Unified description of bulk and interface-enhanced spin pumping.
We describe a mechanism for generating nonequilibrium electron-spin accumulation in semiconductors or metals by rf magnetic field pumping. With a semiclassical model we show that a rotating applied magnetic field (or the processing magnetization inside a weak ferromagnet) generates a dc spin accumulation. For bulk systems this spin accumulation is in general given by a small fraction of h omega, where omega is the rotation or precession frequency. With the addition of a neighboring, field-free region, and allowing for the diffusion of spins across the interface, the spin accumulation is dramatically enhanced towards h omega near the interface. The interface-enhanced spin accumulation obtained within our bulk-oriented model is surprisingly similar to predictions based on interface-scattering theory [A. Brataas, Phys. Rev. B 66, 060404(R) (2002)].
Watts
S M
SM
Physics of Nanodevices, Materials Science Centre, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Grollier
J
J
van der Wal
C H
CH
van Wees
B J
BJ