J-aggregation in alpha-sexithiophene submonolayer films on silicon dioxide.
We report on the observation of J-aggregates in submonolayer films of alpha-sexithiophene grown on silicon dioxide. Photoluminescence spectroscopy reveals that submonolayers are formed by molecules lying flat on the substrate with a head to tail configuration. Excitation energy dependence of photoluminescence shows a red-shifted absorption with respect to isolated molecules and a negligible Stokes shift between absorption and emission. The pronounced structural order of J-aggregates is reflected in the fwhm of the emission bands. From time-resolved and low-temperature photoluminescence experiments, we infer a quantum yield of the J-aggregate between 0.6 and 1. The demonstration of spontaneous formation of J-aggregates of pi-conjugated systems on amorphous silicon-based substrates can be relevant for the development of organic-inorganic hybrid photonic devices.
Da Como
Enrico
E
Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche, Bologna, Italy. e.dacomo@bc.ismn.cnr.it
Loi
Maria Antonietta
MA
Murgia
Mauro
M
Zamboni
Roberto
R
Muccini
Michele
M