Selective etching of metallic carbon nanotubes by gas-phase reaction.
Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits.
Zhang
Guangyu
G
Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA.
Qi
Pengfei
P
Wang
Xinran
X
Lu
Yuerui
Y
Li
Xiaolin
X
Tu
Ryan
R
Bangsaruntip
Sarunya
S
Mann
David
D
Zhang
Li
L
Dai
Hongjie
H