Thermal decomposition mechanism of disilane.
Thermal decomposition of disilane was investigated using time-of-flight (TOF) mass spectrometry coupled with vacuum ultraviolet single-photon ionization (VUV-SPI) at a temperature range of 675-740 K and total pressure of 20-40 Torr. Si(n)H(m) species were photoionized by VUV radiation at 10.5 eV (118 nm). Concentrations of disilane and trisilane during thermal decomposition of disilane were quantitatively measured using the VUV-SPI method. Formation of Si(2)H(4) species was also examined. On the basis of pressure-dependent rate constants of disilane dissociation reported by Matsumoto et al. [J. Phys. Chem. A 2005, 109, 4911], kinetic simulation including gas-phase and surface reactions was performed to analyze thermal decomposition mechanisms of disilane. The branching ratio for (R1) Si(2)H(6) --> SiH(4) + SiH(2)/(R2) Si(2)H(6) --> H(2) + H(3)SiSiH was derived by the pressure-dependent rate constants. Temperature and reaction time dependences of disilane loss and formation of trisilane were well represented by the kinetic simulation. Comparison between the experimental results and the kinetic simulation results suggested that about 70% of consumed disilane was converted to trisilane, which was observed as one of the main reaction products under the present experimental conditions.
Yoshida
Kazumasa
K
Department of Chemical System Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656, Japan.
Matsumoto
Keiji
K
Oguchi
Tatsuo
T
Tonokura
Kenichi
K
Koshi
Mitsuo
M