High-resolution study of x-ray resonant Raman scattering at the K edge of silicon.
We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the 1s-3p excitation were derived. The Kramers-Heisenberg formalism was found to reproduce quite well the x-ray RRS spectra, which is of prime importance for applications of the total-reflection x-ray fluorescence technique.
Szlachetko
J
J
Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland.
Dousse
J-Cl
JC
Hoszowska
J
J
Pajek
M
M
Barrett
R
R
Berset
M
M
Fennane
K
K
Kubala-Kukus
A
A
Szlachetko
M
M