title: New growth mode through decorated twin boundaries.
abstract: Scanning tunneling microscopy and low energy electron diffraction were used to investigate the growth of partly twinned Ir thin films on Ir(111). A transition from the expected layer-by-layer to a defect dominated growth mode with a fixed lateral length scale and increasing roughness is observed. During growth, the majority of the film is stably transformed to twinned stacking. This transition is initiated by the energetic avoidance of the formation of intrinsic stacking faults compared to two independent twin faults. The atomistic details of the defect kinetics are outlined.
authors.affiliation: I. Physikalisches Institut, RWTH-Aachen University, 52056 Aachen, Germany.
authors.forename: Sebastian
authors.initials: S
authors.lastname: Bleikamp
authors.forename: Arne
authors.initials: A
authors.lastname: Thoma
authors.forename: Celia
authors.initials: C
authors.lastname: Polop
authors.forename: Gerhard
authors.initials: G
authors.lastname: Pirug
authors.forename: Udo
authors.initials: U
authors.lastname: Linke
authors.forename: Thomas
authors.initials: T
authors.lastname: Michely