title: Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area.
abstract: Ni/4H-SiC Schottky photodiodes of 5 mm x 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nm to 30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV.
authors: SiCLAB, Department of Electrical and Computer Engineering, Rutgers University, New Jersey 08854, USA.
authors: Jun
authors: J
authors: Hu
authors: Xiaobin
authors: X
authors: Xin
authors: Jian H
authors: JH
authors: Zhao
authors: Feng
authors: F
authors: Yan
authors: Bing
authors: B
authors: Guan
authors: John
authors: J
authors: Seely
authors: Benjawan
authors: B
authors: Kjornrattanawanich