1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage.
Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 x 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).
Wang
Ying
Y
Key Laboratory of Organic Solids, Center for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China.
Wang
Hongmei
H
Liu
Yunqi
Y
Di
Chong-An
CA
Sun
Yanming
Y
Wu
Weiping
W
Yu
Gui
G
Zhang
Deqing
D
Zhu
Daoben
D