E center in silicon has a donor level in the band gap.
It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity--vacancy pair)--one of the most studied defects in semiconductors--has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past.
Larsen
A Nylandsted
AN
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark.
Mesli
A
A
Nielsen
K Bonde
KB
Nielsen
H Kortegaard
HK
Dobaczewski
L
L
Adey
J
J
Jones
R
R
Palmer
D W
DW
Briddon
P R
PR
Oberg
S
S