title: Role of Pr segregation in acceptor-state formation at ZnO grain boundaries.
abstract: The role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to the specific atomic site along the boundaries, it was found not to be the direct cause of nonlinear current-voltage properties. Instead, under appropriate annealing conditions, Pr enhances formations of acceptor-type native defects that are essential for the creation of double Schottky barriers in ZnO.
authors.affiliation: Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Yukio
authors.initials: Y
authors.lastname: Sato
authors.forename: James P
authors.initials: JP
authors.lastname: Buban
authors.forename: Teruyasu
authors.initials: T
authors.lastname: Mizoguchi
authors.forename: Naoya
authors.initials: N
authors.lastname: Shibata
authors.forename: Masatada
authors.initials: M
authors.lastname: Yodogawa
authors.forename: Takahisa
authors.initials: T
authors.lastname: Yamamoto
authors.forename: Yuichi
authors.initials: Y
authors.lastname: Ikuhara