title: Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides.
abstract: We study whether helium ion implantation can reduce the carrier lifetime and thus reduce the density of two-photon-absorption-generated free carriers. Our experiments and theoretical model show that helium ion implantation into silicon waveguides can successfully reduce the free-carrier losses and allow net gain to be attained by cw-pumped stimulated Raman scattering without requiring reverse bias to remove the photogenerated free carriers.
authors: Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China. yliu@ee.cuhk.edu.hk
authors: Y
authors: Y
authors: Liu
authors: H K
authors: HK
authors: Tsang