title: Tunable quasi-two-dimensional electron gases in oxide heterostructures.
abstract: We report on a large electric-field response of quasi-two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi-two-dimensional electron gases and therefore present an oxide analog to semiconducting high-electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state.
authors.affiliation: Experimental Physics VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-86135 Augsburg, Germany.
authors.forename: S
authors.initials: S
authors.lastname: Thiel
authors.forename: G
authors.initials: G
authors.lastname: Hammerl
authors.forename: A
authors.initials: A
authors.lastname: Schmehl
authors.forename: C W
authors.initials: CW
authors.lastname: Schneider
authors.forename: J
authors.initials: J
authors.lastname: Mannhart