title: Physical vapor deposition method for the high-throughput synthesis of solid-state material libraries.
abstract: A method that combines co-evaporation of pure elements from multiple finite-size sources on temperature-controlled substrates with independently controlled source shutters has been used for the synthesis of solid-state material combinatorial libraries. The source shutters are positioned to achieve a controlled gradient of the deposited elements across the substrate and are fixed during the course of deposition. Choice of the shutter position and the rate of deposition for each source allow the direct synthesis of continuous and controlled materials of varying composition. There are significant advantages of the method over alternatives which rely on sequential deposition and subsequent heat treatment to produce thin film materials. The parameters governing the creation of gradients have been identified and defined. Simulations and experimental data have been compared in the case of a single source. Results are presented for the synthesis of a ternary alloy library to demonstrate the methodology.
authors.affiliation: School of Chemistry, University of Southampton, Southampton SO17 1BJ, UK.
authors.forename: Samuel
authors.initials: S
authors.lastname: Guerin
authors.forename: Brian E
authors.initials: BE
authors.lastname: Hayden
mesh_terms: D020650:Combinatorial Chemistry Techniques / Q000295:instrumentation / Q000379:methods*; D006358:Hot Temperature; D007287:Inorganic Chemicals / Q000138:chemical synthesis*; D008956:Models, Chemical; D012825:Silicon / Q000737:chemistry; D014835:Volatilization
chemical_list: D007287:Inorganic Chemicals; D012825:Silicon