title: Novel nanotube-on-insulator (NOI) approach toward single-walled carbon nanotube devices.
abstract: We present a novel nanotube-on-insulator (NOI) approach for producing high-yield nanotube devices based on aligned single-walled carbon nanotubes. First, we managed to grow aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which bear analogy to industry-adopted silicon-on-insulator substrates. On the basis of the nanotube arrays, we demonstrated registration-free fabrication of both top-gated and polymer-electrolyte-gated field-effect transistors with minimized parasitic capacitance. In addition, we have developed a way to transfer these aligned nanotube arrays to flexible substrates successfully. Our approach has great potential for high-density, large-scale integrated systems based on carbon nanotubes for both micro- and flexible electronics.
authors.affiliation: Department of Electrical Engineering -Electrophysics, University of Southern California, Los Angeles, 90089, USA.
authors.forename: Xiaolei
authors.initials: X
authors.lastname: Liu
authors.forename: Song
authors.initials: S
authors.lastname: Han
authors.forename: Chongwu
authors.initials: C
authors.lastname: Zhou