Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors.
We report a new dosimetry concept that is built on an earlier integrated sensor concept by our group at University of Washington to integrate a radiation-dosimetry-quality Al2O3:C and a high quantum-efficiency GaN-based p-i-n photodiode on one side, and light emitting diodes (LEDs) on the opposite side as the stimulation source. The performance of the sensor has been evaluated by computer simulation, the performance of GaN photodiodes and studying the GaN films. The absorption spectrum of the GaN film was measured and indicated that the GaN photodiodes would not respond to the output wavelengths of the stimulating LEDs. The electrical properties and the performance of GaN p-i-n photodiode under irradiation were simulated. The results showed that the sensor offered comparable radiation sensitivity to current technologies and could be operated in active mode.
Chen
Tai-Chang
TC
Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA. tcchen@ee.washington.edu
Poochinda
Kunakorn
K
Stoebe
Thomas G
TG
D000537:Aluminum Oxide / Q000737:chemistry* / Q000528:radiation effects*; D004307:Dose-Response Relationship, Radiation; D004563:Electrochemistry / Q000295:instrumentation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects*; D008027:Light; D008422:Materials Testing; D010777:Photochemistry / Q000295:instrumentation; D011829:Radiation Dosage; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D018511:Systems Integration; D013819:Thermoluminescent Dosimetry / Q000295:instrumentation* / Q000379:methods; D014159:Transducers
C473348:gallium nitride; D005708:Gallium; D000537:Aluminum Oxide