Influence of oxidized layer on operating voltage and luminance of nanocrystalline silicon electroluminescent device.
A direct current (DC) operating voltage and luminescence property of red electroluminescent (EL) devices with and/or without a silicon dioxide (SiO2) layer at interface between nanocrystalline Si (nc-Si) region and Si substrate has investigated. The removal of SiO2 layer in the EL device led to the lowering of DC operating voltage from 4.0 up to 2.0 V and the increase of luminescence intensity more than one order of magnitude. The external quantum efficiency of red luminescence from the EL device without the SiO2 layer at the DC operating voltage of 3.0 V was 0.5%. These were realized by the efficient and easy injection of carriers to the radiative recombination centers in the nc-Si region due to the removal of SiO2 layer. These results indicate that the removal of SiO2 layer is drastically improved the DC operating voltage and luminescence intensity for the nc-Si based EL device.
Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka, Hatoyama, Hikigun, Saitama 350-0394, Japan.
Keisuke
K
Sato
Kenji
K
Hirakuri
D003460:Crystallization; D004563:Electrochemistry; D049449:Luminescence; D049329:Nanostructures / Q000737:chemistry; D010084:Oxidation-Reduction; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D017550:Spectroscopy, Fourier Transform Infrared
D012822:Silicon Dioxide; D012825:Silicon