Room-temperature electroluminescence in the mid-infrared (2-3 microm) from bulk chromium-doped ZnSe.
Electroluminescence associated with impact excitation or ionization of deep Cr(2+) impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 microm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.
Jaeck
Julien
J
ONERA Chemin de la Hunière, Palaiseau, France. julien.jaeck@onera.fr
Haidar
Riad
R
Rosencher
Emmanuel
E
Caes
Marcel
M
Tauvy
Michel
M
Collin
Stéphane
S
Bardou
Natalie
N
Luc Pelouard
Jean
J
Pardo
Fabrice
F
Lemasson
Philippe
P