Germanium nanowire epitaxy: shape and orientation control.
Epitaxial growth of nanowires along the 111 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 degrees C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 111 growth, 110 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.
Adhikari
Hemant
H
Department of Materials Science and Engineering, Geballe Laboratory for Advanced Materials, and Department of Chemistry, Stanford University, Stanford, California 94305, USA.
Marshall
Ann F
AF
Chidsey
Christopher E D
CE
McIntyre
Paul C
PC
D005857:Germanium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning / Q000379:methods; D043942:Nanotubes / Q000737:chemistry*; D010316:Particle Size; D012680:Sensitivity and Specificity; D012825:Silicon / Q000737:chemistry; D013499:Surface Properties
D005857:Germanium; D012825:Silicon