title: High-resolution study of x-ray resonant Raman scattering at the K edge of silicon.
abstract: We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the 1s-3p excitation were derived. The Kramers-Heisenberg formalism was found to reproduce quite well the x-ray RRS spectra, which is of prime importance for applications of the total-reflection x-ray fluorescence technique.
authors.affiliation: Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland.
authors.forename: J
authors.initials: J
authors.lastname: Szlachetko
authors.forename: J-Cl
authors.initials: JC
authors.lastname: Dousse
authors.forename: J
authors.initials: J
authors.lastname: Hoszowska
authors.forename: M
authors.initials: M
authors.lastname: Pajek
authors.forename: R
authors.initials: R
authors.lastname: Barrett
authors.forename: M
authors.initials: M
authors.lastname: Berset
authors.forename: K
authors.initials: K
authors.lastname: Fennane
authors.forename: A
authors.initials: A
authors.lastname: Kubala-Kukus
authors.forename: M
authors.initials: M
authors.lastname: Szlachetko