Resonant impurity bands in semiconductor superlattices.
It is shown that the confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. Intersubband absorption experiments, which can be nearly perfectly reproduced by the theory, corroborate this interpretation, which also requires reinterpretation of previous data.
Stehr
Dominik
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Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314 Dresden, Germany. d.stehr@fz-rossendorf.de
Metzner
Claus
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Helm
Manfred
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Roch
Tomas
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Strasser
Gottfried
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