Scaling and universality of roughening in thermal oxidation of Si(001).
By analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 degrees C in an Ar atmosphere containing a small fraction of O2. We also show that there is a phase transition in the universality class from a disordered to step-terrace structure at the interface at oxidation temperatures between 1150 and 1380 degrees C with the miscut angle of the substrate as the scaling parameter.
Omi
Hiroo
H
NTT Basic Research Laboratories, NTT Corporation, 3-1 Wakamiya, Morinosato, Atsugi, Kanagawa 243-0198, Japan. homi@will.brl.ntt.co.jp
Kageshima
Hiroyuki
H
Uematsu
Masashi
M