Gate-controlled rectifying behavior in C70@SWNT networks.
We report the gate-controlled rectification behavior in C(70)@SWNT networks at room temperature in air. The electrical transport characteristics can be fitted well with the conventional Schottky diode model. The origin of the rectifying behavior in fullerene peapod networks device is qualitatively discussed. This paper demonstrates a strategy for diode fabrication based on peapod networks.
Guo
Ao
A
Department of Microelectronics, Peking University, Beijing, PR China.
Fu
Yunyi
Y
Liu
Jia
J
Guan
Lunhui
L
Shi
Zujin
Z
Gu
Zhennan
Z
Huang
Ru
R
Zhang
Xing
X