Matrix-dependent structure of GeSi nanocrystals in SiC.
It is shown experimentally that GeSi nanocrystals in SiC created after high-dose Ge ion implantation and high-temperature annealing are hexagonal in a hexagonal 4H-SiC matrix and are of cubic structure in a cubic 3C-SiC matrix. This interesting fact could be explained by molecular dynamics as the force of the system nanocrystal-matrix to minimize its interface energy.
Biskupek
Johannes
J
Electron Microscopy Group of Materials Science, University of Ulm 89069 Ulm, Germany. johannes.biskupek@uni-ulm.de
Kaiser
Ute
U
Gärtner
Konrad
K