title: Valley polarization in Si(100) at zero magnetic field.
abstract: The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO(2)/Si(100)/SiO(2) quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Takashina
authors.forename: Y
authors.initials: Y
authors.lastname: Ono
authors.forename: A
authors.initials: A
authors.lastname: Fujiwara
authors.forename: Y
authors.initials: Y
authors.lastname: Takahashi
authors.forename: Y
authors.initials: Y
authors.lastname: Hirayama