title: Electronic properties of n-type carbon nanotubes prepared by CF4 plasma fluorination and amino functionalization.
abstract: Single-walled carbon nanotubes (SWNTs) have been fluorinated by CF4 plasma exposure and further functionalized with 1,2-diaminoethane. The degree of amino functionalization is dependent on the degree of initial fluorination rather than oxygen or carbon defects. Reaction at both ends of 1,2-diaminoethane was observed to increase with fluorine content. Back-gated SWNT devices have shown p-type semiconducting behavior for CF4-functionalized SWNTs and n-type semiconducting behavior for amino-functionalized SWNTs. The degree of n-type behavior increases with the amount of nitrogen attached to the SWNTs.
authors.affiliation: School of Engineering and Electronics, The Scottish Microelectronics Centre, University of Edinburgh, King's Buildings, West Mains Road, Edinburgh, EH9 3JF, UK.
authors.forename: Natalie O V
authors.initials: NO
authors.lastname: Plank
authors.forename: Gavin A
authors.initials: GA
authors.lastname: Forrest
authors.forename: Rebecca
authors.initials: R
authors.lastname: Cheung
authors.forename: Andrew J
authors.initials: AJ
authors.lastname: Alexander
mesh_terms: D004566:Electrodes; D004583:Electrons; D005029:Ethylenediamines / Q000737:chemistry*; D005466:Fluorocarbons / Q000737:chemistry*; D037742:Nanotubes, Carbon / Q000737:chemistry*; D012666:Semiconductors; D013997:Time Factors
chemical_list: D005029:Ethylenediamines; D005466:Fluorocarbons; D037742:Nanotubes, Carbon; C031234:ethylenediamine; C035066:carbon tetrafluoride