Half-metallic digital ferromagnetic heterostructure composed of a delta-doped layer of Mn in Si.
We propose and investigate the properties of a digital ferromagnetic heterostructure consisting of a delta-doped layer of Mn in Si, using ab initio electronic-structure methods. We find that (i) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (ii) the heterostructure is a two-dimensional half-metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. The band lineup is found to be favorable for retaining the half-metal character to near the Curie temperature. This kind of heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.
Department of Physics, University of California, Davis, Davis, California 95616-8677, USA.
M C
MC
Qian
C Y
CY
Fong
Kai
K
Liu
W E
WE
Pickett
J E
JE
Pask
L H
LH
Yang