Defect distribution along single GaN nanowhiskers.
In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating that the defects responsible for such transitions are distributed inhomogeneously along the column growth direction.
Cavallini
Anna
A
Physics Department, University of Bologna, Italy.
Polenta
Laura
L
Rossi
Marco
M
Richter
Thomas
T
Marso
Michel
M
Meijers
Ralph
R
Calarco
Raffaella
R
Lüth
Hans
H
D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry*; D049449:Luminescence; D049329:Nanostructures; D010777:Photochemistry
C473348:gallium nitride; D005708:Gallium