title: Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect.
abstract: Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials
authors.affiliation: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
authors.forename: Yeonwoong
authors.initials: Y
authors.lastname: Jung
authors.forename: Se-Ho
authors.initials: SH
authors.lastname: Lee
authors.forename: Dong-Kyun
authors.initials: DK
authors.lastname: Ko
authors.forename: Ritesh
authors.initials: R
authors.lastname: Agarwal