Controlled one-dimensional nanostructures in poly(3-hexylthiophene) thin film for high-performance organic field-effect transistors.
With the aim of improving the field-effect mobilities in poly(3-hexylthiophene) (P3HT) thin film transistors, we controlled the nanostructures of P3HT thin film by changing the solvent vapor pressure in a spin-coating chamber during solidification. The transistors with P3HT thin films spin-coated under a high solvent vapor pressure (56.5 KPa), showing the one-dimensional nanowire morphologies, resulted in the relatively high field-effect mobilities (0.02 cm2/(V.s)) that are typically more than 1 order of magnitude higher than those prepared under ambient conditions, showing the featureless morphologies. This can be attributed to the higher solvent vapor pressure during film formation, providing the solvent is allowed to evaporate slowly and the degree of ordering within the P3HT crystalline domains is dramatically improved.
Kim
Do Hwan
DH
Department of Chemical Engineering, Polymer Research Institute, Pohang University of Science and Technology, Pohang 790-784, Korea.
Jang
Yunseok
Y
Park
Yeong Don
YD
Cho
Kilwon
K
D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry*; D010316:Particle Size; D013876:Thiophenes / Q000737:chemistry*; D014173:Transistors, Electronic
D008567:Membranes, Artificial; D013876:Thiophenes; C507295:poly(3-hexylthiophene)