Novel growth of aluminium nitride nanowires.
This work describes novel growth of aluminium nitride (AIN) nanowires by nitridation of a mixture consists of aluminium and ammonium chloride powders (Al:NH4Cl = 1.5:1 weight ratio) at 1000 degrees C for 1 h in flowing nitrogen gas (1 l/min). XRD analysis of the product showed the formation of pure hexagonal AIN. SEM micrographs of as-synthesized product revealed the growth of homogeneous AIN nanowires (phi 40-150 nm). No droplets were observed at the tips of obtained nanowires which suggests that they were grown mainly by a vapor-phase reactions mechanism. Thermodynamic analysis of possible intermediate reactions in the operating temperatures range illustrates that these nanowires could be grown via spontaneous vapor-phase chlorination-nitridation sequences.
Radwan
M
M
Central Metallurgical Research and Development Institute (CMRDI), PD. Box 87 Helwan, Cairo 11421, Egypt.
Bahgat
M
M
D017607:Aluminum Compounds / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology; D014961:X-Ray Diffraction
D017607:Aluminum Compounds; C052045:aluminum nitride