Low temperature growth of boron nitride nanotubes on substrates.
High growth temperatures (>1100 degrees C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 degrees C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.
Wang
Jiesheng
J
Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931, USA.
Kayastha
Vijaya K
VK
Yap
Yoke Khin
YK
Fan
Zhiyong
Z
Lu
Jia G
JG
Pan
Zhengwei
Z
Ivanov
Ilia N
IN
Puretzky
Alex A
AA
Geohegan
David B
DB
D000327:Adsorption; D001896:Boron Compounds / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000379:methods*; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013696:Temperature
D001896:Boron Compounds; C017282:boron nitride