title: Doped Mott insulators are insulators: hole localization in the cuprates.
abstract: We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of states at zero temperature. The energy scale for the pseudogap is set by the nearest-neighbor singlet-triplet splitting. As this energy scale vanishes if transitions, virtual or otherwise, to the upper Hubbard band are not permitted, the fundamental length scale in the pseudogap regime is the average distance between doubly occupied sites. Consequently, the pseudogap is tied to the noncommutativity of the two limits U-->infinity (U the on-site Coulomb repulsion) and L -->infinity (the system size).
authors.affiliation: Loomis Laboratory of Physics, University of Illinois at Urbana-Champaign, 1110 W Green Street, Urbana, Illinois 61801-3080, USA.
authors.forename: Ting-Pong
authors.initials: TP
authors.lastname: Choy
authors.forename: Philip
authors.initials: P
authors.lastname: Phillips