[Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy].
In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.
Zhao
Lei
L
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Chen
Yong-Hai
YH
Zuo
Yu-Hua
YH
Wang
Hai-Ning
HN
Shi
Wen-Hua
WH