High frequency SAW devices based on third harmonic generation.
We demonstrate the third harmonic generation in a ZnO/Si layered structure to obtain high frequency SAW devices. This configuration eliminates the need of high lithography resolution and allows easy integration of such devices and electronics on the same wafer. A theoretical study was carried out for the determination of the phase velocity and the electromechanical coupling coefficient (K(2)) dispersion curves of the surface acoustic waves. These results are also in agreement with those measured on a SAW filter designed for the third harmonic generation and the operating frequency is up to 2468 MHz.
Le Brizoual
L
L
Laboratoire de Physique des Milieux Ionisés et Applications, CNRS 7040, Faculte des Science et Techniques, Université Henri Poincaré Nancy I, CEDEX, Vandoeuvre Lès Nancy, France. laurent.lebrizoual@lpmi.uhp-nancy.fr <laurent.lebrizoual@lpmi.uhp-nancy.fr>
Elmazria
O
O
Sarry
F
F
El Hakiki
M
M
Talbi
A
A
Alnot
P
P
D000162:Acoustics / Q000295:instrumentation*; D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008956:Models, Chemical; D011846:Radio Waves; D012542:Scattering, Radiation; D014159:Transducers; D015034:Zinc Oxide / Q000737:chemistry*
D015034:Zinc Oxide