title: ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across au electrodes.
abstract: Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/nanowires across paired Au electrodes using dielectrophoresis. A current of 0.5 microA at 1.5 V forward bias has been received, and the diode can bear an applied voltage of up to 10 V. The ideality factor of the diode is approximately 3, and the on-to-off current ratio is as high as 2,000. The detailed IV characteristics of the Schottky diodes have been investigated at low temperatures. The formation of the Schottky diodes is suggested due to the asymmetric contacts formed in the dielectrophoresis aligning process.
authors.affiliation: School of Materials Science and Engineering, School of Electrical and Computer Engineering, and School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Chang Shi
authors.initials: CS
authors.lastname: Lao
authors.forename: Jin
authors.initials: J
authors.lastname: Liu
authors.forename: Puxian
authors.initials: P
authors.lastname: Gao
authors.forename: Liyuan
authors.initials: L
authors.lastname: Zhang
authors.forename: Dragomir
authors.initials: D
authors.lastname: Davidovic
authors.forename: Rao
authors.initials: R
authors.lastname: Tummala
authors.forename: Zhong L
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D004566:Electrodes; D004586:Electrophoresis; D006046:Gold / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods; D043942:Nanotubes / Q000737:chemistry*; D010316:Particle Size; D012680:Sensitivity and Specificity; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013499:Surface Properties; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D006046:Gold; D012822:Silicon Dioxide; D015034:Zinc Oxide; D012825:Silicon