Development of line-shaped optical system for green laser annealing used in the manufacture of low-temperature poly-Si thin-film transistors.
We have developed a new optical system that transforms the circle profile beam generated with near-Gaussian intensity distribution by a pulse green laser (YAG2omega laser; second harmonics of a Q-switched Nd:YAG laser) into a line-profile beam. For homogenization in the longitudinal direction, we employed a waveguide plate-type homogenizer. We successfully reduced interference fringes. In the width direction, the laser beam was focused up to the limited M2 value. This transformed beam has a uniform distribution to within 5% in the longitudinal direction, and it is approximately 100 mm long and 40 microm wide.
Okamoto
Tatsuki
T
Advanced Technology Research and Development Center, Mitsubishi Corporation, Japan. Okamoto.Tatsuki@ah.MitsubishiElectric.co.jp
Morikawa
Kazutoshi
K
Sono
Atsuhiro
A
Sato
Yukio
Y
Nishimae
Junichi
J