Interfacial reactions and silicate formation in highly dispersed Lu2O3-SiO2 system.
Solid state interface reactions in highly dispersed Lu2O3-SiO2 binary oxide system were studied at 600-1100 degrees C with X-ray powder diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Fourier Transform Infrared spectroscopy (FTIR). The results show that at 600-900 degrees C an amorphous, nanometer thick Lu-O-Si layer covering SiO2 particles exists in the system. At higher temperatures the breakage of the layer into amorphous islands occurs and crystalline silicates with various structures are formed. In particular, Lu4[Si3O10][SiO4] silicate, analogue of B-type Dy-Tm disilicates, forms at 1000 degrees C.
Kepiński
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Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wrocław, Poland. L.Kepinski@int.pan.wroc.pl
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Drozd
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