title: Hall effect in the accumulation layers on the surface of organic semiconductors.
abstract: We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility muH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, nH, coincides with the density n calculated using the gate-channel capacitance and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive bandlike motion of field-induced charge carriers between trapping events.
authors.affiliation: Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, USA. podzorov@physics.rutgers.edu
authors.forename: V
authors.initials: V
authors.lastname: Podzorov
authors.forename: E
authors.initials: E
authors.lastname: Menard
authors.forename: J A
authors.initials: JA
authors.lastname: Rogers
authors.forename: M E
authors.initials: ME
authors.lastname: Gershenson