The controlled growth of GaN nanowires.
This paper reports a scalable process for the growth of high-quality GaN nanowires and uniform nanowire arrays in which the position and diameter of each nanowire is precisely controlled. The approach is based on conventional metalorganic chemical vapor deposition using regular precursors and requires no additional metal catalyst. The location, orientation, and diameter of each GaN nanowire are controlled using a thin, selective growth mask that is patterned by interferometric lithography. It was found that use of a pulsed MOCVD process allowed the nanowire diameter to remain constant after the nanowires had emerged from the selective growth mask. Vertical GaN nanowire growth rates in excess of 2 mum/h were measured, while remarkably the diameter of each nanowire remained constant over the entire (micrometer) length of the nanowires. The paper reports transmission electron microscopy and photoluminescence data.
Hersee
Stephen D
SD
Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106, USA. shersee@chtm.unm.edu
Sun
Xinyu
X
Wang
Xin
X
D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D049449:Luminescence; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000032:analysis / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors
C473348:gallium nitride; D005708:Gallium