Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state.
Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which we quantify for this alloy. As the InN fraction increases from 13% to 19%, the strain in AlInN films changes from tensile to compressive with lattice matching predicted to occur at [InN] = 17.1%.
Lorenz
K
K
Instituto Tecnológico e Nuclear, Estrada Nacional 10, 2686-953 Sacavém, Portugal. lorenz@itn.pt
Franco
N
N
Alves
E
E
Watson
I M
IM
Martin
R W
RW
O'Donnell
K P
KP