Density functional study of the interfacial electron transfer pathway for monolayer-adsorbed InN on the TiO(2) anatase (101) surface.
Density functional theory (DFT) in connection with ultrasoft pseudopotential (USP) and generalized gradient spin-polarized approximations (GGSA) is applied to calculate the adsorption energies and structures of monolayer-adsorbed InN on the TiO(2) anatase (101) surface and the corresponding electronic properties, that is, partial density of states (PDOS) for surface and bulk layers of the TiO(2) anatase (101) surface and monolayer-adsorbed InN, to shed light on the possible structural modes for initial photoexcitation within the UV/vis adsorption region followed by fast electron injection through the InN/TiO(2) interface for an InN/TiO(2)-based solar cell design. Our calculated adsorption energies found that the two most probable stable structural modes of monolayer-adsorbed InN on the TiO(2) anatase (101) surface are (1) an end-on structure with an adsorption energy of 2.52 eV through N binding to surface 2-fold coordinated O (O(cn2)), that is, InN-O(cn2), and (2) a side-on structure with an adsorption energy of 3.05 eV through both N binding to surface 5-fold coordinated Ti (Ti(cn5)) and In bridging two surface O(cn2), that is, (O(cn2))(2)-InN-Ti(cn5). Our calculated band gaps for both InN-O(cn2) and (O(cn2))2-InN-Ti(cn5) (including a 1.0-eV correction using a scissor operator) of monolayer-adsorbed InN on the TiO(2) anatase (101) surface are red-shifted to 1.7 eV (730 nm) and 2.3 eV (540 nm), respectively, which are within the UV/vis adsorption region similar to Gratzel's black dye solar cell. Our analyses of calculated PDOS for both surface and bulk layers of the TiO(2) anatase (101) surface and monolayer-adsorbed InN on the TiO(2) anatase (101) surface suggest that the (O(cn2))(2)-InN-Ti(n5) configuration of monolayer-adsorbed InN on the TiO(2) anatase (101) surface would provide a more feasible structural mode for the electron injection through the InN/TiO(2) interface. This is due to the presence of both occupied and unoccupied electronic states for monolayer-adsorbed InN within the band gap TiO(2) anatase (101) surface, which will allow the photoexcitation within the UV/vis adsorption region to take place effectively, and subsequently the photoexcited electronic states will overlap with the unoccupied electronic states around the lowest conduction band of the TiO(2) anatase (101) surface, which will ensure the electron injection through the InN/TiO(2) interface. Finally, another thing worth our attention is our preliminary study of double-layer-adsorbed InN on the TiO(2) anatase (101) surface, that is, (O(cn2))(2)-(InN)(2)-Ti(cn5), with a calculated band gap red-shifted to 2.6 eV (477 nm) and a different overlap of electronic states between double-layer-adsorbed InN and the TiO(2) anatase (101) surface qualitatively indicated that there is an effect of the thickness of adsorbed InN on the TiO(2) anatase (101) surface on both photoexcitation and electron injection processes involved in the photoinduced interfacial electron transfer through InN/TiO(2). A more thorough and comprehensive study of different layers of InN adsorbed in all possible different orientations on the TiO(2) anatase (101) surface is presently in progress.
Lin
Jyh Shing
JS
Department of Chemistry, Tamkang University, Tamsui, Taiwan. 892170027@s92.tku.edu.tw
Chou
Wen-Chi
WC
Lu
Shao-Yu
SY
Jang
Geng-Jya
GJ
Tseng
Bo-Rong
BR
Li
Yung-Ting
YT