Temperature-driven change in the unstable growth mode on patterned GaAs(001).
We observe a dramatic change in the unstable growth mode during GaAs molecular beam epitaxy on patterned GaAs(001) as the temperature is lowered through approximately 540 degrees C, roughly coincident with the preroughening temperature. Observations of the As2 flux dependence, however, rule out thermodynamic preroughening as driving the growth mode change. Similar observations rule out the change in surface reconstruction as the cause. Instead, we find evidence that the change in the unstable growth mode can be explained by a competition between the decreased adatom collection rate on small terraces and a small anisotropic barrier to adatom diffusion downward across step bunches.
Tadayyon-Eslami
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Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA.
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Calhoun
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Phaneuf
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