Synthesis of silica nanowires by active oxidation of silicon substrates.
Amorphous silica nanowires have been produced by thermal annealing of Si/SiO2/Ni substrate structures at 900 degrees C under an atmosphere of hexamethyldisilazane (HMDS) and hydrogen (H2). The wires have diameter ranging from 35 to 55 nm, which are controlled by the Ni particle size. It is demonstrated that the growth occurs through vapor-liquid-solid mechanisms, and it is proposed that the vapor source is volatile SiO generated from the etching of the Si substrate through active oxidation reactions. The role of the HMDS-H2 atmosphere in promoting such reactions is discussed.
Ferlauto
Andre S
AS
Departamento de Fisica da Universidade Federal de Minas Gerais, Brazil.
Oliveira
Sergio
S
Silva
Edelma E
EE
Magalhaes-Paniago
Rogerio
R
Ladeira
Luiz O
LO
Lacerda
Rodrigo G
RG
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004559:Electric Wiring; D008422:Materials Testing; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010084:Oxidation-Reduction; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*
D012822:Silicon Dioxide; D012825:Silicon