Intrinsic domain-wall resistance in ferromagnetic semiconductors.
Transport through zinc blende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the effective hole spin-orbit interaction. The intrinsic resistance is independent of the domain-wall shape and width and survives the adiabatic limit. For typical parameters, the intrinsic domain-wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.
Nguyen
Anh Kiet
AK
Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim, Norway.
Shchelushkin
R V
RV
Brataas
Arne
A