title: Multilayer silicon cavity mirrors for the far-infrared p-Ge laser.
abstract: Multilayer mirrors capable of > 99.9% reflectivity in the far infrared (70-200 microm wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 omega cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 arc sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered.
authors.affiliation: Department of Physics, University of Central Florida, Orlando, Florida 32816, USA.
authors.forename: Todd W
authors.initials: TW
authors.lastname: Du Bosq
authors.forename: Andrey V
authors.initials: AV
authors.lastname: Muravjov
authors.forename: Robert E
authors.initials: RE
authors.lastname: Peale
authors.forename: Christopher J
authors.initials: CJ
authors.lastname: Fredricksen