title: Precise dose evaluation using a commercial phototransistor as a radiation detector.
abstract: An experimental arrangement and a circuitry based on an NPN phototransistor-type silicon radiation detector have been used for evaluating the X-ray beam dose in the diagnostic range. The circuitry was built to allow alteration of the electric field in the phototransistor internal structure, with some devices that have an available base connection. By changing the transistor base bias it is possible to alter its operation point to obtain a response gain from the selected photon energy range. In this way we have made an electronic energy-domain discretisation and we are investigating a model to calculate the dose contribution from each energy discretised into 10 keV steps. The method has been tested in filtered radiation beams generated from an HF-160 Pantak X-ray unit and compared with the usual dosimetry method. Our results have demonstrated that it is possible to make such a dose deconvolution from 40 to 140 keV energies by controlling the phototransistor base bias properly.
authors.affiliation: Centro Regional de Ciências Nucleares-CNEN, Av. Prof. Luiz Freire, 200, Cidade Universitaria, Recife-PE, CEP 50740-540, Brazil. lasantos@cnen.gov.br
authors.forename: L A P
authors.initials: LA
authors.lastname: Santos
authors.forename: F R
authors.initials: FR
authors.lastname: Barros
authors.forename: J A
authors.initials: JA
authors.lastname: Filho
authors.forename: E F
authors.initials: EF
authors.lastname: da Silva
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D010783:Photometry / Q000295:instrumentation* / Q000379:methods; D011829:Radiation Dosage; D011874:Radiometry / Q000295:instrumentation* / Q000379:methods; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014173:Transistors, Electronic