Manganese-induced growth of GaAs nanowires.
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth catalyst. Transmission electron microscopy shows that the wires have a wurtzite-type lattice and that alpha-Mn particles are found at the free end of the wires. X-ray absorption fine structure measurements reveal the presence of a significant fraction of Mn-As bonds, suggesting Mn diffusion and incorporation during wire growth. Transport measurements indicate that the wires are p-type, as expected from doping of GaAs with Mn.
Martelli
Faustino
F
Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, I-34012 Trieste, Italy. martelli@tasc.infm.it
Rubini
Silvia
S
Piccin
Matteo
M
Bais
Giorgio
G
Jabeen
Fauzia
F
De Franceschi
Silvano
S
Grillo
Vincenzo
V
Carlino
Elvio
E
D'Acapito
Francesco
F
Boscherini
Federico
F
Cabrini
Stefano
S
Lazzarino
Marco
M
Businaro
Luca
L
Romanato
Filippo
F
Franciosi
Alfonso
A
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry*; D008345:Manganese / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
D001152:Arsenicals; C043055:gallium arsenide; D008345:Manganese; D005708:Gallium