title: Metal filament growth in electrically conductive polymers for nonvolatile memory application.
abstract: Solution processable polymers that can reproducibly form metal filament by applying voltage are investigated for nonvolatile memory application. Up to present, the understanding of materials enabling to make the metal filament has not been well-documented and the vacuum deposition methods were dominantly used in device fabrication. After screening various polymers, we found that only the polymers having two functionalities, the presence of strongly coordinating heteroatom (S or N) with metal ions and the electrical conductivity, showed the reproducible filament formation behavior. Among the polymers screened, the regiorandom poly(3-hexylthiophene) showed the best switching endurance over 30,000 write-read-erase-read cycles without any switching failure.
authors.affiliation: Materials Center, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, Korea. wj.joo@samsung.com
authors.forename: Won-Jae
authors.initials: WJ
authors.lastname: Joo
authors.forename: Tae-Lim
authors.initials: TL
authors.lastname: Choi
authors.forename: Jaeho
authors.initials: J
authors.lastname: Lee
authors.forename: Sang Kyun
authors.initials: SK
authors.lastname: Lee
authors.forename: Myung-Sup
authors.initials: MS
authors.lastname: Jung
authors.forename: Nakjoong
authors.initials: N
authors.lastname: Kim
authors.forename: Jong Min
authors.initials: JM
authors.lastname: Kim