Nonexponential relaxations in a two-dimensional electron system in silicon.
The relaxations of conductivity have been studied in a strongly disordered two-dimensional (2D) electron system in Si after excitation far from equilibrium by a rapid change of carrier density ns at low temperatures T. The dramatic and precise dependence of the relaxations on ns and T strongly suggests (a) the transition to a glassy phase as T-->0, and (b) the Coulomb interactions between 2D electrons play a dominant role in the observed out-of-equilibrium dynamics.
Jaroszyński
J
J
National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA. jaroszy@magnet.fsu.edu
Popović
Dragana
D