Circuit fabrication at 17 nm half-pitch by nanoimprint lithography.
High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.
Jung
Gun-Young
GY
Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA.
Johnston-Halperin
Ezekiel
E
Wu
Wei
W
Yu
Zhaoning
Z
Wang
Shih-Yuan
SY
Tong
William M
WM
Li
Zhiyong
Z
Green
Jonathan E
JE
Sheriff
Bonnie A
BA
Boukai
Akram
A
Bunimovich
Yuri
Y
Heath
James R
JR
Williams
R Stanley
RS