title: Characterization of frequency-tripled nanosecond pulsed Ti:sapphire laser injection seeded by a frequency-scanning cw Ti:sapphire laser by use of optogalvanic spectroscopy of silicon atoms.
abstract: The performance of a narrow-linewidth nanosecond pulsed deep-UV coherent light source consisting of a frequency-tripled nanosecond pulsed Ti:sapphire laser injection seeded by a frequency-scanning cw Ti:sapphire laser has been characterized by using optogalvanic spectroscopy of silicon atoms as a diagnostic. The envelope of the optogalvanic spectrum indicates the pure Doppler broadening of silicon atoms, which was estimated to be as broad as 4 GHz, without the broadening effect from the laser linewidth itself.
authors.affiliation: Graduate School of Engineering, Osaka City University, Osaka-shi, Osaka. Japan.
authors.forename: Yasutomo
authors.initials: Y
authors.lastname: Shiomi
authors.forename: Kuniaki
authors.initials: K
authors.lastname: Kyutoku
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Kumagai
authors.forename: Ataru
authors.initials: A
authors.lastname: Kobayashi