title: Needlelike bicrystalline GaN nanowires with excellent field emission properties.
abstract: Large-yield and crystalline GaN nanowires have been synthesized on a Si substrate via a simple thermal evaporation process. The majority of the GaN nanowires has bicrystalline structures with a needlelike shape, a triangular prism morphology, and a uniform diameter of approximately 100 nm. Field-emission measurements show that the bicrystalline GaN nanowires with sharp tips have a lower turn-on field of approximately 7.5 V/microm and are good candidates for low-cost and large-area electron emitters. It is believed that the excellent filed emission property is attributed to the bicrystalline structure defects and sharp tips.
authors.affiliation: Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-0005, Japan. Liu.Baodan@nims.go.jp
authors.forename: Baodan
authors.initials: B
authors.lastname: Liu
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
authors.forename: Chengchun
authors.initials: C
authors.lastname: Tang
authors.forename: Fangfang
authors.initials: F
authors.lastname: Xu
authors.forename: Junquing
authors.initials: J
authors.lastname: Hu
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg