title: Initial stage of Si(001) surface oxidation from first-principles calculations.
abstract: A comprehensive density-functional theory (DFT) study of the atomic structure, electronic properties, and optical response of the Si(001) surface at the initial stages of oxidation is presented. The most favored adsorption position of a single O atom on top of the (4 x 2)-reconstructed Si(001) surface is found at the back-bond of the "down" Si dimer atom. There is no energy barrier for oxygen insertion into this bond. The ionization energy of the surface reaches a maximum when the oxidation of the second Si monolayer starts. Oxidation leads to an increase of the energy gap between occupied and empty surface states. The calculated reflectance anisotropy spectroscopy (RAS) data in comparison with experiment suggest a considerable amount of surface disorder already after oxidation of the first monolayer.
authors.affiliation: Friedrich-Schiller-Universität Jena, 07743 Jena, Germany. fuchs@ifto.unijena.de
authors.forename: F
authors.initials: F
authors.lastname: Fuchs
authors.forename: W G
authors.initials: WG
authors.lastname: Schmidt
authors.forename: F
authors.initials: F
authors.lastname: Bechstedt