Surface chemistry in the atomic layer deposition of TiN films from TiCl4 and ammonia.
The surface chemistry of atomic layer depositions (ALD) of titanium nitride films using alternate doses of TiCl4 and NH3 was characterized by using X-ray photoelectron spectroscopy. The nature of the species deposited by each half-reaction was explored first. Evidence was obtained for the partial loss of chlorine atoms and the reduction of the metal during the adsorption of the TiCl4. Subsequent ammonia treatment removes most of the remaining chlorine and leads to the formation of a nitride. Both half-reactions were proven self-limited, stopping after the deposition of submonolayer quantities of the materials. Repeated ALD cycles were shown to lead to the buildup of thick films. However, those films display a Ti3N4 layer on top of the expected TiN. The data suggest that the reduction of the Ti4+ species may therefore occur during the TiCl4, not NH3, dosing step. The incorporation of impurities in the films was also investigated. Chlorine is only deposited on the surface, and in negligible quantities. This Cl appears to originate from readsorption of the HCl byproduct, and could be removed by light sputtering, heating, or further ammonia treatment. Oxygen incorporation, on the other hand, was unavoidable and was determined to possibly come from diffusion from the underlying substrate.
Tiznado
Hugo
H
Department of Chemistry, University of California, Riverside, California 92521, USA.
Zaera
Francisco
F