title: Circuit fabrication at 17 nm half-pitch by nanoimprint lithography.
abstract: High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.
authors.affiliation: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA.
authors.forename: Gun-Young
authors.initials: GY
authors.lastname: Jung
authors.forename: Ezekiel
authors.initials: E
authors.lastname: Johnston-Halperin
authors.forename: Wei
authors.initials: W
authors.lastname: Wu
authors.forename: Zhaoning
authors.initials: Z
authors.lastname: Yu
authors.forename: Shih-Yuan
authors.initials: SY
authors.lastname: Wang
authors.forename: William M
authors.initials: WM
authors.lastname: Tong
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Li
authors.forename: Jonathan E
authors.initials: JE
authors.lastname: Green
authors.forename: Bonnie A
authors.initials: BA
authors.lastname: Sheriff
authors.forename: Akram
authors.initials: A
authors.lastname: Boukai
authors.forename: Yuri
authors.initials: Y
authors.lastname: Bunimovich
authors.forename: James R
authors.initials: JR
authors.lastname: Heath
authors.forename: R Stanley
authors.initials: RS
authors.lastname: Williams