title: Identification of the carbon antisite-vacancy pair in 4H-SiC.
abstract: The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacancy pair in the negative charge state (C(Si)V-(C)) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.
authors.affiliation: University of Tsukuba, Tsukuba 305-8550, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Umeda
authors.forename: N T
authors.initials: NT
authors.lastname: Son
authors.forename: J
authors.initials: J
authors.lastname: Isoya
authors.forename: E
authors.initials: E
authors.lastname: Janzén
authors.forename: T
authors.initials: T
authors.lastname: Ohshima
authors.forename: N
authors.initials: N
authors.lastname: Morishita
authors.forename: H
authors.initials: H
authors.lastname: Itoh
authors.forename: A
authors.initials: A
authors.lastname: Gali
authors.forename: M
authors.initials: M
authors.lastname: Bockstedte