Realization of a linear germanium nanowire p-n junction.
Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p-n junction.
Tutuc
Emanuel
E
I.B.M. TJ Watson Research Center, Yorktown Heights, New York 10598, USA.
Appenzeller
Joerg
J
Reuter
Mark C
MC
Guha
Supratik
S
D003460:Crystallization / Q000379:methods*; D017097:Electric Impedance; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008839:Microelectrodes; D008968:Molecular Conformation; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors
D005857:Germanium