Intrinsic distribution of magnetic anisotropy in thin films probed by patterned nanostructures.
We demonstrate that the switching field distribution (SFD) in arrays of 50 nm to 5 microm Co/Pd elements, with perpendicular anisotropy, can be explained by a distribution of intrinsic anisotropy rather than any fabrication related effects. Further, simulations of coercivity and SFD versus element size allow the distribution of intrinsic anisotropy to be quantified in highly exchanged coupled thin films where the reversal mechanism is one of nucleation followed by rapid domain wall motion.
Thomson
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Hitachi Global Storage Technologies, San Jose Research Center, 650 Harry Road, San Jose, California 95120, USA. thomas.thomson@hitachigst.com
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Terris
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