Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires.
Quasi one-dimensional GaN-SiO(2) nanostructures, with a silicon oxide layer coated on semiconductor GaN nanowires, were successfully synthesized through as-synthesized SiO(2) nanoparticles-assisted reaction. The experimental results indicate that the nanostructure consists of single-crystalline wurtzite GaN nanowire core, an amorphous SiO(2) outer shell separated in the radial direction. These quasi one-dimensional nanowires have the diameters of a few tens of nanometers and lengths up to several hundreds of micrometers. The photoluminescence spectrum of the GaN-SiO(2) nanostructures consists of one broad blue-light emission peak at 480 nm and another weak UV emission peak at 345 nm. The novel method, which may results in high yield and high reproducibility, is demonstrated to be a unique technique for producing nanostructures with controlled morphology.
Zhang
Jun
J
Department of Physics, Yantai University, Yantai, 264005, Peoples Republic of China. jzhang@ytu.edu.cn
Zhang
Lide
L
Jiang
Feihong
F
Yang
Yongdong
Y
Li
Jianping
J
D005708:Gallium / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission / Q000379:methods; D053770:Nanowires / Q000737:chemistry*; D055095:Optics and Photonics; D010316:Particle Size; D012666:Semiconductors; D012680:Sensitivity and Specificity; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
C473348:gallium nitride; D012822:Silicon Dioxide; D005708:Gallium