title: Enhancing near-infrared avalanche photodiode performance by femtosecond laser microstructuring.
abstract: A processing technique using femtosecond laser pulses to microstructure the surface of a silicon avalanche photodiode (APD) has been used to enhance its near-infrared (near-IR) response. Experiments were performed on a series of APDs and APD arrays using various structuring parameters and poststructuring annealing sequences. Following thermal annealing, we were able to fabricate APD arrays with quantum efficiencies as high as 58% at 1064 nm without degradation of their noise or gain performance. Experimental results provided evidence to suggest that the improvement in charge collection is a result of increased absorption in the near-IR.
authors.affiliation: Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, Massachusetts 02472-4699, USA. rmyers@rmdinc.com
authors.forename: Richard A
authors.initials: RA
authors.lastname: Myers
authors.forename: Richard
authors.initials: R
authors.lastname: Farrell
authors.forename: Arieh M
authors.initials: AM
authors.lastname: Karger
authors.forename: James E
authors.initials: JE
authors.lastname: Carey
authors.forename: Eric
authors.initials: E
authors.lastname: Mazur