title: Gate-controlled rectifying behavior in C70@SWNT networks.
abstract: We report the gate-controlled rectification behavior in C(70)@SWNT networks at room temperature in air. The electrical transport characteristics can be fitted well with the conventional Schottky diode model. The origin of the rectifying behavior in fullerene peapod networks device is qualitatively discussed. This paper demonstrates a strategy for diode fabrication based on peapod networks.
authors.affiliation: Department of Microelectronics, Peking University, Beijing, PR China.
authors.forename: Ao
authors.initials: A
authors.lastname: Guo
authors.forename: Yunyi
authors.initials: Y
authors.lastname: Fu
authors.forename: Jia
authors.initials: J
authors.lastname: Liu
authors.forename: Lunhui
authors.initials: L
authors.lastname: Guan
authors.forename: Zujin
authors.initials: Z
authors.lastname: Shi
authors.forename: Zhennan
authors.initials: Z
authors.lastname: Gu
authors.forename: Ru
authors.initials: R
authors.lastname: Huang
authors.forename: Xing
authors.initials: X
authors.lastname: Zhang