Photoluminescence and intrinsic properties of MBE-grown InN nanowires.
The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.
Stoica
Toma
T
Institute of Thin Films and Interfaces (ISG1) and Center of Nanoelectronic Systems for Information Technology (cni), Research Centre Jülich, Germany. t.stoica@fz-juelich.de
Meijers
Ralph J
RJ
Calarco
Raffaella
R
Richter
Thomas
T
Sutter
Eli
E
Lüth
Hans
H
D007204:Indium / Q000737:chemistry*; D049449:Luminescence; D008854:Microscopy, Electron / Q000379:methods; D049329:Nanostructures / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*; D010777:Photochemistry
D007204:Indium; C513701:indium nitride; D009584:Nitrogen