X-ray reflectivity study of semiconductor interfaces.
The results of an X-ray reflectivity study of thick AlAs-AlGaAs and thin Ge-Si-Ge multilayers grown using metal-organic vapour-phase epitaxy and ion-beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si-on-Ge interface is sharp, an Si(0.4)Ge(0.6) alloy is formed at the Ge-on-Si interface. In the case of the III-V semiconductor, the AlAs-on-AlGaAs interface shows much greater roughness than that observed in the AlGaAs-on-AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X-ray reflectivity data.
Sanyal
M K
MK
Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Calcutta-700 064, India.
Datta
A
A
Banerjee
S
S
Srivastava
A K
AK
Arora
B M
BM
Kanakaraju
S
S
Mohan
S
S