title: Diameter-dependent electromechanical properties of GaN nanowires.
abstract: The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value ( approximately 300 GPa) for a large diameter nanowire (d=84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2,800 for d=84 nm, significantly greater than what is obtained from micromachined Si resonators of comparable surface-to-volume ratio. This implies significant advantages of smooth-surfaced GaN nanowire resonators for nanoelectromechanical system (NEMS) applications. Two closely spaced resonances are observed and attributed to the low-symmetry triangular cross section of the nanowires.
authors.affiliation: Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104-6272, USA.
authors.forename: Chang-Yong
authors.initials: CY
authors.lastname: Nam
authors.forename: Papot
authors.initials: P
authors.lastname: Jaroenapibal
authors.forename: Douglas
authors.initials: D
authors.lastname: Tham
authors.forename: David E
authors.initials: DE
authors.lastname: Luzzi
authors.forename: Stephane
authors.initials: S
authors.lastname: Evoy
authors.forename: John E
authors.initials: JE
authors.lastname: Fischer
mesh_terms: D005708:Gallium / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D010316:Particle Size; D012680:Sensitivity and Specificity; D013499:Surface Properties
chemical_list: C473348:gallium nitride; D005708:Gallium