Silicon drift and pixel devices for X-ray imaging and spectroscopy.
Starting from the basic photon detection process in semiconductors, the function, principles and properties of sophisticated silicon detectors are discussed. These detectors are based on, or inspired by, the semiconductor drift detector. They have already shown their potential in X-ray astronomy (pn-CCD) and in X-ray spectroscopy (silicon drift diode), and further detector types (DEPFET pixel detector and macro-pixel detector) are under development for several other future experiments. The detectors seem to be very well suited for synchrotron radiation experiments.
Lutz
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MPI-Halbleiterlabor, Otto Hahn Ring 6, D-81739 München, Germany. gerhard.lutz@hll.mpg.de