title: Size-induced changes in optical and X-ray photoelectron spectra of GaN nanoparticles deposited at lower substrate temperature.
abstract: This study reports the synthesis of GaN nanoparticles having hexagonal structure by a simple technique of activated reactive evaporation with substrates kept at comparatively lower temperatures than usually reported. By varying the substrate temperature from 30 degrees C to 350 degrees C, it is possible to vary nanoparticle sizes from 5-30 nm. X-ray diffraction and X-ray photoelectron spectroscopy analysis confirm the formation of GaN on quartz and silicon substrates at room temperature. The observed size dependent shift in energy position, large increase in full width at half maximum value of Ga 3d and N 1s X-ray photoelectron spectroscopy peaks and blue shift in the optical absorption edge are related to nanoparticle character.
authors.affiliation: Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
authors.forename: A K
authors.initials: AK
authors.lastname: Mann
authors.forename: D
authors.initials: D
authors.lastname: Varandani
authors.forename: B R
authors.initials: BR
authors.lastname: Mehta
authors.forename: L K
authors.initials: LK
authors.lastname: Malhotra
authors.forename: S M
authors.initials: SM
authors.lastname: Shivaprasad
mesh_terms: D005708:Gallium / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods; D043942:Nanotubes; D010316:Particle Size; D011791:Quartz / Q000737:chemistry; D012825:Silicon / Q000737:chemistry; D013052:Spectrometry, X-Ray Emission / Q000379:methods*; D013499:Surface Properties; D013696:Temperature; D014961:X-Ray Diffraction; D014965:X-Rays
chemical_list: D011791:Quartz; C473348:gallium nitride; D005708:Gallium; D012825:Silicon