Synthesis, characterization, and growth rates of aluminum- and Ge,Al-substituted silicalite-1 materials grown from clear solutions.
The synthesis, characterization, and growth rates of aluminum- and germanium,aluminum-substituted silicalite-1 (Al-silicalite-1, Ge,Al-silicalite-1) materials grown from clear solutions are reported. In the case of aluminum substitution, the crystallinity of the materials as determined by powder X-ray diffraction (PXRD) decreases with increasing aluminum content, as does the micropore volume determined by nitrogen adsorption and the growth rate determined by in situ small-angle X-ray scattering (SAXS). The final materials possess slightly lower Si/Al ratios than the initial synthesis mixtures based on X-ray fluorescence analysis. In the case of simultaneous incorporation of germanium and aluminum, the final materials have a slightly lower Si/Al ratio than the synthesis mixture but a much higher Si/Ge ratio, indicating the aluminum is more readily incorporated in the zeolite as compared to germanium. This result is consistent with studies of individual heteroatom substitution behavior. Germanium incorporation in the final material increases at higher heteroatom contents (Si/(Ge+Al) = 50 and 25). The promoting effect of germanium on the growth rate of silicalite-1 dominates at low heteroatom content (Si/(Ge+Al) = 100), leading to enhanced zeolite growth rates as compared to pure silicalite-1. This promoting effect is insensitive to the Ge/Al ratio at a Si/(Ge+Al) = 100. The influence of aluminum on the growth rate, as well as the crystallinity of final materials, becomes observable when the heteroatom content is increased (Si/(Ge+Al) = 50 and 25). This is the first study we are aware of that reports the synthesis of Ge,Al-substituted silicalite-1 phases formed in hydroxide media or from clear solutions and has implications for the synthesis of nanoparticulate zeolitic materials for catalysis.
Cheng
Chil-Hung
CH
Department of Chemical Engineering, Texas A&M University, College Station Texas 77843-3122, USA.
Juttu
Gopalakrishnan
G
Mitchell
Scott F
SF
Shantz
Daniel F
DF