TEM-nanoindentation studies of semiconducting structures.
This paper reviews the application of nanoindentation coupled with transmission electron microscopy (TEM) to investigations of the plastic behaviour of semiconducting structures and its implication for device design. Instrumented nanoindentation has been developed to extract the mechanical behaviour of small volumes scaled to those encountered in semiconductor heterostructures. We illustrate that TEM is a powerful complementary tool for the study of local plasticity induced by nanoindentation. TEM-nanoindentation allows for detailed understanding of the plastic deformation in semiconducting structures and opens practical routes for improvement of devices. Performances of heterostructures are deteriously affected by dislocations that relax the lattice mismatched layers. Different ways to obtain compliant substructures are being developed in order to concentrate the plastic relaxation underneath the heterostructure. Such approaches allow for mechanical design of micro- and opto-electronic devices to be considered throughout the fabrication process.
Le Bourhis
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Université de Poitiers, Laboratoire de Métallurgie Physique, UMR 6630 CNRS, SP2MI-Téléport 2-Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope-Chasseneuil Cedex, France. eric.le.bourhis@univ-poitiers.fr
Patriarche
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