title: Memory devices based on lanthanide (Sm3+, Eu3+, Gd3+) complexes.
abstract: Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.
authors.affiliation: State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, and Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022, P. R. China.
authors.forename: Junfeng
authors.initials: J
authors.lastname: Fang
authors.forename: Han
authors.initials: H
authors.lastname: You
authors.forename: Jiangshan
authors.initials: J
authors.lastname: Chen
authors.forename: Jian
authors.initials: J
authors.lastname: Lin
authors.forename: Dongge
authors.initials: D
authors.lastname: Ma