title: X-ray reflectivity study of semiconductor interfaces.
abstract: The results of an X-ray reflectivity study of thick AlAs-AlGaAs and thin Ge-Si-Ge multilayers grown using metal-organic vapour-phase epitaxy and ion-beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si-on-Ge interface is sharp, an Si(0.4)Ge(0.6) alloy is formed at the Ge-on-Si interface. In the case of the III-V semiconductor, the AlAs-on-AlGaAs interface shows much greater roughness than that observed in the AlGaAs-on-AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X-ray reflectivity data.
authors.affiliation: Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Calcutta-700 064, India.
authors.forename: M K
authors.initials: MK
authors.lastname: Sanyal
authors.forename: A
authors.initials: A
authors.lastname: Datta
authors.forename: S
authors.initials: S
authors.lastname: Banerjee
authors.forename: A K
authors.initials: AK
authors.lastname: Srivastava
authors.forename: B M
authors.initials: BM
authors.lastname: Arora
authors.forename: S
authors.initials: S
authors.lastname: Kanakaraju
authors.forename: S
authors.initials: S
authors.lastname: Mohan