title: Synthesis and characterization of phase-change nanowires.
abstract: Phase-change memory materials have stimulated a great deal of interest although the size-dependent behaviors have not been well studied due to the lack of method for producing their nanoscale structures. We report the synthesis and characterization of GeTe and Sb(2)Te(3) phase-change nanowires via a vapor-liquid-solid growth mechanism. The as-grown GeTe nanowires have three different types of morphologies: single-crystalline straight and helical rhombohedral GeTe nanowires and amorphous curly GeO(2) nanowires. All the Sb(2)Te(3) nanowires are single-crystalline.
authors.affiliation: Department of Materials Science and Engineering, Stanford University, California 94305, USA.
authors.forename: Stefan
authors.initials: S
authors.lastname: Meister
authors.forename: Hailin
authors.initials: H
authors.lastname: Peng
authors.forename: Kevin
authors.initials: K
authors.lastname: McIlwrath
authors.forename: Konrad
authors.initials: K
authors.lastname: Jarausch
authors.forename: Xiao Feng
authors.initials: XF
authors.lastname: Zhang
authors.forename: Yi
authors.initials: Y
authors.lastname: Cui
mesh_terms: D000965:Antimony / Q000737:chemistry; D005857:Germanium / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures; D044367:Phase Transition; D013691:Tellurium / Q000737:chemistry
chemical_list: D005857:Germanium; D000965:Antimony; D013691:Tellurium