High performance n- and p-type field-effect transistors based on tetrathiafulvalene derivatives.
The first n-type FET based on TTF derivatives was prepared. TTF derivatives with halogeno-substituted quinoxaline rings showed excellent n- or p-type performances with high carrier mobilities. Introduction of halogen groups determined the FET polarity by controlling the HOMO and LUMO levels of the molecules. The pi-stacking structures were observed in the single crystals of tetrahalogeno-TTFs.
Naraso
Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
Nishida
Jun-ichi
J
Kumaki
Daisuke
D
Tokito
Shizuo
S
Yamashita
Yoshiro
Y