Dislocation multi-junctions and strain hardening.
At the microscopic scale, the strength of a crystal derives from the motion, multiplication and interaction of distinctive line defects called dislocations. First proposed theoretically in 1934 (refs 1-3) to explain low magnitudes of crystal strength observed experimentally, the existence of dislocations was confirmed two decades later. Much of the research in dislocation physics has since focused on dislocation interactions and their role in strain hardening, a common phenomenon in which continued deformation increases a crystal's strength. The existing theory relates strain hardening to pair-wise dislocation reactions in which two intersecting dislocations form junctions that tie the dislocations together. Here we report that interactions among three dislocations result in the formation of unusual elements of dislocation network topology, termed 'multi-junctions'. We first predict the existence of multi-junctions using dislocation dynamics and atomistic simulations and then confirm their existence by transmission electron microscopy experiments in single-crystal molybdenum. In large-scale dislocation dynamics simulations, multi-junctions present very strong, nearly indestructible, obstacles to dislocation motion and furnish new sources for dislocation multiplication, thereby playing an essential role in the evolution of dislocation microstructure and strength of deforming crystals. Simulation analyses conclude that multi-junctions are responsible for the strong orientation dependence of strain hardening in body-centred cubic crystals.
Bulatov
Vasily V
VV
Lawrence Livermore National Laboratory, University of California, Livermore, California 94550, USA. bulatov1@llnl.gov
Hsiung
Luke L
LL
Tang
Meijie
M
Arsenlis
Athanasios
A
Bartelt
Maria C
MC
Cai
Wei
W
Florando
Jeff N
JN
Hiratani
Masato
M
Rhee
Moon
M
Hommes
Gregg
G
Pierce
Tim G
TG
de la Rubia
Tomas Diaz
TD