title: 1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage.
abstract: Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 x 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).
authors.affiliation: Key Laboratory of Organic Solids, Center for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Wang
authors.forename: Hongmei
authors.initials: H
authors.lastname: Wang
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu
authors.forename: Chong-An
authors.initials: CA
authors.lastname: Di
authors.forename: Yanming
authors.initials: Y
authors.lastname: Sun
authors.forename: Weiping
authors.initials: W
authors.lastname: Wu
authors.forename: Gui
authors.initials: G
authors.lastname: Yu
authors.forename: Deqing
authors.initials: D
authors.lastname: Zhang
authors.forename: Daoben
authors.initials: D
authors.lastname: Zhu