Synthesis and electrical properties of ZnO nanowires.
Vertically aligned ZnO nanowires were synthesized on the p(+) silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline. The rectifying characteristics of the p-n heterojunction composed of ZnO nanowires and a p(+) silicon chip were observed. The positive turn-on voltage was 0.5V and the reverse saturation current was 0.01mA. These vertically aligned ZnO nanowires showed a low field emission threshold of 4V/microm at a current density of 0.1microA/cm(2). The dependence of emission current density on the electric field followed Fowler-Nordheim relationship.
Xing
Xiaoyan
X
Department of Materials Science, Fudan University, Shanghai 200433, China.
Zheng
Kaibo
K
Xu
Huahua
H
Fang
Fang
F
Shen
Haoting
H
Zhang
Jing
J
Zhu
Jian
J
Ye
Chunnuan
C
Cao
Guanying
G
Sun
Dalin
D
Chen
Guorong
G