Quantum transport through C48N12 based atomic devices.
We report numerical calculations on the quantum transport through C48N12 based devices from first principles. We find that the transport properties are very sensitive to orientations of the molecules to the electrode. Different orientations can give rise to semiconducting to metallic behaviors. Our results show that the charge transfer which can be tuned by the gate voltage plays an important role in determining the transport properties. By varying the gate voltages, the transport properties can be changed from semiconducting to metallic behaviors and thereby magnifying effect can be achieved.
Department of Physics, The Center of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China.
Yan
Y
Xu
Jian
J
Wang
Shijie
S
Xu