Photoreflectance characteristic about AlGaAs/GaAs heterostructure.
We investigated the photoreflectance (PR) spectra of as-grown, etched AlGaAs/GaAs heterostructure sample. As etching time increases, the electric fields are reduced. And the surface and interface electric field calculated for the AlGaAs/GaAs sample, respectively.
Yu
Jae-In
JI
Department of Physics, Yeungnam University, Gyeongsan 712-749, South Korea.
Yun
Jae-Gon
JG
Kim
Dong-Lyeul
DL
Bae
In-Ho
IH
D000535:Aluminum / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D004560:Electricity; D005708:Gallium / Q000737:chemistry*; D010777:Photochemistry; D013057:Spectrum Analysis
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum