title: Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors.
abstract: We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10(15) cm(-2)) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 x 10(6) A/cm(2), and high metallic conductivities, 10(4) S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10(7) A/cm(2). Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is approximately 3.5 cm(2).V(-1).s(-1) at 297 K, comparable with that found in fully crystalline organic devices.
authors.affiliation: Center for Polymers and Organic Solids, University of California, Santa Barbara, CA 93106, USA.
authors.forename: Anoop S
authors.initials: AS
authors.lastname: Dhoot
authors.forename: Jonathan D
authors.initials: JD
authors.lastname: Yuen
authors.forename: Martin
authors.initials: M
authors.lastname: Heeney
authors.forename: Iain
authors.initials: I
authors.lastname: McCulloch
authors.forename: Daniel
authors.initials: D
authors.lastname: Moses
authors.forename: Alan J
authors.initials: AJ
authors.lastname: Heeger
mesh_terms: D004553:Electric Conductivity; D004563:Electrochemistry; D004573:Electrolytes; D008670:Metals; D008956:Models, Chemical; D011108:Polymers / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D004573:Electrolytes; D008670:Metals; D011108:Polymers; D012825:Silicon