Au-free epitaxial growth of InAs nanowires.
III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.
Mandl
Bernhard
B
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
Stangl
Julian
J
Mårtensson
Thomas
T
Mikkelsen
Anders
A
Eriksson
Jessica
J
Karlsson
Lisa S
LS
Bauer
G Uuml Nther
GU
Samuelson
Lars
L
Seifert
Werner
W
D001152:Arsenicals / Q000032:analysis* / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004559:Electric Wiring / Q000295:instrumentation; D006046:Gold / Q000737:chemistry; D007204:Indium / Q000032:analysis* / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size
D001152:Arsenicals; D007204:Indium; D006046:Gold; C076773:indium arsenide