title: Au-free epitaxial growth of InAs nanowires.
abstract: III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.
authors.affiliation: Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
authors.forename: Bernhard
authors.initials: B
authors.lastname: Mandl
authors.forename: Julian
authors.initials: J
authors.lastname: Stangl
authors.forename: Thomas
authors.initials: T
authors.lastname: Mårtensson
authors.forename: Anders
authors.initials: A
authors.lastname: Mikkelsen
authors.forename: Jessica
authors.initials: J
authors.lastname: Eriksson
authors.forename: Lisa S
authors.initials: LS
authors.lastname: Karlsson
authors.forename: G Uuml Nther
authors.initials: GU
authors.lastname: Bauer
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson
authors.forename: Werner
authors.initials: W
authors.lastname: Seifert
mesh_terms: D001152:Arsenicals / Q000032:analysis* / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004559:Electric Wiring / Q000295:instrumentation; D006046:Gold / Q000737:chemistry; D007204:Indium / Q000032:analysis* / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000032:analysis / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size
chemical_list: D001152:Arsenicals; D007204:Indium; D006046:Gold; C076773:indium arsenide