title: High performance n- and p-type field-effect transistors based on tetrathiafulvalene derivatives.
abstract: The first n-type FET based on TTF derivatives was prepared. TTF derivatives with halogeno-substituted quinoxaline rings showed excellent n- or p-type performances with high carrier mobilities. Introduction of halogen groups determined the FET polarity by controlling the HOMO and LUMO levels of the molecules. The pi-stacking structures were observed in the single crystals of tetrahalogeno-TTFs.
authors.affiliation: Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
authors.lastname: Naraso
authors.forename: Jun-ichi
authors.initials: J
authors.lastname: Nishida
authors.forename: Daisuke
authors.initials: D
authors.lastname: Kumaki
authors.forename: Shizuo
authors.initials: S
authors.lastname: Tokito
authors.forename: Yoshiro
authors.initials: Y
authors.lastname: Yamashita