title: Solution-processed silicon films and transistors.
abstract: The use of solution processes-as opposed to conventional vacuum processes and vapour-phase deposition-for the fabrication of electronic devices has received considerable attention for a wide range of applications, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors, some of which have mobilities comparable to that of amorphous silicon (a-Si); but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported. This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon (poly-Si) films by both spin-coating and ink-jet printing, from which we fabricate TFTs with mobilities of 108 cm2 V(-1) s(-1) and 6.5 cm2 V(-1) s(-1), respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a-Si TFTs (< or = 1 cm2 V(-1) s(-1)).
authors.affiliation: Technology Platform Research Centre, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399-0293 Japan.
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Shimoda
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Matsuki
authors.forename: Masahiro
authors.initials: M
authors.lastname: Furusawa
authors.forename: Takashi
authors.initials: T
authors.lastname: Aoki
authors.forename: Ichio
authors.initials: I
authors.lastname: Yudasaka
authors.forename: Hideki
authors.initials: H
authors.lastname: Tanaka
authors.forename: Haruo
authors.initials: H
authors.lastname: Iwasawa
authors.forename: Daohai
authors.initials: D
authors.lastname: Wang
authors.forename: Masami
authors.initials: M
authors.lastname: Miyasaka
authors.forename: Yasumasa
authors.initials: Y
authors.lastname: Takeuchi