Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors.
Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.
Chen
Yung-Fu
YF
Department of Physics and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742-4111, USA.
Fuhrer
Michael S
MS
D003198:Computer Simulation; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008839:Microelectrodes; D008956:Models, Chemical; D008958:Models, Molecular; D043942:Nanotubes / Q000737:chemistry*; D013696:Temperature; D014173:Transistors, Electronic