title: Coherent electronic fringe structure in incommensurate silver-silicon quantum wells.
abstract: Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron confinement in the film. The fringes correspond to electronic states extending over the silver film as a quantum well and reaching into the silicon substrate as a quantum slope, with the two parts coherently coupled through an incommensurate interface structure.
authors.affiliation: Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, IL 61801-3080, USA.
authors.forename: N J
authors.initials: NJ
authors.lastname: Speer
authors.forename: S-J
authors.initials: SJ
authors.lastname: Tang
authors.forename: T
authors.initials: T
authors.lastname: Miller
authors.forename: T-C
authors.initials: TC
authors.lastname: Chiang