title: Relativistic computational investigation: the geometries and electronic properties of TaSi(n)+ (n = 1-13, 16) clusters.
abstract: The equilibrium geometries, stabilities, and electronic properties of the TaSi(n)+ (n = 1-13, 16) clusters are investigated systematically by using the relativistic density functional method with generalized gradient approximation. The small-sized TaSi(n)+ clusters with slight geometrical adjustments basically keep the frameworks that are analogous to the neutrals while the medium-sized charged clusters significantly deform the neutral geometries, which are confirmed by the calculated AIP and VIP values. Furthermore, the optimized geometries of the charged clusters agree with the experimental results of Hiura and co-workers (Hiura, H.; Miyazaki, T.; Kanayama, T. Phys. Rev. Lett. 2001, 86, 1733). The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gaps of the charged clusters are generally increased as the cluster size goes from n = 1 to 13; and the large HOMO-LUMO gaps of charged clusters resulting from the positive charge indicate that their chemical stabilities are stronger than their neutral counterparts, especially for n = 4, 6, and 7 clusters. Additionally, the contributions of the d orbitals of the Ta atom to the HOMO and LUMO reveal that the chemical activity of the d orbitals of the Ta atom decreases gradually as the number of silicon atoms increases. This interesting finding is in good agreement with the recent experimental results on the reactive activities of the H2O and transition-metal silicon clusters (Koyasu, K.; Akutsu, M.; Mitsui, M.; Nakajima, A. J. Am. Chem. Soc. 2005, 127, 4998). Generally, the positive charge significantly influences the electronic and geometric structures of the charged clusters. Finally, the most stable neutral and charged TaSi16 clusters are found to be fullerene-like structures and the HOMO-LUMO gap in charged form is detectable experimentally.
authors.affiliation: Institute of Photonics & Photon-Technology and Department of Physics, Northwest University, Xi'an 710069, China.
authors.forename: Ping
authors.initials: P
authors.lastname: Guo
authors.forename: Zhao-Yu
authors.initials: ZY
authors.lastname: Ren
authors.forename: A-Ping
authors.initials: AP
authors.lastname: Yang
authors.forename: Ju-Guang
authors.initials: JG
authors.lastname: Han
authors.forename: Jiang
authors.initials: J
authors.lastname: Bian
authors.forename: Guang-Hou
authors.initials: GH
authors.lastname: Wang