Electronic confinement and coherence in patterned epitaxial graphene.
Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.
Berger
Claire
C
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA.
Song
Zhimin
Z
Li
Xuebin
X
Wu
Xiaosong
X
Brown
Nate
N
Naud
Cécile
C
Mayou
Didier
D
Li
Tianbo
T
Hass
Joanna
J
Marchenkov
Alexei N
AN
Conrad
Edward H
EH
First
Phillip N
PN
de Heer
Walt A
WA