Surface and interface studies of GaN epitaxy on Si(111) via buffer layers.
Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB(2)(0001) clarify the origin of the N polarity.
Institute for Materials Research, Tohoku University, Sendai, Japan.
Yukiko
Y
Yamada-Takamura
Z T
ZT
Wang
Y
Y
Fujikawa
T
T
Sakurai
Q K
QK
Xue
J
J
Tolle
P-L
PL
Liu
A V G
AV
Chizmeshya
J
J
Kouvetakis
I S T
IS
Tsong