Direct electrical measurement of the self-assembled nickel silicide nanowire.
We present results from the direct electrical measurement of an as-grown nanowire. The nickel silicide (NiSi) nanowire was spontaneously grown across a trench between two electrodes used for measurement. The NiSi nanowire, 58 nm in diameter and 2.9 microm in length, showed a low resistance characteristic of 147.9 Omega. This unique method is straightforward and does not require removal of a grown nanowire to be moved into a measurement environment.
Kim
Joondong
J
Department of Electrical Engineering, University at Buffalo, State University of New York, 14260, USA. joonkim@postech.ac.kr
Anderson
Wayne A
WA
D004553:Electric Conductivity; D049329:Nanostructures; D009532:Nickel / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry*
D017655:Silicon Compounds; C506609:nickel silicide; D009532:Nickel