title: Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires.
abstract: Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (+/-2 V).
authors.affiliation: Division of Chemistry and Chemical Engineering, California Institute of Technology, MC 127-72, 1200 East California Boulevard, Pasadena, California 91125, USA.
authors.forename: Hossam
authors.initials: H
authors.lastname: Haick
authors.forename: Patrick T
authors.initials: PT
authors.lastname: Hurley
authors.forename: Allon I
authors.initials: AI
authors.lastname: Hochbaum
authors.forename: Peidong
authors.initials: P
authors.lastname: Yang
authors.forename: Nathan S
authors.initials: NS
authors.lastname: Lewis