title: Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As.
abstract: Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.
authors.affiliation: Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Yamanouchi
authors.forename: D
authors.initials: D
authors.lastname: Chiba
authors.forename: F
authors.initials: F
authors.lastname: Matsukura
authors.forename: T
authors.initials: T
authors.lastname: Dietl
authors.forename: H
authors.initials: H
authors.lastname: Ohno