title: Intrinsic domain-wall resistance in ferromagnetic semiconductors.
abstract: Transport through zinc blende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the effective hole spin-orbit interaction. The intrinsic resistance is independent of the domain-wall shape and width and survives the adiabatic limit. For typical parameters, the intrinsic domain-wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.
authors.affiliation: Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim, Norway.
authors.forename: Anh Kiet
authors.initials: AK
authors.lastname: Nguyen
authors.forename: R V
authors.initials: RV
authors.lastname: Shchelushkin
authors.forename: Arne
authors.initials: A
authors.lastname: Brataas