Precise measurement of local strain fields with energy-unfiltered convergent-beam electron diffraction.
A simple and robust method to precisely determine local strain fields using energy-unfiltered convergent-beam electron diffraction is presented. This method involves the subtraction of background intensity, the extraction of higher-order Laue-zone lines by tracing using a Radon transformation and a system of analytical strain determination without the need for an optimization routine such as chi2-based minimization. As an example, the measurement of residual strain in a silicon-on-insulator wafer is demonstrated. It is found from micro-Raman spectroscopy analysis that, at the nanometre scale, this measurement succeeds with an accuracy of 0.06%.
Yamazaki
Takashi
T
Department of Physics, Tokyo University of Science, Tokyo 162-8601, Japan. yamazaki@rs.kagu.tus.ac.jp
Isaka
Tomoko
T
Kuramochi
Koji
K
Hashimoto
Iwao
I
Watanabe
Kazuto
K