title: Full counting statistics for a single-electron transistor: nonequilibrium effects at intermediate conductance.
abstract: We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.
authors.affiliation: Institut für Theoretische Festköperphysik, Universität Karlsruhe, 76128 Karlsruhe, Germany.
authors.forename: Yasuhiro
authors.initials: Y
authors.lastname: Utsumi
authors.forename: Dmitri S
authors.initials: DS
authors.lastname: Golubev
authors.forename: Gerd
authors.initials: G
authors.lastname: Schön