title: Role of interstitial voids in oxides on formation and stabilization of reactive radicals: interstitial HO2 radicals in F2-laser-irradiated amorphous SiO2.
abstract: A procedure to produce stable hydroperoxy radicals (HO*2) in bulk amorphous SiO(2) (a-SiO(2)) has been developed. Oxygen molecules incorporated in the interstitial voids in a-SiO(2) react with mobile hydrogen atoms (H(0)) generated by the photolysis of silanol (SiOH) groups with F(2)-laser light (lambda = 157 nm, hnu = 7.9 eV), resulting in the efficient creation of interstitial HO*2. The high yield of HO*2 suggests that the collisions of the reaction intermediate with the void wall play an important role in dissipating the excess energy of the intermediate instead of the triple collision observed in the gas phase reaction. The resultant HO*2 is thermally stable up to 100 degrees C.
authors.affiliation: Transparent Electro-Active Materials Project, ERATO-SORST, Japan Science and Technology Agency, Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama. kaji2@lucid.msl.titech.ac.jp
authors.forename: Koichi
authors.initials: K
authors.lastname: Kajihara
authors.forename: Masahiro
authors.initials: M
authors.lastname: Hirano
authors.forename: Linards
authors.initials: L
authors.lastname: Skuja
authors.forename: Hideo
authors.initials: H
authors.lastname: Hosono