title: Direct study of the proximity effect in the normal layer inside of the stacked SINIS device.
abstract: We have observed a striking anisotropy in the electrical transport of layered multiterminal SINIS structures [where S, I, and N denote a superconductor (Nb), an insulator (AlOx), and a normal metal (Al), respectively]. We find that the lateral conductivity of the N layer is dissipative, but a superconducting current can flow normal to the structure, suggesting a direct Josephson coupling between the external S electrodes. A small coherent contribution to the lateral conductivity of the N layer is observed near zero voltage.
authors.affiliation: Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA.
authors.forename: I P
authors.initials: IP
authors.lastname: Nevirkovets
authors.forename: O
authors.initials: O
authors.lastname: Chernyashevskyy
authors.forename: J B
authors.initials: JB
authors.lastname: Ketterson