title: Sol-gel template synthesis and photoluminescence of n- and p-type semiconductor oxide nanowires.
abstract: A sol-gel template technique has been put forward to synthesize single-crystalline semiconductor oxide nanowires, such as n-type SnO2 and p-type NiO. Scanning electron microscopy and transmission electron microscopy observations show that the oxide nanowires are single-crystal with average diameters in the range of 100-300 nm and lengths of over 10 microm. Photoluminescence (PL) spectra show a PL emission peak at 401 nm for n-type semiconductor SnO2, and a PL emission at 407 nm for p-type semiconductor NiO nanowires, respectively. Correspondingly, the observed violet-light emission at room temperature is attributed to near-band-edge emission for SnO2 nanowires and the 3d(7)4s-->3d8 transition of Ni2+ for NiO nanowires.
authors.affiliation: Department of Chemistry, Tsinghua University, Beijing 100084 (China). hqcao@mail.tsinghua.edu.cn
authors.forename: Huaqiang
authors.initials: H
authors.lastname: Cao
authors.forename: Xianqing
authors.initials: X
authors.lastname: Qiu
authors.forename: Yu
authors.initials: Y
authors.lastname: Liang
authors.forename: Lei
authors.initials: L
authors.lastname: Zhang
authors.forename: Meijuan
authors.initials: M
authors.lastname: Zhao
authors.forename: Qiming
authors.initials: Q
authors.lastname: Zhu