Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area.
Ni/4H-SiC Schottky photodiodes of 5 mm x 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nm to 30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV.
Hu
Jun
J
SiCLAB, Department of Electrical and Computer Engineering, Rutgers University, New Jersey 08854, USA.
Xin
Xiaobin
X
Zhao
Jian H
JH
Yan
Feng
F
Guan
Bing
B
Seely
John
J
Kjornrattanawanich
Benjawan
B