title: On the off-Bragg reflectivity enhancement in dynamical multiple diffraction of X-rays by an In(0.5)Ga(0.5)P/GaAs heteroepitaxial structure.
abstract: The effect of dynamical interactions between reflections involved in 000/111/220 multiple diffraction by an In(0.5)Ga(0.5)P/GaAs heteroepitaxial structure was observed, which significantly increases the intensity of the (111) reflection in the region of the total (220) reflection from the substrate during Renninger-like scanning. The amplitude of the peak is roughly five times as great as the peak of detoured excitation for ideal GaAs. Possible applications of the observed feature in synchrotron-radiation-based studies are discussed.
authors.affiliation: A. V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii Prospekt 59, 117333 Moscow, Russia.
authors.forename: M V
authors.initials: MV
authors.lastname: Kovalchuk
authors.forename: A Y
authors.initials: AY
authors.lastname: Kreines
authors.forename: L V
authors.initials: LV
authors.lastname: Samoilova
authors.forename: A M
authors.initials: AM
authors.lastname: Mel'nikov