title: Defect distribution along single GaN nanowhiskers.
abstract: In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating that the defects responsible for such transitions are distributed inhomogeneously along the column growth direction.
authors.affiliation: Physics Department, University of Bologna, Italy.
authors.forename: Anna
authors.initials: A
authors.lastname: Cavallini
authors.forename: Laura
authors.initials: L
authors.lastname: Polenta
authors.forename: Marco
authors.initials: M
authors.lastname: Rossi
authors.forename: Thomas
authors.initials: T
authors.lastname: Richter
authors.forename: Michel
authors.initials: M
authors.lastname: Marso
authors.forename: Ralph
authors.initials: R
authors.lastname: Meijers
authors.forename: Raffaella
authors.initials: R
authors.lastname: Calarco
authors.forename: Hans
authors.initials: H
authors.lastname: Lüth
mesh_terms: D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry*; D049449:Luminescence; D049329:Nanostructures; D010777:Photochemistry
chemical_list: C473348:gallium nitride; D005708:Gallium