title: Selective etching of metallic carbon nanotubes by gas-phase reaction.
abstract: Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits.
authors.affiliation: Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA.
authors.forename: Guangyu
authors.initials: G
authors.lastname: Zhang
authors.forename: Pengfei
authors.initials: P
authors.lastname: Qi
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang
authors.forename: Yuerui
authors.initials: Y
authors.lastname: Lu
authors.forename: Xiaolin
authors.initials: X
authors.lastname: Li
authors.forename: Ryan
authors.initials: R
authors.lastname: Tu
authors.forename: Sarunya
authors.initials: S
authors.lastname: Bangsaruntip
authors.forename: David
authors.initials: D
authors.lastname: Mann
authors.forename: Li
authors.initials: L
authors.lastname: Zhang
authors.forename: Hongjie
authors.initials: H
authors.lastname: Dai