New types of unstable step-flow growth on Si(111)-(7 x 7) during molecular beam epitaxy: scaling and universality.
New types of unstable homoepitaxial growth of vicinal surfaces are studied using ex situ atomic force microscopy. The growth features are two types of step bunching with straight step edges between 700 and 775 degrees C and one type of simultaneous bunching and meandering at 800 degrees C. The results of a quantitative size scaling analysis of the straight steps are discussed from the perspective of universality classes in bunching theory.
Omi
Hiroo
H
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya Atsugi, Kanagawa 243-0198, Japan. homi@will.brl.ntt.co.jp
Homma
Yoshikazu
Y
Tonchev
Vesselin
V
Pimpinelli
Alberto
A