Effect of diameter variation in a large set of carbon nanotube transistors.
A study involving a large number of carbon nanotube transistors reveals that the nanotube diameter and the metal contact material play key roles in determining the on- and off-state currents of these devices. The results are discussed in terms of the Schottky barrier at the metal-semiconductor junction and the variation of this barrier relative to the alignment of energy levels between the carbon nanotube and the metal.
Tseng
Yu-Chih
YC
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, USA. tsengy@eecs.berkeley.edu
Phoa
Kinyip
K
Carlton
David
D
Bokor
Jeffrey
J
D037742:Nanotubes, Carbon; D010316:Particle Size; D014173:Transistors, Electronic
D037742:Nanotubes, Carbon