title: Matrix-dependent structure of GeSi nanocrystals in SiC.
abstract: It is shown experimentally that GeSi nanocrystals in SiC created after high-dose Ge ion implantation and high-temperature annealing are hexagonal in a hexagonal 4H-SiC matrix and are of cubic structure in a cubic 3C-SiC matrix. This interesting fact could be explained by molecular dynamics as the force of the system nanocrystal-matrix to minimize its interface energy.
authors.affiliation: Electron Microscopy Group of Materials Science, University of Ulm 89069 Ulm, Germany. johannes.biskupek@uni-ulm.de
authors.forename: Johannes
authors.initials: J
authors.lastname: Biskupek
authors.forename: Ute
authors.initials: U
authors.lastname: Kaiser
authors.forename: Konrad
authors.initials: K
authors.lastname: Gärtner