title: Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As.
abstract: A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.
authors.affiliation: Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: S C
authors.initials: SC
authors.lastname: Masmanidis
authors.forename: H X
authors.initials: HX
authors.lastname: Tang
authors.forename: E B
authors.initials: EB
authors.lastname: Myers
authors.forename: Mo
authors.initials: M
authors.lastname: Li
authors.forename: K
authors.initials: K
authors.lastname: De Greve
authors.forename: G
authors.initials: G
authors.lastname: Vermeulen
authors.forename: W
authors.initials: W
authors.lastname: Van Roy
authors.forename: M L
authors.initials: ML
authors.lastname: Roukes