Interfaces of correlated electron systems: proposed mechanism for colossal electroresistance.
Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group approach. We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semiconductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.
Oka
Takashi
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Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan.
Nagaosa
Naoto
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