A Novel real-time dosimetry technique based on radiation-induced surface activation.
A novel real-time dosimetry technique based on radiation-induced surface activation (RISA) phenomenon has been proposed that is similar to ultraviolet surface activation known typically in anatase-type titanium dioxide. It has been found that the RISA phenomenon occurs on the surface of an oxidised semiconductor or oxidised metal film by radiation incidence. The RISA dosemeter has the following advantageous characteristics: (1) output of the RISA dosemeter is proportional to the dose equivalent rate in harsh environments, (2) fluctuation of output of the RISA dosemeter irradiated by (60)Co gamma-rays is <2.5% beyond the total dose equivalent of 1.8 MSv, (3) the transient current observed in simple insulators for a few seconds or more after onset of irradiation was not detected in the RISA dosemeter and (4) this dosemeter worked well even at high temperatures.
Tomozawa
H
H
Kyosemi Corporation, Toiso 385-31, Eniwa 061-1405, Japan. tomozawa@kyosemi.co.jp
Takamasa
T
T
Okamoto
K
K
Tsujimura
N
N
Date
H
H
Nakata
J
J
D003199:Computer Systems; D004307:Dose-Response Relationship, Radiation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D011829:Radiation Dosage; D012666:Semiconductors; D013499:Surface Properties; D013819:Thermoluminescent Dosimetry / Q000295:instrumentation* / Q000379:methods*