Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: a CNT-gated CNT-FET.
We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultra-small field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate the source-drain current through the s-CNT FET channel. We have also used the m-CNT as an electrical lead. An off-state current lowering was observed when the m-CNT lead was used as a drain electrode.
Lee
Dong Su
DS
Department of Physics, Göteborg University, SE-41296 Göteborg, Sweden.
Svensson
Johannes
J
Lee
Sang Wook
SW
Park
Yung Woo
YW
Campbell
Eleanor E B
EE
D003460:Crystallization / Q000379:methods*; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008839:Microelectrodes; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D012666:Semiconductors; D014173:Transistors, Electronic
D037742:Nanotubes, Carbon