High-repetition rate Q-switched Nd:YVO4 laser with a composite semiconductor absorber.
A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber.
Wang
Yong-Gang
YG
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. chinawygxjw@163.com
Ma
Xiao-Yu
XY
Peng
Ji-Ying
JY
Tan
Hui-Ming
HM
Qian
Long-Sheng
LS