title: High-repetition rate Q-switched Nd:YVO4 laser with a composite semiconductor absorber.
abstract: A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber.
authors.affiliation: Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. chinawygxjw@163.com
authors.forename: Yong-Gang
authors.initials: YG
authors.lastname: Wang
authors.forename: Xiao-Yu
authors.initials: XY
authors.lastname: Ma
authors.forename: Ji-Ying
authors.initials: JY
authors.lastname: Peng
authors.forename: Hui-Ming
authors.initials: HM
authors.lastname: Tan
authors.forename: Long-Sheng
authors.initials: LS
authors.lastname: Qian