Single-crystal CdSe nanowires prepared via vapor-phase growth assisted with silicon.
Hexagonal cadmium selenide (CdSe) nanowires, with diameter around 20 nm, were synthesized using a simple vapor-phase growth. Silicon (Si) powder acts as a source material assisting the synthesis, which is very important to the formation of the CdSe nanowires. We also suggest that self-catalysis at the Cd-terminated (0001) surface, together with the assistance action of Si, leads to the formation of wire-like structures to be formed. Meanwhile, the assistance of Si is responsible for the fineness and uniformity of the CdSe nanowires. The possible growth mechanism of the CdSe nanowires is proposed, and the optical property of the as-grown CdSe nanowires is characterized.
Wang
Z Y
ZY
Key Laboratory of Materials Physics, Institute of Solid State Physics, The Graduate School of Chinese Academy of Sciences, Chinese Academy of Sciences, P0. Box 1129, Hefei 230031, P R. China.
Zhang
L D
LD
Ye
C H
CH
Fang
X S
XS
Xiao
Z D
ZD
Kong
M G
MG
D019187:Cadmium Compounds / Q000737:chemistry*; D003460:Crystallization; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology; D018036:Selenium Compounds / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*
D019187:Cadmium Compounds; D018036:Selenium Compounds; C058667:cadmium selenide; D012825:Silicon