title: Excellent field-emission properties of P-doped GaN nanowires.
abstract: GaN nanowires with P doping were synthesized via a simple thermal evaporation process. The P-doped GaN nanowires have average diameters of approximately 100 nm and lengths up to tens of micrometers. Scanning electron microscope and high-resolution field-emission transmission electron microscope analyses revealed that P doping results in a rough surface morphology of GaN nanowires. Field-emission measurements showed that P doping effectively decreases the turn-on field of GaN nanowire to 5.1 V/mum, holding promise of application as an electron emitter. The rough surface is responsible for enhancement of the field-emission properties of GaN nanowires.
authors.affiliation: Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-0005, Japan.
authors.forename: B D
authors.initials: BD
authors.lastname: Liu
authors.forename: Y
authors.initials: Y
authors.lastname: Bando
authors.forename: C C
authors.initials: CC
authors.lastname: Tang
authors.forename: F F
authors.initials: FF
authors.lastname: Xu
authors.forename: D
authors.initials: D
authors.lastname: Golberg