title: Manganese-induced growth of GaAs nanowires.
abstract: GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth catalyst. Transmission electron microscopy shows that the wires have a wurtzite-type lattice and that alpha-Mn particles are found at the free end of the wires. X-ray absorption fine structure measurements reveal the presence of a significant fraction of Mn-As bonds, suggesting Mn diffusion and incorporation during wire growth. Transport measurements indicate that the wires are p-type, as expected from doping of GaAs with Mn.
authors.affiliation: Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, I-34012 Trieste, Italy. martelli@tasc.infm.it
authors.forename: Faustino
authors.initials: F
authors.lastname: Martelli
authors.forename: Silvia
authors.initials: S
authors.lastname: Rubini
authors.forename: Matteo
authors.initials: M
authors.lastname: Piccin
authors.forename: Giorgio
authors.initials: G
authors.lastname: Bais
authors.forename: Fauzia
authors.initials: F
authors.lastname: Jabeen
authors.forename: Silvano
authors.initials: S
authors.lastname: De Franceschi
authors.forename: Vincenzo
authors.initials: V
authors.lastname: Grillo
authors.forename: Elvio
authors.initials: E
authors.lastname: Carlino
authors.forename: Francesco
authors.initials: F
authors.lastname: D'Acapito
authors.forename: Federico
authors.initials: F
authors.lastname: Boscherini
authors.forename: Stefano
authors.initials: S
authors.lastname: Cabrini
authors.forename: Marco
authors.initials: M
authors.lastname: Lazzarino
authors.forename: Luca
authors.initials: L
authors.lastname: Businaro
authors.forename: Filippo
authors.initials: F
authors.lastname: Romanato
authors.forename: Alfonso
authors.initials: A
authors.lastname: Franciosi
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry*; D008345:Manganese / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D008345:Manganese; D005708:Gallium