On the off-Bragg reflectivity enhancement in dynamical multiple diffraction of X-rays by an In(0.5)Ga(0.5)P/GaAs heteroepitaxial structure.
The effect of dynamical interactions between reflections involved in 000/111/220 multiple diffraction by an In(0.5)Ga(0.5)P/GaAs heteroepitaxial structure was observed, which significantly increases the intensity of the (111) reflection in the region of the total (220) reflection from the substrate during Renninger-like scanning. The amplitude of the peak is roughly five times as great as the peak of detoured excitation for ideal GaAs. Possible applications of the observed feature in synchrotron-radiation-based studies are discussed.
Kovalchuk
M V
MV
A. V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii Prospekt 59, 117333 Moscow, Russia.
Kreines
A Y
AY
Samoilova
L V
LV
Mel'nikov
A M
AM