuclear and Radiological Engineering, University of Florida, Gainesville, Florida 32611-8300, USA.
authors.forename: A K
authors.initials: AK
authors.lastname: Jones
authors.forename: F D
authors.initials: FD
authors.lastname: Pazik
authors.forename: D E
authors.initials: DE
authors.lastname: Hintenlang
authors.forename: W E
authors.initials: WE
authors.lastname: Bolch
mesh_terms: D002648:Child; D004307:Dose-Response Relationship, Radiation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006801:Humans; D019047:Phantoms, Imaging; D011829:Radiation Dosage; D011859:Radiography / Q000295:instrumentation*; D011874:Radiometry / Q000295:instrumentation* / Q000379:methods; D014173:Transistors, Electronic