title: Controlled modulation of conductance in silicon devices by molecular monolayers.
abstract: We have controllably modulated the drain current (I(D)) and threshold voltage (V(T)) in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong pi-electron donors to strong pi-electron acceptors, was covalently attached onto the channel region of the transistors. The device conductance was thus systematically tuned in accordance with the electron-donating ability of the grafted molecules, which is attributed to the charge transfer between the device channel and the molecules. This surface grafting protocol might serve as a useful method for controlling electronic characteristics in small silicon devices at future technology nodes.
authors.affiliation: Department of Chemistry, Rice University, Houston, Texas 77005, USA.
authors.forename: Tao
authors.initials: T
authors.lastname: He
authors.forename: Jianli
authors.initials: J
authors.lastname: He
authors.forename: Meng
authors.initials: M
authors.lastname: Lu
authors.forename: Bo
authors.initials: B
authors.lastname: Chen
authors.forename: Harry
authors.initials: H
authors.lastname: Pang
authors.forename: William F
authors.initials: WF
authors.lastname: Reus
authors.forename: Whitney M
authors.initials: WM
authors.lastname: Nolte
authors.forename: David P
authors.initials: DP
authors.lastname: Nackashi
authors.forename: Paul D
authors.initials: PD
authors.lastname: Franzon
authors.forename: James M
authors.initials: JM
authors.lastname: Tour