title: Single- and double-shelled coaxial nanocables of GaP with silicon oxide and carbon.
abstract: Coaxial nanocables of gallium phosphide (GaP) core with three different-typed single and double shells (i.e., silicon oxide (SiO(x)), carbon (C), and SiO(x)/C) were exclusively synthesized by the chemical vapor deposition method. The GaP/SiO(x)) nanocables were directly grown on gold-deposited silicon substrates. Deposition of C on the GaP nanowires and GaP/SiO(x) nanocables produces the GaP/C and GaP/SiO(x)/C nanocables, respectively. The outer diameter of the nanocables is <50 nm. The thickness and crystallinity of the C outer layers were controllable by the growth conditions. X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence reveal that the outer layer formation reduces the surface defects of GaP nanowires. A great enhancement of the conductivity due to the C outer layers has been measured by the four-probe method. The growth process of these nanocables has been discussed on the basis of the vapor-liquid-solid mechanism.
authors.affiliation: Department of Chemistry, Korea University, Jochiwon 339-700, S. Korea.
authors.forename: Seung Yong
authors.initials: SY
authors.lastname: Bae
authors.forename: Hee Won
authors.initials: HW
authors.lastname: Seo
authors.forename: Hyun Chul
authors.initials: HC
authors.lastname: Choi
authors.forename: Doo Suk
authors.initials: DS
authors.lastname: Han
authors.forename: Jeunghee
authors.initials: J
authors.lastname: Park