title: Resonant tunneling in nanocolumns improved by quantum collimation.
abstract: We report on a quantum collimation effect based on surface depletion regions in AlAs/GaAs nanocolumns with an embedded resonant tunneling structure. The considered MBE-grown nanodevices have been fabricated by means of a top-down approach that employs a reproducible lithographic definition of the vertical nanocolumns. By analyzing the scaling properties of these nanodevices, we discuss how a collimation effect due to a saddle point in the confining potential can explain an improved device performance of the ultimately scaled structures at room temperature.
authors.affiliation: Institute of Thin Films and Interfaces (ISG-1) and Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Jülich, D-52425 Jülich, Germany.
authors.forename: Jakob
authors.initials: J
authors.lastname: Wensorra
authors.forename: Klaus Michael
authors.initials: KM
authors.lastname: Indlekofer
authors.forename: Mihail Ion
authors.initials: MI
authors.lastname: Lepsa
authors.forename: Arno
authors.initials: A
authors.lastname: Förster
authors.forename: Hans
authors.initials: H
authors.lastname: Lüth
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D004553:Electric Conductivity; D004563:Electrochemistry / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry*; D011789:Quantum Theory
chemical_list: D017607:Aluminum Compounds; D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium