Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As.
A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.
Masmanidis
S C
SC
Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125, USA.
Tang
H X
HX
Myers
E B
EB
Li
Mo
M
De Greve
K
K
Vermeulen
G
G
Van Roy
W
W
Roukes
M L
ML