title: Imaging of localized electronic states at a nonconducting surface by single-electron tunneling force microscopy.
abstract: Localized electronic states near a nonconducting SiO(2) surface are imaged on a approximately 1 nm scale by single-electron tunneling between the states and a scanning probe tip. Each tunneling electron is detected by electrostatic force. The images represent the number of tunneling electrons at each spatial location. The spatial resolution of the single electron tunneling force microscope is determined by quantum mechanical tunneling, providing new atomic-scale access to electronic states in dielectric surfaces and nonconducting nanostructures.
authors.affiliation: Physics Department, University of Utah, 115 S 1400 E RM 201, Salt Lake City, Utah 84112, USA.
authors.forename: Ezra B
authors.initials: EB
authors.lastname: Bussmann
authors.forename: Ning
authors.initials: N
authors.lastname: Zheng
authors.forename: Clayton C
authors.initials: CC
authors.lastname: Williams
mesh_terms: D004581:Electronics; D008567:Membranes, Artificial; D008854:Microscopy, Electron / Q000295:instrumentation / Q000379:methods*; D016252:Microscopy, Scanning Tunneling / Q000295:instrumentation / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D012680:Sensitivity and Specificity; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D008567:Membranes, Artificial; D012822:Silicon Dioxide