Quantum oscillation of the tunneling conductance in fully epitaxial double barrier magnetic tunnel junctions.
We investigated spin-dependent tunneling conductance properties in fully epitaxial double MgO barrier magnetic tunnel junctions with layered nanoscale Fe islands as a middle layer. Clear oscillations of the tunneling conductance were observed as a function of the bias voltage. The oscillation, which depends on the middle layer thickness and the magnetization configuration, is interpreted by the modulation of tunneling conductance due to the spin-polarized quantum well states created in the middle Fe layer. This first observation of the quantum size effect in the fully epitaxial double barrier magnetic tunnel junction indicates great potential for the development of the spin-dependent resonant tunneling effect in coherent tunneling regime.
Department of Materials Science, Graduate School of Engineering, Tohoku University, Aobayama 6-6-02, Sendai 980-8579, Japan.
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Nozaki
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Tezuka
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Inomata