title: Low temperature growth of boron nitride nanotubes on substrates.
abstract: High growth temperatures (>1100 degrees C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 degrees C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.
authors.affiliation: Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931, USA.
authors.forename: Jiesheng
authors.initials: J
authors.lastname: Wang
authors.forename: Vijaya K
authors.initials: VK
authors.lastname: Kayastha
authors.forename: Yoke Khin
authors.initials: YK
authors.lastname: Yap
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.forename: Jia G
authors.initials: JG
authors.lastname: Lu
authors.forename: Zhengwei
authors.initials: Z
authors.lastname: Pan
authors.forename: Ilia N
authors.initials: IN
authors.lastname: Ivanov
authors.forename: Alex A
authors.initials: AA
authors.lastname: Puretzky
authors.forename: David B
authors.initials: DB
authors.lastname: Geohegan
mesh_terms: D000327:Adsorption; D001896:Boron Compounds / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000379:methods*; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013696:Temperature
chemical_list: D001896:Boron Compounds; C017282:boron nitride