Controlled modulation of conductance in silicon devices by molecular monolayers.
We have controllably modulated the drain current (I(D)) and threshold voltage (V(T)) in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong pi-electron donors to strong pi-electron acceptors, was covalently attached onto the channel region of the transistors. The device conductance was thus systematically tuned in accordance with the electron-donating ability of the grafted molecules, which is attributed to the charge transfer between the device channel and the molecules. This surface grafting protocol might serve as a useful method for controlling electronic characteristics in small silicon devices at future technology nodes.
He
Tao
T
Department of Chemistry, Rice University, Houston, Texas 77005, USA.
He
Jianli
J
Lu
Meng
M
Chen
Bo
B
Pang
Harry
H
Reus
William F
WF
Nolte
Whitney M
WM
Nackashi
David P
DP
Franzon
Paul D
PD
Tour
James M
JM