title: Evidence for p-type doping of InN.
abstract: The first evidence of successful p-type doping of InN is presented. It is shown that InN:Mg films consist of a p-type bulk region with a thin n-type inversion layer at the surface that prevents electrical contact to the bulk. Capacitance-voltage measurements indicate a net concentration of ionized acceptors below the -type surface. Irradiation with 2 MeV He+ ions is used to convert the bulk of InN:Mg from p to n-type, at which point photoluminescence is recovered. The conversion is well explained by a model assuming two parallel conducting layers (the surface and the bulk) in the films.
authors.affiliation: Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: R E
authors.initials: RE
authors.lastname: Jones
authors.forename: K M
authors.initials: KM
authors.lastname: Yu
authors.forename: S X
authors.initials: SX
authors.lastname: Li
authors.forename: W
authors.initials: W
authors.lastname: Walukiewicz
authors.forename: J W
authors.initials: JW
authors.lastname: Ager
authors.forename: E E
authors.initials: EE
authors.lastname: Haller
authors.forename: H
authors.initials: H
authors.lastname: Lu
authors.forename: W J
authors.initials: WJ
authors.lastname: Schaff