title: Synthesis and Magnetic Properties of Manganese-Doped GaP Nanowires.
abstract: We characterized the structure and magnetic properties of Mn-incorporated GaP nanowires synthesized by thermal evaporation of GaP/Mn powders. The nanowires consist of twin-crystalline zinc blende GaP grown with the [111] direction and doped with about 1 at. % Mn. They are often sheathed with the bumpy amorphous outerlayers containing high concentrations of Mn and O. The ferromagnetic hysteresis curves at 5 and 300 K and temperature-dependent magnetization provide evidence for the ferromagnetism with the Curie temperature higher than room temperature. Magnetic properties of individual nanowires have been measured, showing a large negative magnetoresistance equal to about -5% at 5 K. We suggest that the Mn doping of GaP nanowires would form a dilute magnetic semiconductor.
authors.affiliation: Department of Chemistry, Korea University, Jochiwon 339-700, Korea.
authors.forename: Doo Suk
authors.initials: DS
authors.lastname: Han
authors.forename: Seung Yong
authors.initials: SY
authors.lastname: Bae
authors.forename: Hee Won
authors.initials: HW
authors.lastname: Seo
authors.forename: Young Joo
authors.initials: YJ
authors.lastname: Kang
authors.forename: Jeunghee
authors.initials: J
authors.lastname: Park
authors.forename: Gangho
authors.initials: G
authors.lastname: Lee
authors.forename: Jae-Pyoung
authors.initials: JP
authors.lastname: Ahn
authors.forename: Soonkyu
authors.initials: S
authors.lastname: Kim
authors.forename: Joonyeon
authors.initials: J
authors.lastname: Chang