title: Single-ion dosemeter based on floating gate memories.
abstract: Floating Gate (FG) nonvolatile memories are based on a tiny polysilicon layer (the FG) which can be permanently charged with electrons or holes, thus changing the threshold voltage of a MOSFET. Every time a FG is hit by a high energy ion, it experiences a charge loss, depending on the ion linear energy transfer (LET) and on the transistor geometrical and electrical characteristics. This paper discusses the opportunities to use this devices as single an ion dosemeter with sub-micrometer spatial resolution and capable of distinguish the impinging ion LET.
authors.affiliation: Department of Information Engineering, Padova University, Padova, Italy. giorgio.cellere@ieee.org
authors.forename: G
authors.initials: G
authors.lastname: Cellere
authors.forename: A
authors.initials: A
authors.lastname: Paccagnella
authors.forename: A
authors.initials: A
authors.lastname: Visconti
authors.forename: M
authors.initials: M
authors.lastname: Bonanomi
authors.forename: P J
authors.initials: PJ
authors.lastname: McNulty
mesh_terms: D016248:Computer Storage Devices; D004307:Dose-Response Relationship, Radiation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007477:Ions; D008832:Microchemistry / Q000295:instrumentation* / Q000379:methods; D008904:Miniaturization; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D011829:Radiation Dosage; D011874:Radiometry / Q000295:instrumentation* / Q000379:methods; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
chemical_list: D007477:Ions