title: [Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy].
abstract: In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Zhao
authors.forename: Yong-Hai
authors.initials: YH
authors.lastname: Chen
authors.forename: Yu-Hua
authors.initials: YH
authors.lastname: Zuo
authors.forename: Hai-Ning
authors.initials: HN
authors.lastname: Wang
authors.forename: Wen-Hua
authors.initials: WH
authors.lastname: Shi