New linear-parabolic rate equation for thermal oxidation of silicon.
We propose a new oxidation rate equation for silicon supposing only a diffusion of oxidizing species but not including any rate-limiting step by interfacial reaction. It is supposed that diffusivity is suppressed in a strained oxide region near SiO(2)/Si the interface. The expression of a parabolic constant in the new equation is the same as that of the Deal-Grove model, while a linear constant makes a clear distinction with that of the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layers.
Watanabe
Takanobu
T
Faculty of Science and Engineering, Waseda University, Shinjuku-ku, Tokyo, Japan. watanabe-t@waseda.jp
Tatsumura
Kosuke
K
Ohdomari
Iwao
I