title: Synthesis and electrical properties of ZnO nanowires.
abstract: Vertically aligned ZnO nanowires were synthesized on the p(+) silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline. The rectifying characteristics of the p-n heterojunction composed of ZnO nanowires and a p(+) silicon chip were observed. The positive turn-on voltage was 0.5V and the reverse saturation current was 0.01mA. These vertically aligned ZnO nanowires showed a low field emission threshold of 4V/microm at a current density of 0.1microA/cm(2). The dependence of emission current density on the electric field followed Fowler-Nordheim relationship.
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Xing
authors.forename: Kaibo
authors.initials: K
authors.lastname: Zheng
authors.forename: Huahua
authors.initials: H
authors.lastname: Xu
authors.forename: Fang
authors.initials: F
authors.lastname: Fang
authors.forename: Haoting
authors.initials: H
authors.lastname: Shen
authors.forename: Jing
authors.initials: J
authors.lastname: Zhang
authors.forename: Jian
authors.initials: J
authors.lastname: Zhu
authors.forename: Chunnuan
authors.initials: C
authors.lastname: Ye
authors.forename: Guanying
authors.initials: G
authors.lastname: Cao
authors.forename: Dalin
authors.initials: D
authors.lastname: Sun
authors.forename: Guorong
authors.initials: G
authors.lastname: Chen