Channel specific rate constants relevant to the thermal decomposition of disilane.
Rate constants for the thermal dissociation of Si2H6 are predicted with a novel transition state model. The saddle points for dissociation on the Si2H6 potential energy surface are lower in energy than the corresponding separated products, as confirmed by high level ab initio quantum mechanical calculations. Thus, the dissociations of Si2H6 to produce SiH2 + SiH4 (R1) and H3SiSiH + H2 (R2) both proceed through tight inner transition states followed by loose outer transition states. The present "dual" transition state model couples variational phase space theory treatments of the outer transition states with ab initio based fixed harmonic vibrator treatments of the inner transition states to obtain effective numbers of states for the two transition states acting in series. It is found that, at least near room temperature, such a dual transition state model is generally required for the proper description of each of the dissociations. Only at quite high temperatures, i.e., above 2000 K for (R1) and 600 K for (R2), does a single fixed inner transition state provide an adequate description. Similarly, only at quite low temperatures (below 100 and 10 K for (R1) and (R2), respectively) does a single outer transition state provide an adequate description. Pressure dependent rate constants are obtained from solutions to the multichannel master equation. These calculations confirm that dissociation channel (R2) is negligible under conditions relevant to the thermal chemical vapor deposition (CVD) processes. Rate constants for the chemical activation reactions, SiH2 + SiH4 --> Si2H6 (R-1) and SiH2 + SiH4 --> H3SiSiH + H2 (R3), are also evaluated within the dual transition state model. It is found that reaction R3 is the dominant channel for low pressures and high temperatures, i.e., below 100 Torr for temperatures above 1100 K.
Matsumoto
Keiji
K
Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. matsumot@chemsys.t.u-tokyo.ac.jp
Klippenstein
Stephen J
SJ
Tonokura
Kenichi
K
Koshi
Mitsuo
M