Additive soft-lithographic patterning of submicrometer- and nanometer-scale large-area resists on electronic materials.
We describe a novel soft-lithographic technique possessing broad utility for the fabrication of large area, nanoscale ( approximately 100 nm) multilayer resist structures on electronic material substrates. This additive patterning method transfers ultrathin poly(dimethylsiloxane) (PDMS) decals to an underlying SiO(2)-capped organic planarazation layer. The PDMS patterns serve as a latent image through which high-quality multilayer resist structures can be developed using reactive ion-beam etching.
Ahn
Heejoon
H
Department of Chemistry, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.
Lee
Keon Jae
KJ
Shim
Anne
A
Rogers
John A
JA
Nuzzo
Ralph G
RG
D003460:Crystallization / Q000379:methods*; D004129:Dimethylpolysiloxanes / Q000737:chemistry*; D004581:Electronics; D008567:Membranes, Artificial; D008904:Miniaturization / Q000379:methods; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D010781:Photography / Q000379:methods*; D012822:Silicon Dioxide / Q000737:chemistry*; D012828:Silicones / Q000737:chemistry*; D013499:Surface Properties
D004129:Dimethylpolysiloxanes; D008567:Membranes, Artificial; D012828:Silicones; C013830:baysilon; D012822:Silicon Dioxide