Defects creation under UV irradiation of PbWO4 crystals.
A systematic study of photothermally stimulated defects creation processes is carried out by the thermally stimulated luminescence (TSL) method for a large number of undoped and doped PbWO4 crystals under irradiation at 80-180 K in the 3.4-4.3 eV energy range. The activation energy Ea for the regular exciton state disintegration is found to be approximately 0.1 eV. For defect-related states disintegration, Ea varies in the crystals studied from 0.03 to 0.36 eV. The origin of the defect-related states is discussed. The conclusion is made that not only a release of charge carriers but also charge transfer processes take place under UV irradiation of PbWO4 crystals.
Institute of Physics AS CR, Cukrovarnicka 10, 162 53 Prague, Czech Republic.
P
P
Bohacek
P
P
Fabeni
A
A
Krasnikov
M
M
Nikl
G P
GP
Pazzi
C
C
Susini
S
S
Zazubovich
D003460:Crystallization / Q000379:methods*; D004307:Dose-Response Relationship, Radiation; D008422:Materials Testing; D011829:Radiation Dosage; D013819:Thermoluminescent Dosimetry / Q000379:methods*; D017973:Tungsten Compounds / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects*; D014466:Ultraviolet Rays
D017973:Tungsten Compounds; C481386:lead tungstate