title: Near-edge electronic structure in NbS2.
abstract: The near-edge electronic and structural properties of 2H-NbS(2) were investigated using scanning tunneling microscopy (STM) and density-functional calculations. Geometry optimization of the near-edge structure using density-functional calculations was performed on [1010]- and [1010]-terminated layer edges. Ribbon model systems also included variation of the number of bound sulfur atoms at the edges. Atomic resolution STM data exhibit a pronounced electronic density of states at the outermost edge atomic sites but are otherwise bulk-like in the near-edge region. Optimized NbS2 ribbon structures confirm the STM results indicating that minimal reconstruction occurs and that the edge electronic structure exhibits a significant increase in local density of states compared to bulk. Simulated STM images using extended Hückel tight-binding calculations based on optimized ribbon structures successfully modeled the experimental STM results. The results indicate that the [1010] "Nb" edges are preferentially observed compared to the [1010] "S" edge possibly due to differences in stability.
authors.affiliation: Department of Chemistry and Biochemistry, Center for Computational Research, Seton Hall University, South Orange, New Jersey 07079-2694, USA.
authors.forename: Changki
authors.initials: C
authors.lastname: Kim
authors.forename: Stephen P
authors.initials: SP
authors.lastname: Kelty