TaSi2 nanowires: A potential field emitter and interconnect.
TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950 degrees C in an ambient containing Ta vapor. The nanowires could be grown up to 13 microm in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/microm and the threshold field is down to 6 V/microm with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties with a remarkable high failure current density of 3 x 10(8) A cm(-2). In addition, effects of annealing temperatures and capability of metal silicide mediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.
Chueh
Yu-Lun
YL
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
Ko
Mong-Tzong
MT
Chou
Li-Jen
LJ
Chen
Lih-Juann
LJ
Wu
Cen-Shawn
CS
Chen
Chii-Dong
CD
D003460:Crystallization / Q000379:methods; D004553:Electric Conductivity; D004559:Electric Wiring; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005240:Feasibility Studies; D008422:Materials Testing; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000032:analysis / Q000737:chemistry*; D013635:Tantalum / Q000032:analysis / Q000737:chemistry*; D013696:Temperature
D013635:Tantalum; D012825:Silicon