Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect.
Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials
Jung
Yeonwoong
Y
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
Lee
Se-Ho
SH
Ko
Dong-Kyun
DK
Agarwal
Ritesh
R