title: Quantum control of donor electrons at the Si-SiO2 interface.
abstract: Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from subpicoseconds to nanoseconds depending on the distance (approximately 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.
authors.affiliation: Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA.
authors.forename: M J
authors.initials: MJ
authors.lastname: Calderón
authors.forename: Belita
authors.initials: B
authors.lastname: Koiller
authors.forename: Xuedong
authors.initials: X
authors.lastname: Hu
authors.forename: S
authors.initials: S
authors.lastname: Das Sarma