title: Evidence for native-defect donors in n-type ZnO.
abstract: Recent theory has found that native defects such as the O vacancy V(O) and Zn interstitial Zn(I) have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory and experiment to show that, under N ambient, the complex Zn(I)-N(O) is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase. Since the Zn vacancy is also the dominant acceptor in such material, we must conclude that native defects are important donors and acceptors in ZnO.
authors.affiliation: Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, USA.
authors.forename: D C
authors.initials: DC
authors.lastname: Look
authors.forename: G C
authors.initials: GC
authors.lastname: Farlow
authors.forename: Pakpoom
authors.initials: P
authors.lastname: Reunchan
authors.forename: Sukit
authors.initials: S
authors.lastname: Limpijumnong
authors.forename: S B
authors.initials: SB
authors.lastname: Zhang
authors.forename: K
authors.initials: K
authors.lastname: Nordlund