Optimization of anisotropically etched silicon surface-relief gratings for substrate-mode optical interconnects.
The optimum profiles of right-angle-face anisotropically etched silicon surface-relief gratings illuminated at normal incidence for substrate-mode optical interconnects are determined for TE, TM, and random linear (RL) polarizations. A simulated annealing algorithm in conjunction with the rigorous coupled-wave analysis is used. The optimum diffraction efficiencies of the -1 forward-diffracted order are 37.3%, 67.1%, and 51.2% for TE-, TM-, and RL-polarization-optimized profiles, respectively. Also, the sensitivities to grating thickness, slant angle, and incident angle of the optimized profiles are presented.
Wu
Shun-Der
SD
School of Electrical and Computer Engineering, Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332, USA. gte782q@gmail.com
Gaylord
Thomas K
TK
Maikisch
Jonathan S
JS
Glytsis
Elias N
EN