Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure.
We present a study of the light extraction from CdSe/ZnS core/shell colloidal quantum dot thin films deposited on quantum well InGaN/GaN photonic crystal structures. The two-dimensional photonic crystal defined by nanoimprint lithography is used to efficiently extract the guided light modes originating from both the quantum dot thin films and the InGaN quantum wells. Far-field photoluminescence spectra are used to measure the extraction enhancement factor of the quantum dot emission (x1.4). Microphotoluminescence measurements show that the guided mode effective extraction lengths range between 70 and 180 microm, depending on the wavelength of light.
Diana
Frédéric S
FS
Materials Department, Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, California 93106, USA. frederic@engineering.ucsb.edu
David
Aurélien
A
Meinel
Ines
I
Sharma
Rajat
R
Weisbuch
Claude
C
Nakamura
Shuji
S
Petroff
Pierre M
PM
D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008027:Light; D008422:Materials Testing; D008956:Models, Chemical; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010777:Photochemistry / Q000295:instrumentation* / Q000379:methods; D045663:Quantum Dots; D012666:Semiconductors
C473348:gallium nitride; D005708:Gallium