Nonfluorinated volatile copper(I) 1,3-diketiminates as precursors for Cu metal deposition via atomic layer deposition.
Novel nonfluorinated Cu(diketiminate)L complexes with L = neutral olefinic ligand have been prepared as stable, volatile Cu(I) precursors for the deposition of copper films by an atomic layer deposition (ALD) process. Among them, the complexes of 4-a and 5-a are the most volatile and stable at low temperature (55 degrees C). A clean, conformal copper film was deposited at 120 degrees C in an ALD process. These Cu(I) complexes are the first examples of nonfluorinated copper(I) diketiminates that can be readily applied to an industrial microelectronic fabrication process.
Park
Kyung-Ho
KH
Central Research and Development, DuPont Company, Experimental Station, Wilmington, Delaware 19880-0328, USA. kyung-ho.park@usa.dupont.com
Bradley
Alexander Z
AZ
Thompson
Jeffery S
JS
Marshall
Will J
WJ