Calculation of vertical correlation probability in Ge/Si(001) shallow island quantum dot multilayer systems.
We investigate the behavior of the island vertical pairing probability in multilayer systems of Ge island quantum dots (QDs) in Si(001). By combining a simple kinetic rate model with our previously reported atomistic simulation results on the nature of the stress field from buried shallow Ge islands having {105}-oriented sidewalls, we derive an analytical expression for correlation probability as a function of the parameters characterizing the multi-QD systems. The approach is based upon continuum mechanochemical potential model, which allows one to introduce necessary elements of the kinetics of island formation in a simple way. We compare the model predictions with available experimental data and find that the model provides a satisfactory description of the coupling probability. The correlation probability behavior as a function of capping layer thickness, Ge island size, interisland distance, and Ge adatom diffusion length is investigated within the framework of the developed model.
Makeev
Maxim A
MA
Collaboratory for Advanced Computing and Simulations, Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242, USA. mmakeev@mail.arc.nasa.gov
Madhukar
Anupam
A
D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D005857:Germanium / Q000737:chemistry*; D008956:Models, Chemical; D008958:Models, Molecular; D015233:Models, Statistical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*; D013223:Statistics as Topic; D013499:Surface Properties
D005857:Germanium; D012825:Silicon