title: Mass transport model for semiconductor nanowire growth.
abstract: We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.
authors.affiliation: Solid State Physics and The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-22100 Lund, Sweden. jonas.johansson@ftf.lth.se
authors.forename: Jonas
authors.initials: J
authors.lastname: Johansson
authors.forename: C Patrik T
authors.initials: CP
authors.lastname: Svensson
authors.forename: Thomas
authors.initials: T
authors.lastname: Mårtensson
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson
authors.forename: Werner
authors.initials: W
authors.lastname: Seifert