Tungsten oxide nanowire growth by chemically induced strain.
We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposition (CVD) conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900 degrees C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also to other nanowire systems.
Klinke
Christian
C
IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA. cklinke@us.ibm.com
Hannon
James B
JB
Gignac
Lynne
L
Reuter
Kathleen
K
Avouris
Phaedon
P