Wetting of Pb on oxidized micropatterned Si wafers.
The wetting of lead on silicon wafers with regularly patterned holes, and covered by native silica, has been investigated at 610 K under ultrahigh vacuum conditions. The advancing and receding macroscopic contact angles have been measured by slowly compressing and stretching a liquid lead bridge between two identically patterned substrates. These angles are shown to depend on the distribution of the holes in the wafers and the continuity of the triple line.
Chatain
Dominique
D
Centre de Recherche en Matière Condensée et Nanosciences - CNRS, Laboratoire Propre du CNRS associé aux Universités d'Aix-Marseille 2 et 3, Campus de Luminy, case 913, 13288 Marseille Cedex 9, France. chatain@crmcn.univ-mrs.fr
Lesueur
Cécile
C
Baland
Jean-Pierre
JP