title: Development of a 756 nm, 3 W injection-locked cw Ti:sapphire laser.
abstract: We have developed a 756 nm, 3 W single-frequency cw Ti:sapphire laser by using the technique of injection locking. A cw Ti:sapphire laser in a ring-type configuration was forced to lase unidirectionally by use of an optical diode to prevent a high-power backward laser from disturbing the injection laser. A master laser was amplified by a broad-area laser diode and coupled into a single-mode fiber to generate a 50 mW injection laser with a Gaussian beam profile, which was enough to lock the Ti:sapphire laser at full power of 3 W. Such a high-power single-frequency Ti:sapphire laser enables a watt-level blue or near-ultraviolet single-frequency laser to be generated by frequency doubling.
authors.affiliation: Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, 150 Duckjin-Dong Yuseong-Gu, Daejon 305-353, Republic of Korea. yhcha@kaeri.re.kr
authors.forename: Yong Ho
authors.initials: YH
authors.lastname: Cha
authors.forename: Yong Woo
authors.initials: YW
authors.lastname: Lee
authors.forename: Kwang-Hoon
authors.initials: KH
authors.lastname: Ko
authors.forename: Euo Chang
authors.initials: EC
authors.lastname: Jung
authors.forename: Gwon
authors.initials: G
authors.lastname: Lim
authors.forename: Jaewoo
authors.initials: J
authors.lastname: Kim
authors.forename: Taek-Soo
authors.initials: TS
authors.lastname: Kim
authors.forename: Do-Young
authors.initials: DY
authors.lastname: Jeong