Broadband ZnO single-nanowire light-emitting diode.
We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature.
Bao
Jiming
J
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
Zimmler
Mariano A
MA
Capasso
Federico
F
Wang
Xiaowei
X
Ren
Z F
ZF
D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation* / Q000379:methods; D008839:Microelectrodes; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods; D043942:Nanotubes / Q000737:chemistry*; D010777:Photochemistry / Q000295:instrumentation* / Q000379:methods; D012666:Semiconductors; D014159:Transducers; D015034:Zinc Oxide / Q000737:chemistry*
D015034:Zinc Oxide