Role of Pr segregation in acceptor-state formation at ZnO grain boundaries.
The role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to the specific atomic site along the boundaries, it was found not to be the direct cause of nonlinear current-voltage properties. Instead, under appropriate annealing conditions, Pr enhances formations of acceptor-type native defects that are essential for the creation of double Schottky barriers in ZnO.
Sato
Yukio
Y
Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
Buban
James P
JP
Mizoguchi
Teruyasu
T
Shibata
Naoya
N
Yodogawa
Masatada
M
Yamamoto
Takahisa
T
Ikuhara
Yuichi
Y