Mass transport model for semiconductor nanowire growth.
We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.
Johansson
Jonas
J
Solid State Physics and The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-22100 Lund, Sweden. jonas.johansson@ftf.lth.se
Svensson
C Patrik T
CP
Mårtensson
Thomas
T
Samuelson
Lars
L
Seifert
Werner
W