title: Resonant impurity bands in semiconductor superlattices.
abstract: It is shown that the confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. Intersubband absorption experiments, which can be nearly perfectly reproduced by the theory, corroborate this interpretation, which also requires reinterpretation of previous data.
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314 Dresden, Germany. d.stehr@fz-rossendorf.de
authors.forename: Dominik
authors.initials: D
authors.lastname: Stehr
authors.forename: Claus
authors.initials: C
authors.lastname: Metzner
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm
authors.forename: Tomas
authors.initials: T
authors.lastname: Roch
authors.forename: Gottfried
authors.initials: G
authors.lastname: Strasser