Elastic, piezoelectric, and dielectric characterization of modified BiScO3-PbTiO3 ceramics.
The perovskite solid solution system (1-x)BiScO3-(x)PbTiO3 represents an interesting new family of high-temperature piezoelectric materials. Compositions near the morphotropic phase boundary (x approximately 0.64) have been reported to have high Curie temperatures (Tc > 450 degrees C) and good piezoelectric coefficients (d33 approximately 460 pC/N). In this work, manganese additions were used to improve the high-temperature electrical resistivity and RC time constant of compositions near the morphotropic phase boundary. The addition of manganese was found to shift Tc to slightly lower temperatures (442 degrees C and 456 degrees C for x = 0.64 and x = 0.66, respectively). The piezoelectric activities of the modified materials were found to be reduced slightly due to the hardening effect of manganese; however, the temperature stability and resistivity of the modified materials were significantly enhanced. In this paper we present, for the first time, a complete set of materials constants, including the elastic (sij, cij), piezoelectric (dij, eij, gij, hij), dielectric (epsilonij, betaij), and electromechanical (kij) coefficients and compare them to both unmodified 0.36BiScO3-0.64PbTiO3 and PZT5A ceramics.
Zhang
Shujun
S
Material Research Institute, Pennsylvania State University, University Park, PA 16802, USA. soz1@psu.edu
Alberta
Edward F
EF
Eitel
Richard E
RE
Randall
Clive A
CA
Shrout
Thomas R
TR
D002516:Ceramics / Q000737:chemistry* / Q000528:radiation effects; D003198:Computer Simulation; D017076:Computer-Aided Design; D004548:Elasticity; D017097:Electric Impedance; D004563:Electrochemistry / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007854:Lead / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D008956:Models, Chemical; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014159:Transducers; D014463:Ultrasonography / Q000295:instrumentation* / Q000379:methods
D007854:Lead; C028356:lead tetroxide