An integrated logic circuit assembled on a single carbon nanotube.
Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor-type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA.
Zhihong
Z
Chen
Joerg
J
Appenzeller
Yu-Ming
YM
Lin
Jennifer
J
Sippel-Oakley
Andrew G
AG
Rinzler
Jinyao
J
Tang
Shalom J
SJ
Wind
Paul M
PM
Solomon
Phaedon
P
Avouris