title: Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state.
abstract: Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which we quantify for this alloy. As the InN fraction increases from 13% to 19%, the strain in AlInN films changes from tensile to compressive with lattice matching predicted to occur at [InN] = 17.1%.
authors.affiliation: Instituto Tecnológico e Nuclear, Estrada Nacional 10, 2686-953 Sacavém, Portugal. lorenz@itn.pt
authors.forename: K
authors.initials: K
authors.lastname: Lorenz
authors.forename: N
authors.initials: N
authors.lastname: Franco
authors.forename: E
authors.initials: E
authors.lastname: Alves
authors.forename: I M
authors.initials: IM
authors.lastname: Watson
authors.forename: R W
authors.initials: RW
authors.lastname: Martin
authors.forename: K P
authors.initials: KP
authors.lastname: O'Donnell