Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy.
Because of their importance in fundamental research and possible applications in nanotechnology and nanoelectronics, semiconductor nanowires have attracted much interest. In addition to the growth itself, the control of the size and location is an essential problem. Here we show the growth of ordered arrays of vertically aligned silicon nanowires by molecular beam epitaxy using prepatterned arrays of gold droplets on Si(111) substrates. The ordered arrays of gold particles were produced by nanosphere lithography.
Fuhrmann
Bodo
B
Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität, Hoher Weg 8, D-06120 Halle, Germany. bodo.fuhrman@cmat.uni-halle.de
Leipner
Hartmut S
HS
Höche
Hans-Reiner
HR
Schubert
Luise
L
Werner
Peter
P
Gösele
Ulrich
U
D003460:Crystallization / Q000379:methods*; D006046:Gold / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D011137:Polystyrenes / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D011137:Polystyrenes; D006046:Gold; D012825:Silicon