Gain measurements of Fabry-Perot InP/InGaAsP lasers using an ultrahigh-resolution spectrometer.
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum analyzer are presented for what is believed to be the first time. The high resolution allows for accurate gain measurements close to the lasing threshold. This is demonstrated by gain measurements on a bulk InGaAsP 1.5 microm Fabry-Perot laser. Combined with direct measurement of transparency carrier density values, parameters were determined for characterizing the gain at a range of wavelengths and temperatures. The necessity of the use of a logarithmic gain model is shown.
Barbarin
Y
Y
Institute of Communications Technology: Basic Research and Applications, Eindhoven University of Technology, Den Dolech 2, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands. y.barbarin@tue.nl
Bente
E A J M
EA
Servanton
G
G
Mussard
L
L
Oei
Y S
YS
Nötzel
R
R
Smit
M K
MK