title: Photoreflectance characteristic about AlGaAs/GaAs heterostructure.
abstract: We investigated the photoreflectance (PR) spectra of as-grown, etched AlGaAs/GaAs heterostructure sample. As etching time increases, the electric fields are reduced. And the surface and interface electric field calculated for the AlGaAs/GaAs sample, respectively.
authors.affiliation: Department of Physics, Yeungnam University, Gyeongsan 712-749, South Korea.
authors.forename: Jae-In
authors.initials: JI
authors.lastname: Yu
authors.forename: Jae-Gon
authors.initials: JG
authors.lastname: Yun
authors.forename: Dong-Lyeul
authors.initials: DL
authors.lastname: Kim
authors.forename: In-Ho
authors.initials: IH
authors.lastname: Bae
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D004560:Electricity; D005708:Gallium / Q000737:chemistry*; D010777:Photochemistry; D013057:Spectrum Analysis
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum