An approach to the systematic distortion correction in aberration-corrected HAADF images.
Systematic distortion has been analysed in high-angle annular dark-field (HAADF) images which may be caused by electrical interference. Strain mapping techniques have been applied to a strain-free GaAs substrate in order to provide a broad analysis of the influence of this distortion on the determination of local strain in the heterostructure. We have developed a methodology for estimating the systematic distortion, and we correct the original images by using an algorithm that removes this systematic distortion.
Sanchez
A M
AM
Departamento de Ciencia de los Materiales e I.M. y Q.I., Universidad de Cadiz, Puerto Real, 11510, Spain. ana.fuentes@uca.es
Galindo
P L
PL
Kret
S
S
Falke
M
M
Beanland
R
R
Goodhew
P J
PJ