Imaging of high-angle annular dark-field scanning transmission electron microscopy and observations of GaN-based violet laser diodes.
The first part of this paper is devoted to physics, to explain high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and to interpret why HAADF-STEM imaging is incoherent, instructing a strict definition of interference and coherence of electron waves. Next, we present our recent investigations of InGaN/GaN multiple quantum wells and AlGaN/GaN strained-layer superlattice claddings in GaN-based violet laser diodes, which have been performed by HAADF-STEM and high-resolution field-emission gun scanning electron microscopy.
Shiojiri
M
M
Department of Anatomy, Kanazawa Medical University, Ishikawa, Japan. shiojiri@pc4.so-net.ne.jp
Saijo
H
H