title: Precise measurement of local strain fields with energy-unfiltered convergent-beam electron diffraction.
abstract: A simple and robust method to precisely determine local strain fields using energy-unfiltered convergent-beam electron diffraction is presented. This method involves the subtraction of background intensity, the extraction of higher-order Laue-zone lines by tracing using a Radon transformation and a system of analytical strain determination without the need for an optimization routine such as chi2-based minimization. As an example, the measurement of residual strain in a silicon-on-insulator wafer is demonstrated. It is found from micro-Raman spectroscopy analysis that, at the nanometre scale, this measurement succeeds with an accuracy of 0.06%.
authors.affiliation: Department of Physics, Tokyo University of Science, Tokyo 162-8601, Japan. yamazaki@rs.kagu.tus.ac.jp
authors.forename: Takashi
authors.initials: T
authors.lastname: Yamazaki
authors.forename: Tomoko
authors.initials: T
authors.lastname: Isaka
authors.forename: Koji
authors.initials: K
authors.lastname: Kuramochi
authors.forename: Iwao
authors.initials: I
authors.lastname: Hashimoto
authors.forename: Kazuto
authors.initials: K
authors.lastname: Watanabe