Needlelike bicrystalline GaN nanowires with excellent field emission properties.
Large-yield and crystalline GaN nanowires have been synthesized on a Si substrate via a simple thermal evaporation process. The majority of the GaN nanowires has bicrystalline structures with a needlelike shape, a triangular prism morphology, and a uniform diameter of approximately 100 nm. Field-emission measurements show that the bicrystalline GaN nanowires with sharp tips have a lower turn-on field of approximately 7.5 V/microm and are good candidates for low-cost and large-area electron emitters. It is believed that the excellent filed emission property is attributed to the bicrystalline structure defects and sharp tips.
Liu
Baodan
B
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-0005, Japan. Liu.Baodan@nims.go.jp
Bando
Yoshio
Y
Tang
Chengchun
C
Xu
Fangfang
F
Hu
Junquing
J
Golberg
Dmitri
D