title: Photoluminescence and intrinsic properties of MBE-grown InN nanowires.
abstract: The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.
authors.affiliation: Institute of Thin Films and Interfaces (ISG1) and Center of Nanoelectronic Systems for Information Technology (cni), Research Centre Jülich, Germany. t.stoica@fz-juelich.de
authors.forename: Toma
authors.initials: T
authors.lastname: Stoica
authors.forename: Ralph J
authors.initials: RJ
authors.lastname: Meijers
authors.forename: Raffaella
authors.initials: R
authors.lastname: Calarco
authors.forename: Thomas
authors.initials: T
authors.lastname: Richter
authors.forename: Eli
authors.initials: E
authors.lastname: Sutter
authors.forename: Hans
authors.initials: H
authors.lastname: Lüth
mesh_terms: D007204:Indium / Q000737:chemistry*; D049449:Luminescence; D008854:Microscopy, Electron / Q000379:methods; D049329:Nanostructures / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*; D010777:Photochemistry
chemical_list: D007204:Indium; C513701:indium nitride; D009584:Nitrogen