title: Electronic confinement and coherence in patterned epitaxial graphene.
abstract: Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.
authors.affiliation: School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA.
authors.forename: Claire
authors.initials: C
authors.lastname: Berger
authors.forename: Zhimin
authors.initials: Z
authors.lastname: Song
authors.forename: Xuebin
authors.initials: X
authors.lastname: Li
authors.forename: Xiaosong
authors.initials: X
authors.lastname: Wu
authors.forename: Nate
authors.initials: N
authors.lastname: Brown
authors.forename: Cécile
authors.initials: C
authors.lastname: Naud
authors.forename: Didier
authors.initials: D
authors.lastname: Mayou
authors.forename: Tianbo
authors.initials: T
authors.lastname: Li
authors.forename: Joanna
authors.initials: J
authors.lastname: Hass
authors.forename: Alexei N
authors.initials: AN
authors.lastname: Marchenkov
authors.forename: Edward H
authors.initials: EH
authors.lastname: Conrad
authors.forename: Phillip N
authors.initials: PN
authors.lastname: First
authors.forename: Walt A
authors.initials: WA
authors.lastname: de Heer