Strain-induced self organization of metal-insulator domains in single-crystalline VO2 nanobeams.
We investigated the effect of substrate-induced strain on the metal-insulator transition (MIT) in single-crystalline VO(2) nanobeams. A simple nanobeam-substrate adhesion leads to uniaxial strain along the nanobeam length because of the nanobeam's unique morphology. The strain changes the relative stability of the metal (M) and insulator (I) phases and leads to spontaneous formation of periodic, alternating M-I domain patterns during the MIT. The spatial periodicity of the M-I domains can be modified by changing the nanobeam thickness and the Young's modulus of the substrate.
Wu
Junqiao
J
Department of Chemistry and Chemical Biology and Department of Physics, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, USA.
Gu
Qian
Q
Guiton
Beth S
BS
de Leon
Nathalie P
NP
Ouyang
Lian
L
Park
Hongkun
H
D003460:Crystallization; D004548:Elasticity; D004553:Electric Conductivity; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010087:Oxides / Q000737:chemistry; D013314:Stress, Mechanical; D014159:Transducers; D017968:Vanadium Compounds / Q000737:chemistry*
D010087:Oxides; D017968:Vanadium Compounds