Ballistic electron emission microscopy studies of Au/molecule/n-GaAs diodes.
We present nanometer-scale resolution, ballistic electron emission microscopy (BEEM) studies of Au/octanedithiol/n-GaAs (001) diodes. The presence of the molecule dramatically increases the BEEM threshold voltage and displays an unusual transport signature as compared to reference Au/GaAs diodes. Furthermore, BEEM images indicate laterally inhomogeneous interfacial structure. We present calculations that address the role of the molecular layer at the interface. Our results indicate that spatially resolved measurements add new insight to studies using conventional spatial-averaging techniques.
Li
Wenjie
W
Department of Physics, Simon Fraser University, Burnaby, BC, V5A 1S6, Canada.
Kavanagh
Karen L
KL
Matzke
Carolyn M
CM
Talin
A Alec
AA
Léonard
François
F
Faleev
Sergey
S
Hsu
Julia W P
JW