Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings.
This paper presents the use of a novel fabrication technique to produce three-dimensional (3D) nanostructures. The process is based on conventional microfabrication techniques to create a planar pattern in an InGaAs/GaAs bilayer that self-assembles into 3D structures during a wet etch release. The nanostructures are proposed to function as nanosprings for electromechanical sensors. Nanomanipulation inside a scanning electron microscope (SEM) was conducted to probe the structures for mechanical characterization. The results were validated by simulation.
Bell
Dominik J
DJ
Institute of Robotics and Intelligent Systems, ETH Zurich, 8092 Zurich, Switzerland.
Dong
Lixin
L
Nelson
Bradley J
BJ
Golling
Matthias
M
Zhang
Li
L
Grützmacher
Detlev
D
D001152:Arsenicals / Q000032:analysis / Q000737:chemistry*; D003198:Computer Simulation; D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004548:Elasticity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000032:analysis / Q000737:chemistry*; D007204:Indium / Q000032:analysis / Q000737:chemistry*; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D013314:Stress, Mechanical
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide