Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.
An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10,000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 muA/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm2/Vs.
Lind
Erik
E
Solid State Physics/Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden.
Persson
Ann I
AI
Samuelson
Lars
L
Wernersson
Lars-Erik
LE
D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D008956:Models, Chemical; D008958:Models, Molecular; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry*; D014173:Transistors, Electronic
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