Spin noise spectroscopy in GaAs.
We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
Oestreich
M
M
Institut für Festkörperphysik, Universität Hannover, Appelstrasse 2, D-30167 Hannover, Germany.
Römer
M
M
Haug
R J
RJ
Hägele
D
D