title: Effect of H2 on the electrical transport properties of single Bi2S3 nanowires.
abstract: Field effect transistors have been fabricated using Bi2S3 nanowires. Whether the contact is ohmic or non-ohmic, the current of Bi2S3 nanowires was found to increase remarkably in H2 compared to that in a vacuum. Carrier density and mobility within the nanowires and the contact barriers between the nanowires and the electrodes have been extracted using field effect and two-probe current-voltage curves. It was found that H2 enhances electronic mobility and carrier density within the nanowires dramatically. The effect of H2 on the contact barriers was observed to be negligible compared to the other two effects.
authors.forename: K
authors.initials: K
authors.lastname: Yao
authors.forename: Z Y
authors.initials: ZY
authors.lastname: Zhang
authors.forename: X L
authors.initials: XL
authors.lastname: Liang
authors.forename: Q
authors.initials: Q
authors.lastname: Chen
authors.forename: L-M
authors.initials: LM
authors.lastname: Peng
authors.forename: Y
authors.initials: Y
authors.lastname: Yu