title: Synthesis and characterization of taper- and rodlike si nanowires on Si(x)Ge(1-x) substrate.
abstract: Taper- and rodlike Si nanowires (SiNWs) are synthesized successfully on Si and Si(0.8)Ge(0.2) substrates. The growth mechanisms of taper- and rodlike SiNWs are proposed to be oxide-assisted growth (OAG) and vapor-liquid-solid (VLS) growth, respectively. For taperlike SiNWs annealed at 1200 degrees C for 3 h, the emission peaks are found at 772, 478, and 413 nm. On the other hand, for rodlike SiNWs annealed at 1200 degrees C for 4 h, emission peaks are found at 783, 516, and 413 nm. From the field-emission measurements, the taperlike Si nanowires exhibit superior field-emission behavior with a turn-on field of 6.3-7.3 V/mum. The field enhancement, beta, has been estimated to be 700 and 1000 at low and high fields, respectively. The excellent field-emission characteristics are attributed to the perfect crystalline structure and the taperlike geometry of the Si nanowires.
authors.affiliation: Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, Republic of China.
authors.forename: Y L
authors.initials: YL
authors.lastname: Chueh
authors.forename: L J
authors.initials: LJ
authors.lastname: Chou
authors.forename: C M
authors.initials: CM
authors.lastname: Hsu
authors.forename: S C
authors.initials: SC
authors.lastname: Kung