title: Effect of strain on the carrier mobility in heavily doped p-type Si.
abstract: We present an experiment that gives insight into the origin of the dependence of the hole mobility (mu) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1-2 x 10{20} cm{-3} concentration range. The strain induced by substitutional dopants, detected by high resolution x-ray diffraction, was varied by changing the relative B and Ga concentration. The effect of strain on mobility was disentangled and a linear relationship between 1/mu and the perpendicular strain was found.
authors.affiliation: CNR-MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy. lucia.romano@ct.infn.it
authors.forename: Lucia
authors.initials: L
authors.lastname: Romano
authors.forename: Alberto Maria
authors.initials: AM
authors.lastname: Piro
authors.forename: Maria Grazia
authors.initials: MG
authors.lastname: Grimaldi
authors.forename: Gabriele
authors.initials: G
authors.lastname: Bisognin
authors.forename: Enrico
authors.initials: E
authors.lastname: Napolitani
authors.forename: Davide
authors.initials: D
authors.lastname: De Salvador