title: Ballistic electron emission microscopy studies of Au/molecule/n-GaAs diodes.
abstract: We present nanometer-scale resolution, ballistic electron emission microscopy (BEEM) studies of Au/octanedithiol/n-GaAs (001) diodes. The presence of the molecule dramatically increases the BEEM threshold voltage and displays an unusual transport signature as compared to reference Au/GaAs diodes. Furthermore, BEEM images indicate laterally inhomogeneous interfacial structure. We present calculations that address the role of the molecular layer at the interface. Our results indicate that spatially resolved measurements add new insight to studies using conventional spatial-averaging techniques.
authors.affiliation: Department of Physics, Simon Fraser University, Burnaby, BC, V5A 1S6, Canada.
authors.forename: Wenjie
authors.initials: W
authors.lastname: Li
authors.forename: Karen L
authors.initials: KL
authors.lastname: Kavanagh
authors.forename: Carolyn M
authors.initials: CM
authors.lastname: Matzke
authors.forename: A Alec
authors.initials: AA
authors.lastname: Talin
authors.forename: François
authors.initials: F
authors.lastname: Léonard
authors.forename: Sergey
authors.initials: S
authors.lastname: Faleev
authors.forename: Julia W P
authors.initials: JW
authors.lastname: Hsu