Geometrical model for the energy of semicoherent interphase interfaces.
The basis for the considerations given in this paper is the O-lattice description of crystalline interfaces of Bollmann. In the development of his approach presented here, all possible interfacial planes between two crystal phases having a defined orientation relationship are considered. The energies of these interfaces are then computed in terms of the energies of the primary intrinsic dislocations. A number of modeling interactions are incorporated into this approach, and a better agreement with experimental data is thus obtained.
Ecob
R C
RC
Department of Metallurgy and Materials' Science, University of Cambridge, Cambridge, England.
Ralph
B
B