title: InAs1-xPx nanowires for device engineering.
abstract: We present the growth of homogeneous InAs(1-x)P(x) nanowires as well as InAs(1-x)P(x) heterostructure segments in InAs nanowires with P concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter of the wires. The crystal structure of the InAs as well as the InAs(1-x)P(x) segments were found to be wurtzite as determined from high-resolution transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual heterostructured wires to extract the conduction band offset of InAs(1-x)P(x) relative to InAs as a function of composition. From these measurements we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2 eV. Finally, homogeneous InAs(0.8)P(0.2) nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at room temperature.
authors.affiliation: Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, S-221 00, Lund, Sweden.
authors.forename: A I
authors.initials: AI
authors.lastname: Persson
authors.forename: M T
authors.initials: MT
authors.lastname: Björk
authors.forename: S
authors.initials: S
authors.lastname: Jeppesen
authors.forename: J B
authors.initials: JB
authors.lastname: Wagner
authors.forename: L R
authors.initials: LR
authors.lastname: Wallenberg
authors.forename: L
authors.initials: L
authors.lastname: Samuelson