Field-effect transistors assembled from functionalized carbon nanotubes.
We have fabricated field-effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing a hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices thus fabricated show excellent electrical characteristics.
Klinke
Christian
C
IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA.
Hannon
James B
JB
Afzali
Ali
A
Avouris
Phaedon
P