Development of a 756 nm, 3 W injection-locked cw Ti:sapphire laser.
We have developed a 756 nm, 3 W single-frequency cw Ti:sapphire laser by using the technique of injection locking. A cw Ti:sapphire laser in a ring-type configuration was forced to lase unidirectionally by use of an optical diode to prevent a high-power backward laser from disturbing the injection laser. A master laser was amplified by a broad-area laser diode and coupled into a single-mode fiber to generate a 50 mW injection laser with a Gaussian beam profile, which was enough to lock the Ti:sapphire laser at full power of 3 W. Such a high-power single-frequency Ti:sapphire laser enables a watt-level blue or near-ultraviolet single-frequency laser to be generated by frequency doubling.
Cha
Yong Ho
YH
Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, 150 Duckjin-Dong Yuseong-Gu, Daejon 305-353, Republic of Korea. yhcha@kaeri.re.kr
Lee
Yong Woo
YW
Ko
Kwang-Hoon
KH
Jung
Euo Chang
EC
Lim
Gwon
G
Kim
Jaewoo
J
Kim
Taek-Soo
TS
Jeong
Do-Young
DY