title: Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor.
abstract: In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments.
authors.affiliation: Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, California 94305-4085, USA. kaimeifu@stanford.edu
authors.forename: Kai-Mei C
authors.initials: KM
authors.lastname: Fu
authors.forename: Charles
authors.initials: C
authors.lastname: Santori
authors.forename: Colin
authors.initials: C
authors.lastname: Stanley
authors.forename: M C
authors.initials: MC
authors.lastname: Holland
authors.forename: Yoshihisa
authors.initials: Y
authors.lastname: Yamamoto