Optical and field emission properties of thin single-crystalline GaN nanowires.
Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/microm and the current density was about 0.2 mA/cm(2) at 17.5 V/microm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.
Ha
Byeongchul
B
Department of Nanotechnology, Hanyang University, Seoul 133-791, Korea.
Seo
Sung Ho
SH
Cho
Jung Hee
JH
Yoon
Chong S
CS
Yoo
Jinkyoung
J
Yi
Gyu-Chul
GC
Park
Chong Yun
CY
Lee
Cheol Jin
CJ