Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti)O(3) thin films.
Domain wall motion during polarization switching in ferroelectric thin films is fundamentally important and poses challenges for both experiments and modeling. We have visualized the switching of a Pb(Zr, Ti)O(3) capacitor using time-resolved x-ray microdiffraction. The structural signatures of switching include a reversal in the sign of the piezoelectric coefficient and a change in the intensity of x-ray reflections. The propagation of polarization domain walls is highly reproducible from cycle to cycle of the electric field. Domain wall velocities of 40 m s(-1) are consistent with the results of other methods, but are far less than saturation values expected at high electric fields.
Grigoriev
Alexei
A
Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA.
Do
Dal-Hyun
DH
Kim
Dong Min
DM
Eom
Chang-Beom
CB
Adams
Bernhard
B
Dufresne
Eric M
EM
Evans
Paul G
PG