Synthesis and characterization of phase-change nanowires.
Phase-change memory materials have stimulated a great deal of interest although the size-dependent behaviors have not been well studied due to the lack of method for producing their nanoscale structures. We report the synthesis and characterization of GeTe and Sb(2)Te(3) phase-change nanowires via a vapor-liquid-solid growth mechanism. The as-grown GeTe nanowires have three different types of morphologies: single-crystalline straight and helical rhombohedral GeTe nanowires and amorphous curly GeO(2) nanowires. All the Sb(2)Te(3) nanowires are single-crystalline.
Meister
Stefan
S
Department of Materials Science and Engineering, Stanford University, California 94305, USA.
Peng
Hailin
H
McIlwrath
Kevin
K
Jarausch
Konrad
K
Zhang
Xiao Feng
XF
Cui
Yi
Y
D000965:Antimony / Q000737:chemistry; D005857:Germanium / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures; D044367:Phase Transition; D013691:Tellurium / Q000737:chemistry
D005857:Germanium; D000965:Antimony; D013691:Tellurium