title: A single electron transistor on an atomic force microscope probe.
abstract: We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.
authors: Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96, Gothenburg, Sweden. henrik.brenning@mc2.chalmers.se
authors: Henrik T A
authors: HT
authors: Brenning
authors: Sergey E
authors: SE
authors: Kubatkin
authors: Donats
authors: D
authors: Erts
authors: Sergey G
authors: SG
authors: Kafanov
authors: Thilo
authors: T
authors: Bauch
authors: Per
authors: P
authors: Delsing