title: Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings.
abstract: This paper presents the use of a novel fabrication technique to produce three-dimensional (3D) nanostructures. The process is based on conventional microfabrication techniques to create a planar pattern in an InGaAs/GaAs bilayer that self-assembles into 3D structures during a wet etch release. The nanostructures are proposed to function as nanosprings for electromechanical sensors. Nanomanipulation inside a scanning electron microscope (SEM) was conducted to probe the structures for mechanical characterization. The results were validated by simulation.
authors.affiliation: Institute of Robotics and Intelligent Systems, ETH Zurich, 8092 Zurich, Switzerland.
authors.forename: Dominik J
authors.initials: DJ
authors.lastname: Bell
authors.forename: Lixin
authors.initials: L
authors.lastname: Dong
authors.forename: Bradley J
authors.initials: BJ
authors.lastname: Nelson
authors.forename: Matthias
authors.initials: M
authors.lastname: Golling
authors.forename: Li
authors.initials: L
authors.lastname: Zhang
authors.forename: Detlev
authors.initials: D
authors.lastname: Grützmacher
mesh_terms: D001152:Arsenicals / Q000032:analysis / Q000737:chemistry*; D003198:Computer Simulation; D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004548:Elasticity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000032:analysis / Q000737:chemistry*; D007204:Indium / Q000032:analysis / Q000737:chemistry*; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D013314:Stress, Mechanical
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide