title: Resonant intrinsic spin hall effect in p-type GaAs quantum well structure.
abstract: We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.
authors.affiliation: Department of Physics, and Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China.
authors.forename: Xi
authors.initials: X
authors.lastname: Dai
authors.forename: Zhong
authors.initials: Z
authors.lastname: Fang
authors.forename: Yu-Gui
authors.initials: YG
authors.lastname: Yao
authors.forename: Fu-Chun
authors.initials: FC
authors.lastname: Zhang