title: Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm.
abstract: A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temperature electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width approximately 75 microeV) at ultralow currents, which are assigned to the emission from single excitons and multiexcitons. This approach, which enables the fabrication of efficient nanoscale active devices at 1300 nm, can provide single-photon-emitting diodes for fiber-based quantum cryptography.
authors.affiliation: Ecole Polytechnique Fédérale de Lausanne, Institute of Photonics and Quantum Electronics, Lausanne, Switzerland. monat@physics.usyd.edu.au
authors.forename: Christelle
authors.initials: C
authors.lastname: Monat
authors.forename: Blandine
authors.initials: B
authors.lastname: Alloing
authors.forename: Carl
authors.initials: C
authors.lastname: Zinoni
authors.forename: Lianhe H
authors.initials: LH
authors.lastname: Li
authors.forename: Andrea
authors.initials: A
authors.lastname: Fiore
mesh_terms: D007259:Infrared Rays; D008027:Light; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures; D045663:Quantum Dots; D012666:Semiconductors