title: Effects of Ag doping on the photoluminescence of ZnO films grown on Si substrates.
abstract: Silver (Ag) doped and undoped ZnO films were grown on Si (100) substrates by the sol-gel process. Photoluminescence (PL) of two kinds of samples as a function of the excitation intensity has been measured, and PL intensities have been fitted by a power law. It is found that Ag doping increases the intensity of free emission from ZnO and does not change the position and the full width at half-maximum of the free exciton emission. In PL spectra of two kinds of samples under various excitation powers, no visible emission bands related to the deep levels were observed. These results reveal that doped Ag in ZnO films only enhances emission efficiency from free exciton recombination, not giving rise to new emissions.
authors.affiliation: Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Zhang
authors.forename: Ziyu
authors.initials: Z
authors.lastname: Zhang
authors.forename: Bixia
authors.initials: B
authors.lastname: Lin
authors.forename: Zhuxi
authors.initials: Z
authors.lastname: Fu
authors.forename: Jin
authors.initials: J
authors.lastname: Xu