title: [Electroluminescent device based on terbium complex].
abstract: Rare earth complex Tb(BA)3phen has been synthesized, which is used as an emitting material in electroluminescence. The properties of monolayer device with the rate of 1000 r x min(-1) and the impure concentration of 1:5 are the best. And the highest brightness of this device reached 26.8 cd x cm(-2) at a fixed bias of 21 V. Bright green emission can be obtained from the optimized double-layer device and the highest EL brightness of the device reaches 322cd x m(-2) at the voltage of 22 V.
authors.affiliation: Institute of Optoelectronics, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing China.
authors.forename: Jing
authors.initials: J
authors.lastname: Xiao
authors.forename: Zhen-bo
authors.initials: ZB
authors.lastname: Deng
authors.forename: Deng-hui
authors.initials: DH
authors.lastname: Xu
authors.forename: Ying
authors.initials: Y
authors.lastname: Xu
authors.forename: Rui-fen
authors.initials: RF
authors.lastname: Wang