title: Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti)O(3) thin films.
abstract: Domain wall motion during polarization switching in ferroelectric thin films is fundamentally important and poses challenges for both experiments and modeling. We have visualized the switching of a Pb(Zr, Ti)O(3) capacitor using time-resolved x-ray microdiffraction. The structural signatures of switching include a reversal in the sign of the piezoelectric coefficient and a change in the intensity of x-ray reflections. The propagation of polarization domain walls is highly reproducible from cycle to cycle of the electric field. Domain wall velocities of 40 m s(-1) are consistent with the results of other methods, but are far less than saturation values expected at high electric fields.
authors.affiliation: Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA.
authors.forename: Alexei
authors.initials: A
authors.lastname: Grigoriev
authors.forename: Dal-Hyun
authors.initials: DH
authors.lastname: Do
authors.forename: Dong Min
authors.initials: DM
authors.lastname: Kim
authors.forename: Chang-Beom
authors.initials: CB
authors.lastname: Eom
authors.forename: Bernhard
authors.initials: B
authors.lastname: Adams
authors.forename: Eric M
authors.initials: EM
authors.lastname: Dufresne
authors.forename: Paul G
authors.initials: PG
authors.lastname: Evans