title: Effect of diameter variation in a large set of carbon nanotube transistors.
abstract: A study involving a large number of carbon nanotube transistors reveals that the nanotube diameter and the metal contact material play key roles in determining the on- and off-state currents of these devices. The results are discussed in terms of the Schottky barrier at the metal-semiconductor junction and the variation of this barrier relative to the alignment of energy levels between the carbon nanotube and the metal.
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, USA. tsengy@eecs.berkeley.edu
authors.forename: Yu-Chih
authors.initials: YC
authors.lastname: Tseng
authors.forename: Kinyip
authors.initials: K
authors.lastname: Phoa
authors.forename: David
authors.initials: D
authors.lastname: Carlton
authors.forename: Jeffrey
authors.initials: J
authors.lastname: Bokor
mesh_terms: D037742:Nanotubes, Carbon; D010316:Particle Size; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon