Metal filament growth in electrically conductive polymers for nonvolatile memory application.
Solution processable polymers that can reproducibly form metal filament by applying voltage are investigated for nonvolatile memory application. Up to present, the understanding of materials enabling to make the metal filament has not been well-documented and the vacuum deposition methods were dominantly used in device fabrication. After screening various polymers, we found that only the polymers having two functionalities, the presence of strongly coordinating heteroatom (S or N) with metal ions and the electrical conductivity, showed the reproducible filament formation behavior. Among the polymers screened, the regiorandom poly(3-hexylthiophene) showed the best switching endurance over 30,000 write-read-erase-read cycles without any switching failure.
Joo
Won-Jae
WJ
Materials Center, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, Korea. wj.joo@samsung.com
Choi
Tae-Lim
TL
Lee
Jaeho
J
Lee
Sang Kyun
SK
Jung
Myung-Sup
MS
Kim
Nakjoong
N
Kim
Jong Min
JM