Infrared imaging of the nanometer-thick accumulation layer in organic field-effect transistors.
We report on infrared (IR) spectromicroscopy of the electronic excitations in nanometer-thick accumulation layers in field-effect transistor (FET) devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.
Li
Z Q
ZQ
Department of Physics, University of California, San Diego, La Jolla, California 92093, USA. zhiqiang@physics.ucsd.edu
Wang
G M
GM
Sai
N
N
Moses
D
D
Martin
M C
MC
Di Ventra
M
M
Heeger
A J
AJ
Basov
D N
DN
D055598:Chemical Phenomena; D002627:Chemistry, Physical; D004867:Equipment Design; D008567:Membranes, Artificial; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D010316:Particle Size; D012680:Sensitivity and Specificity; D013055:Spectrophotometry, Infrared / Q000295:instrumentation / Q000379:methods*; D013499:Surface Properties; D013876:Thiophenes / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry; D014173:Transistors, Electronic
D008567:Membranes, Artificial; D013876:Thiophenes; C507295:poly(3-hexylthiophene); C009495:titanium dioxide; D014025:Titanium