title: Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes.
abstract: We present a systematic study on low-frequency current fluctuations of nanodevices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g., Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.
authors: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. yming@us.ibm.com
authors: Yu-Ming
authors: YM
authors: Lin
authors: Joerg
authors: J
authors: Appenzeller
authors: Joachim
authors: J
authors: Knoch
authors: Zhihong
authors: Z
authors: Chen
authors: Phaedon
authors: P
authors: Avouris