title: Controlling the charge of a specific surface atom by the addition of a non-site-specific single impurity in a Si nanocrystal.
abstract: We show, by use of self-consistent calculations, that the charge on a radical surface site (RSS) on a hydrogen-terminated silicon nanocrystal can be controlled by the addition of a non-site-specific dopant atom. An RSS is a surface defect where the H-termination is missing. This new effect has important implications for future hybrid semiconductor/molecular nanoelectronics. We also calculate the energy and wave function of the RSS state and its nanoscale interactions with the dopant atom.
authors.affiliation: Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada. tblomqui@sfu.ca
authors.forename: Torbjörn
authors.initials: T
authors.lastname: Blomquist
authors.forename: George
authors.initials: G
authors.lastname: Kirczenow