Three-dimensional nanoscale composition mapping of semiconductor nanowires.
We demonstrate the three-dimensional composition mapping of a semiconductor nanowire with single-atom sensitivity and subnanometer spatial resolution using atom probe tomography. A new class of atom probe, the local electrode atom probe (LEAP) microscope, was used to map the position of single Au atoms in an InAs nanowire and to image the interface between a Au catalyst and InAs in three dimensions with 0.3-nm resolution. These results establish atom probe tomography as a uniquely powerful tool for analyzing the chemical composition of semiconductor nanostructures.
Perea
Daniel E
DE
Department of Materials Science and Engineering, Department of Electrical Engineering and Computer Science, and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA.
Allen
Jonathan E
JE
May
Steven J
SJ
Wessels
Bruce W
BW
Seidman
David N
DN
Lauhon
Lincoln J
LJ
D001152:Arsenicals / Q000737:chemistry*; D002384:Catalysis; D006046:Gold / Q000737:chemistry; D007204:Indium / Q000737:chemistry*; D008839:Microelectrodes; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors; D012680:Sensitivity and Specificity; D013499:Surface Properties; D014054:Tomography / Q000295:instrumentation* / Q000379:methods*
D001152:Arsenicals; D007204:Indium; D006046:Gold; C076773:indium arsenide