title: Spin injection and detection in silicon.
abstract: Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is argued that symmetry properties of the charge current can be exploited to detect electrical spin injection in silicon using currently available techniques.
authors.affiliation: Department of Physics, State University of New York at Buffalo, 14260, USA.
authors.forename: Igor
authors.initials: I
authors.lastname: Zutić
authors.forename: Jaroslav
authors.initials: J
authors.lastname: Fabian
authors.forename: Steven C
authors.initials: SC
authors.lastname: Erwin