title: Buried amorphous-layer impact on dislocation densities in silicon.
abstract: The impact of amorphous layers on dislocation densities in silicon piezo-resistors was investigated by means of transmission electron microscopy and chemical etching. Mechanical bevel polishing at a shallow angle and selective etching were applied to assess the dislocation depth distributions. It was found that, despite the presence of additional defects after recrystallization, the initial presence of a buried amorphous layer reduced, after annealing, the dislocation density in the depletion region of a p-n junction, compared with the case of a shallower, surface amorphous layer.
authors.affiliation: Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland. mwzorek@ite.waw.pl
authors.forename: M
authors.initials: M
authors.lastname: Wzorek
authors.forename: J
authors.initials: J
authors.lastname: Katcki
authors.forename: M
authors.initials: M
authors.lastname: Płuska
authors.forename: J
authors.initials: J
authors.lastname: Ratajczak
authors.forename: B
authors.initials: B
authors.lastname: Jaroszewicz
authors.forename: K
authors.initials: K
authors.lastname: Domański
authors.forename: P
authors.initials: P
authors.lastname: Grabiec