Low-temperature preparation of anatase thin films on tantalum.
Titanium dioxide thin films were grown on oxidized Ta surfaces using a cyclic layer-by-layer wet chemistry method: successive-ionic-layer-adsorption-and-reaction (SILAR). Film thicknesses varied monotonically and approximately linearly with the number of cycles. As-grown (AG) films were amorphous and rougher (16.2 nm root-mean-square (rms)) than the Ta substrate (10.2 nm rms). After hydrothermal annealing (AN) at a remarkably low temperature of 393 K, the films exhibited anatase crystallites (10 nm dimensions) and reduced roughness (11.8 nm rms). The atomic composition of both AG and AN films was consistent with that of TiO2 containing no more than 4 atom % carbon. A small Si impurity (<1 atom %) was eliminated by using polypropylene beakers and sample holders in the SILAR steps.
Johnson
Scott E
SE
Department of Chemistry and Biochemistry, Center for Materials Chemistry, University of Texas at Austin, Austin, TX 78712, USA.
Burgoon
Matthew W P
MW
Wang
Qi
Q
White
J M
JM
D008567:Membranes, Artificial; D055095:Optics and Photonics; D010316:Particle Size; D012680:Sensitivity and Specificity; D013057:Spectrum Analysis / Q000379:methods; D013499:Surface Properties; D013635:Tantalum / Q000737:chemistry*; D013696:Temperature; D014025:Titanium / Q000737:chemistry*; D014961:X-Ray Diffraction
D008567:Membranes, Artificial; C009495:titanium dioxide; D013635:Tantalum; D014025:Titanium