Silicon avalanche photodiodes for direct detection of X-rays.
Silicon avalanche photodiodes (APDs) are discussed as fast X-ray detectors for synchrotron radiation. The emphasis is on ;direct' detection, where the X-ray is absorbed within the silicon APD itself, and, therefore, on use with medium-energy X-rays, <30 keV. The impact of APD structure on device performance is examined, and representative data from many different commercial devices are presented. Specific areas discussed include signal shapes, high-rate behavior, time resolution and pulse-height response. Data from several APD arrays are also presented, as is a detailed description of an integrated package system. Tables are included comparing commercially available devices, including arrays.
SPring-8/JASRI, Hyogo, Japan. baron@spring8.or.jp
Alfred Q R
AQ
Baron
Shunji
S
Kishimoto
John
J
Morse
Jean Marie
JM
Rigal
D004867:Equipment Design; D049268:Positron-Emission Tomography; D012825:Silicon; D017356:Synchrotrons / Q000295:instrumentation*; D014965:X-Rays
D012825:Silicon